2MX64 Search Results

Contextual Info: IBM13T2649JC 2M x 64 S D R A M SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-Iine Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: 10 CAS Latency J Units j 3 jfcK I Clock Frequency j 100 j MHz ! jtcK

Contextual Info: IBM13T2649NC 2M x 64 SDRAM SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-Iine Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: 10 CAS Latency § Units 3 jfcK I Clock Frequency I 100 j MHz jtcK j Clock Cycle

Contextual Info: IBM11M2645H 2M x 64 DRAM MODULE Features System Performance Benefits: • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 2Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 -Buffered inputs except RAS, Data -Reduced noise (32 Vss/Vcc pins)

Contextual Info: IB M 1 3 T 1 6 4 9 N C Preliminary 1M x 64 1 Bank SDRAM SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: I 10 CAS Latency 3 ! 12 j Units ! 3 jfcK I Clock Frequency

Contextual Info: I = = = = ¥ = = = ’ = IB M 1 1 N 2 6 4 5 H IB M 1 1 N 2 7 3 5 H 2M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 2Mx64, 2Mx72 Extended Data Out Page Mode DIMMs applications • System Performance Benefits:

642006EGM1G09TD

Abstract: DIMM 1998
Contextual Info: 2M x 64 Bit 3.3V UNBUFFERED EDO DIMM Extended Data Out EDO DRAM DIMM 642006EGM1G09TD 168 Pin 2Mx64 EDO DIMM Unbuffered, 1k Refresh, 3.3V with SPD Pin Assignment Pin# General Description The module is a 2Mx64 bit, 9 chip, 3.3V, 168 Pin DIMM module consisting of (8) 1Mx16 (TSOP) DRAM

Contextual Info: WPF286421-70B1SX WHITE /MICROELECTRONICS a 16MByte 2Mx64 FLASH DIMM MODULE ADVANCED* FEATURES • A ccess Tim es of 7 0 , 100ns ■ Packaging: ■ O rganized as 2M x64, User C o n fig ura ble as 2 banks of ■ C om m ercial T e m pe ratu re Range ■ Low Pow er CMOS

Contextual Info: IBM11 M2640H IBM11 M2640HB 2M x 64 DRAM MODULE Features • Optimized for byte-write non-parity applications • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: • 2Mx64 Fast Page Mode DIMM • Performance: ; tRAC

Contextual Info: WEDPF2M64-XBX3 HI-RELIABILITY PRODUCT 2Mx64 3.3V Simultaneous Operation Multi-Chip Package FEATURES • Access Times of 100, 120, 150ns ■ Unlock Bypass Program command • Reduces overall programming time when issuing multiple program command sequences ■ Packaging

Contextual Info: DRAM MODULE KMM366F224CJ1 KMM366F224CJ1 EDO Mode without buffer 2M x 64 DRAM DIMM using 1Mx16, Dual Bank, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F224CJ1 is a 2Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F224CJ1 consists of eight CMOS 1Mx16bits DRAMs in SOJ 400mil

hym7v64200

Contextual Info: HYM7V64200B F-Series Unbuffered 2Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64200B is high speed 3.3Volt synchronous dynamic RAM module consisting of eight 2Mx8 bit Synchronous DRAMs in TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy circuit

Contextual Info: KMM364Ë224AJ DRAM MODULE KMM364E224AJ Fast Page with EDO Mode 2Mx64 DRAM DIMM based on 1M x 1 6 ,1 K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364F224AJ is a 2M bit X 64 Dynamic RAM high density memory module. The Samsung KMM364E224AJ consists of eight CMOS

Contextual Info: DRAM MODULE KMM364E213BK/BS KMM364E213BK/BS Fast Page with EDO Mode 2Mx64 DRAM DIMM based on 2Mx8, 2K Refresh, 5V G ENERAL DESCRIPTION FEATURES The Samsung KMM364E213B is a 2M bit x 64 Dynamic RAM high density memory module. The • Part Identification Samsung KMM364E213B consists of eight CMOS

