TDT72SD Search Results

1h44s

Abstract: Toshiba 1J 9-A vdr 1016
Contextual Info: 9097250 TOSHIBA DISCRETE/OPTO 0 ~T-3lS-/3 39C 02381 SSR (NON-ZERO-CROSS TYPE) TOSHIBA iDISCRETE/OPTO} 600V TSZ1J44S 3e] TDT72SD □0D53Û1 1 |~~ Unit 1A MAXIMUM RATINGS C H A R A C TE R ISTIC T SZ 1D 44S Repetitive Peak T SZ 1G 44S Off-state Voltage T SZ 1H 44S

2SC2483

Abstract: 2SA1195
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Sh ¿6C <DIS CR ET E/ OP T O 2SC2483 D E ^ TQT7ESD 0D07S41 □ 07 5^ L D yr. S IL IC O N NPN E P IT A X IA L TYPE PCT PROCESS) Unit in mm HIGH VOLTAGE GENERAL AMPLIFIER APPLICATIONS. 9.9MAX. . gfg.gfeqg COLOR TV CLASS B SOUND OUTPUT APPLICATIONS.

2SC2483

Abstract: 2SA1195 Scans-00125934
Contextual Info: TOSHIBA {DISCRETE/OPTO} 909 7250 T OSH IB A Sh ¿6C <D I S C R E T E / O P T O 2SC2483 D E ^ TQT7ESD 0D07S41 □ D yr. 07 5 ^ L SILICON NPN EPITAXIAL TYPE PCT PROCESS) HIGH VOLTAGE GENERAL AMPLIFIER APPLICATIONS. 9.9MAX. . gf g. g fe qg Unit in mm COLOR TV CLASS B SOUND OUTPUT APPLICATIONS.

Contextual Info: TIM1414-10L FEATURES : • LOW INTERMODULATION DISTORTION ■ HIGH GAIN IM 3 = - 4 5 dB c at Po = 29.0 dBm , G1dB = 5.0 d B at 14.0 GHz to 14.5 GHz S ingle Carrier Level ■ ■ BROAD BAND INTERNALLY MATCHED HIGH POWER ■ HERMETICALLY SEALED PACKAGE P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET J S 8 8 5 6 -A S Power GaAs FETs Chip Form Features • High power - P 1dB = 3 3 .5 dBm at f = 14.5 G H z • High gain - G idB = 6 .5 dB at f = 14.5 G H z • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-4 Internally Matched Power GaAs FETs C-Band Features • High power - PidB = 36.0 dBm at 5.9 GHz to 6.4 GHz • High gain - G-i ^ b = 8.5 dB at 5.9 GHz to 6.4 GHz • Broad band internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM 7785-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 28.5 dBm, - Single carrier level • H i g h power - P-|dB = 38.5 dBm at 7.7 G H z to 8.5 GHz

2SC2650

Abstract: QD07S go z60
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA "Sh DISCRETE/OPTO 2SC2650 DE | t d eJ7SS0 QD07SÖ1 56C 07581 DT'-JJV? SILICON NPN TRIPLE DIFFUSED TYPE 34.3M AX. 5.3MAX 31 JO SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS.

Contextual Info: TOSHIBA { D I S C R E T E / OPTO} 9097250 TO S H IB A T=j D IS C R E T E /O P T O 99D DE | ^ 7 5 5 0 17352 0D173SS D T -4 I-5 3 TPS703A SILICON PIN PHOTO DIODE Unit in nrn 7.0± a z 1 High Speed Switching :tr,t£=100ns(Typ.) High Sensitivity :Isc=0-9M(Typ.)

329J

Abstract: 1336J TL 494 CL TCD5241BD TC6132AF sp-200 TCD5241 TL+494+CL
Contextual Info: TC6132AF GENERAL The CMOS LSI of TC6132AF was developed to drive the CCD area image sensor TCD5241BD, TCD5251BD, TCD5240D and TCD5250D. The TC6132AF can be combined with a vertical clock driver and synchronous signal generation ICs to constitute the CCD area image sensor driving circuit.