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    TRANSISTOR S28 Search Results

    TRANSISTOR S28 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    ICL7667MJA
    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    54F151/BEA
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy

    TRANSISTOR S28 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    an-784ala 4440 amplifier circuit diagram 300 wattla 4440 amplifier circuit diagram 300 wattdiode lt 7229+72sd323ym 7137 3dda 3807 pdf transistorinverter welder 4 schematic2n5630thyristor br 4031n3492 PDF

    Contextual Info: m W EREX KS221K10 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SiflQlB DdrlíngtOD Transistor Module 100 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power


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    ks221k10amperes/1000 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711 PDF

    D1181

    Abstract: KS221K10 S-25 C1339 ks22 powerex ks22
    Contextual Info: V O M E R E * KS221K10 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 100 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power


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    ks221k10_amperes/1000d1181ks221k10+4s-25c1339ks22powerex ks22 PDF

    MJE2160

    Abstract: MJE1090 power transistor audio amplifier 500 watts MJE2090 MJE210 MJE2093 MJE2103
    Contextual Info: MJE2090 H, MJE2093 SILICON For Specifications, See MJE1090 Data. MJE2100 th r u MJE2103 (SILICON) For Specifications, See MJE 1090 Data. MJE2160 (silicon) PLASTIC MEDIUM-POWER NPN SILICON TRANSISTOR 1.5 AMPERE POWER TRANSISTOR NPN SILICON . . . designed for line operated audio output amplifier applications


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    mje2090mje2093mje1090mie2100+5mje2103mje2160seean-415power transistor audio amplifier 500 wattsmje210 PDF

    choke vk200

    Abstract: VK200 ferrite mrf5174 VK200 r.f choke VK200 ferrite choke Allen Bradley 706 vk200 ferrite bead type 2951 eb 1361 VK200/20-4B
    Contextual Info: MRF5174 silicon Tlie RF Line 2 W — 400 M Hz R F POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband iarge-signal driver and predriver amplifier stages in the 200*600 M H z frequency range. • Specified 28*Volt, 400 -M H z Characteristics Output Power - 2.0 Watts


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    mrf517428-volt400-mhzchoke vk200+8vk200 ferritevk200 r.f chokevk200 ferrite chokeallen bradley 706vk200 ferrite beadtype 2951eb 1361vk200/20-4b PDF

    BLX14

    Abstract: philips Fxc 3 b philips blx14 transistor EP 430 toroid LA Toroid International AB ES28 transistor application VCE28 neutralization push-pull
    Contextual Info: m b5E D 711DöSb DQb3H50 430 • PHIN BLX14 PHILIPS INTERNATIONAL J V . H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, A B and B operated transmitting equipment in the h.f. and v.h.f. band. • rated for 50 W P.E.P. at 1,6 M H z to 28 M H z


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    blx14philips fxc 3 bphilips blx14transistor ep 430+6toroid latoroid international abes28transistor applicationvce28neutralization push-pull PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


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    o-126t0-220abo-2202sc4544+132sc44482sc36122bc4201transistor 2sa 2sb 2sc 2sds-au27ms2000a inverterp4005s-av21hs-au273182n2sb 834 transistortransistor 2sc4288adrive ic 2sc3346 PDF

    Q62702-S654

    Abstract: E6327 Q67000-S284 k 1094 transistor
    Contextual Info: SIPMOS Small-Signal Transistor BSP 125 ● VDS 600 V ● ID 0.12 A ● RDS on 45 Ω ● N channel ● Enhancement mode Type Ordering Code Tape and Reel Information Pin Configuration Marking BSP 125 Q62702-S654 E6327: 1000 pcs/reel BSP 125 Q67000-S284


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    q62702-s654e6327q67000-s284ot-223+2e6433k 1094 transistor PDF

    transistor smd AsG

    Abstract: BSS88 M7 SMD DIODE MARKING
    Contextual Info: BSS88 In fin e o n technologias SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level •^GS m = 0-8.2.0V Type Vbs BSS88 240 V Type BSS88 BSS88 BSS88 Ordering Code Q62702-S287 Q62702-S303 Q62702-S576 0.25 A B DS(on) Package


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    bss88q62702-s287q62702-s303q62702-s576+4e6288e6296transistor smd asgm7 smd diode marking PDF

    marking FJs

    Abstract: BSS88
    Contextual Info: SIEMENS BSS 88 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type BSS 88 ^DS 240 V Type BSS 88 BSS 88 BSS 88 Ordering Code Q62702-S287 Q62702-S303 Q62702-S576 h 0.25 A ffDS(on) 8& Package Marking


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    q62702-s287q62702-s303q62702-s576e6296+3e6325bss88marking fjs PDF

    Q62702-S654

    Contextual Info: SIEMENS BSP 125 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • V GS th = 1 . 5 . . . 2 . 5 V Type Vos h BSP 125 600 V 0.12 A Type BSP 125 BSP 125 Ordering Code Q62702-S654 Q67000-S284 ffDS(on) 45 Q Package Marking SOT-223 BSP 125


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    ot-223q62702-s654q67000-s284e6327+1e6433 PDF

    GFE 88 DIODE

    Contextual Info: SIEMENS BSS 88 SIPMOS Small-Signal Transistor • N channel • Enhancement mode 1 , • Logic Level 1 ' ^GS th = 0.8.2.0V ¿ 3 ^ VPT05I58 Pin 1 Type BSS 88 VDS 240 V b 0.25 A Type BSS 88 BSS 88 BSS 88 BSS 88 Ordering Code Q62702-S454 Q62702-S287 Q62702-SS03