W72M64V-XBX

Contextual Info: W72M64V-XBX 2Mx64 3.3V Simultaneous Operation Flash Multi-Chip Package *Preliminary FEATURES ! Access Times of 100, 120, 150ns ! Unlock Bypass Program command ! Packaging • Reduces overall programming time when issuing multiple program command sequences

kmm366s203b

Abstract: KMM366S203BTN-G0 KMM366S203BTN-G2 ram kmm366s203btn-g2
Contextual Info: KMM366S203BTN NEW JEDEC SDRAM MODULE KMM366S203BTN SDRAM DIMM 2Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S203BTN is a 2M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

KMM466S203BT-F0

Abstract: KMM466S203BT-F2
Contextual Info: KMM466S203BT NEW JEDEC SDRAM MODULE KMM466S203BT S D R A M SODIMM 2Mx64 SDRAM SODIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S203BT is a 2M bitx 64 Synchronous Dynamic RAM high density memory module. The Samsung

CQ58

Contextual Info: - » Y U H D f l l —• HYM7V64200B Z-SERIES SO DIMM 2MX64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64200B is high speed 3.3Volt synchronous dynamic RAM module consisting of eight 2Mx8 bit Synchronous DRAMs in 44-pin SOJ or TSOPli and 8-pin TSSO P 2K bit EEPROM on a 144-pin glassepoxy circuit board. Two 0.22|iF and 0.0022|_iF decoupling capacitors are mounted for each SDRAM.

ltzg

Contextual Info: “ H Y U N D A I • HYM7V65200C Z-SERIES SO-DIMM 2Mx64 bit SDRAM MODULE based on 2Ux8 SDRAM, LVTTL, 4K-Re1resh DESCRIPTION The HYM7V64200C is high speed 3.3Voit CMOS Synchronous DRAM module consisting of eight 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy

bsc 60h

Contextual Info: White Electronic Designs W72M64V-XBX 2Mx64 3.3V Simultaneous Operation Flash Multi-Chip Package *Advanced FEATURES • Access Times of 100, 120, 150ns ■ Unlock Bypass Program command ■ Packaging • • 159 PBGA, 13x22mm - 1.27mm pitch Reduces overall programming time when issuing

km48c2104bk

Abstract: KM48C2104 KMM364E213BK
Contextual Info: DRAM MODULE KMM364E213BK/BS KMM364E213BK/BS Fast Page with EDO Mode 2M x 64 DRAM DIMM using 2Mx8, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364E213B is a 2Mx64bits Dynamic RAM high density memory module. The Samsung KMM364E213B consists of eight CMOS 2Mx8bits DRAMs in SOJ/TSOP-II

HY5117804B

Abstract: HY5117804 HYM564214AHG HYM564214ATHG
Contextual Info: HYM564214A H-Series Buffered 2Mx64 bit CMOS DRAM MODULE based on 2Mx8 DRAM, EDO, 2K-Refresh GENERAL DESCRIPTION The HYM564214A H-Series is a 2Mx64-bit Extended Data Out mode CMOS DRAM module consisting of eight HY5117804B in 28 pin SOJ or TSOPII and two 16-bit BiCMOS line driver in TSSOP on a 168 pin

Contextual Info: IBM13N2649JC IBM13N2739JC Preliminary 2M X 64/72 1 Bank Unbuffered SDRAM Module Features • 168 Pin emerging JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 2Mx64/72 Synchronous DRAM DIMM • Performance: CAS Latency jfcK I Clock Frequency

Contextual Info: IBM13T2649JC 2M x 64 1 Bank S D R A M SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: CAS Latency • • • • • • jfcK I Clock Frequency jtcK

Contextual Info: KMM466F203BS-L KMM466F213BS-L DRAM MODULE KMM466F203BS-L & KMM466F213BS-L EDO Mode without buffer 2Mx64 based on 2Mx8, 2K & 4K Refresh, 3.3V, Low Power/Self-Refresh G ENER AL DESCRIPTION FEATURES The Samsung KMM466F20 1 3BS-L is a 2M bit x 64 Dynamic RAM high density memory module. The