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    t05i58q62702-s454q62702-s287q62702-ss03+6q62702-s576e6288e6296e6325sem80gfe 88 diode PDF

    Contextual Info: SIEMENS BSP 125 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1-5 -2.5 V Type BSP 125 ^DS 600 V hi 0.12 A Type BSP 125 BSP 125 Ordering Code Q62702-S654 Q67000-S284 ffDS(on) Package Marking 45 £2 SOT-223 BSP 125 Tape and Reel Information


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    q62702-s654q67000-s284ot-223e6327+3e6433e35bq5fl23sh05 PDF

    SS88

    Abstract: s576 s287 Q62702-S287 Q62702-S303 Q62702-S576
    Contextual Info: BSS 88 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Marking BSS 88 240 V 0.25 A 8Ω TO-92 SS88 Type BSS 88 BSS 88 BSS 88 Ordering Code Q62702-S287


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    q62702-s287q62702-s303q62702-s576e6288+5e6296e6325ss88s576s287 PDF

    F818

    Abstract: K 1357 S201 S501 t-900MHz c2356
    Contextual Info: MRF818 SILICON T h e R F L in e 8.0 W - 9 0 0 MHz R F POWER TRANSISTOR NPN S ILIC O N NPN SILICON RF POWER TRANSISTOR . . . designed fo r 1 3 .6 V o lt U H F large-signal a m p lifie r a p p lic a tio n s in in d u s trial and c o m m erc ia l • FM e q u ip m e n t o p e ra tin g t o 9 6 0 M H z .


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    t590-65-4at-900mhzf818k 1357+3s201s501c2356 PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    cb-f36c2sd16422sd21822sc4489+11-08s-ksd 302 250v, 10airf 5630transistor 2sb 367irf 3055ac153ytransistor esm 2878tip 43c transistor2sk116bf199bd643 PDF

    78M05CDB

    Abstract: 78M05 ST transistor 78M12C S500mA 78M08C ST 78m05 78M12C 78M05DB S200M 78M08CU
    Contextual Info: FEATURES ABSOLUTE MAXIMUM RATINGS • OUTPUT CURRENT UP TO 500MA • NO EXTERNAL COMPONENTS • INTERNAL THERMAL OVERLOAD PRO­ TECTION • INTERNAL SHORT CIRCUIT CURRENT LIMITING • OUTPUT TRANSISTOR SAFE-AREA COMPENSATION • AVAILABLE IN THE TO-220 AND THE


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    500mao-22078m0078m00c+12t0-220miai0678m05cdb78m05 sttransistor 78m12cs500ma78m08cst 78m0578m12c78m05dbs200m78m08cu PDF

    uPC2581

    Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
    Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8


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    pd7500x10679ejav0sg00mf-11341995p+10upc2581upc20022sd1557upa67cupb582upc1237upc3172p4m pin diagram2sc4328upc157 PDF

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


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    fjj141/a2305dfjj181/a2305e/848+16fjj191/afjl101/acd2306dfjy101/a2306e/832cd2307/9443te4452n3303ecc88taa*310b9d transistorbyy32gex36/7ferranti zs706ej73n159 PDF

    sc5 s dc 6v relay

    Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
    Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997


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    corpora1-504-2860x10679ejev0sg00sc5 s dc 6v relayp48d-70-600+8upd66010upd7752ac03eupd7520upa1601upd70208hupd72020upd16503 PDF

    IR s27

    Abstract: infrared led receiver s28 transistor s46 IR s28 transistor s19 infrared remote switch infrared led receiver transistor s49 TRANSISTOR S28 s16 transistor
    Contextual Info: Infrared Remote Controller HT48RA0-5 Integrated Oscillator and NMOS Driver Characteristics  Fully integrated system oscillator and N-MOSFET driver. No need for external resonator, 2 capacitors and transistor, increasing product competitive advantages.  Adjustable programming - suitable for different remote code formats.


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    ht48ra0-5ht622x20ssopir s27+9infrared led receiver s28transistor s46ir s28transistor s19infrared remote switchinfrared led receivertransistor s49transistor s28s16 transistor PDF

    a2724

    Abstract: Transistor A23 CFB0230A 2S302 A23 transistor TRANSISTOR a31 32 bit carry select adder
    Contextual Info: CFB0230A CFB0230A CFB023ÛA 32-bit Carry Select Adder description: CFB0230A uses a fast carry-select algorithm to perforin an addition of two 32-bit numbers. LOGIC SYMBOL : CI A31 :0 B31:0 CFB0230A CO + I S31:0 TïflE-f32 INPUTS LOADING IN TRANSISTOR PAIRS) :


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    cfb0230acfb02332-bitfle-f32+6a2724transistor a232s302a23 transistortransistor a3132 bit carry select adder PDF

    S-2806

    Contextual Info: I \ l E C HIGH ISOLATION VOLTAGE AC INPUT DARLINGTON TRANSISTOR TYPE SOP OPTOCOUPLER p^ong 4 DESCRIPTION FEATURES PS2806-1 and PS2806-4 are optically coupled isolators con­ taining a GaAs light emitting diode and an NPN silicon Darlington-connected phototransistor in a plastic SOP Small


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    ps2806-1ps2806-4ps2806-1-f3ps2806-4-f3+224-hours-2806 PDF