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    TRANSISTOR E11 Search Results

    TRANSISTOR E11 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    TRANSISTOR E11 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor TE 901 equivalent

    Abstract: transistor TE 901 IGT6D11 IGT6E11
    Contextual Info: IGT6D11,E11 Insulated Gate Bipolar Transistor 101 AMPERES 400, 500 VOLTS EQUIV. RdS ON = 0.27 Cl This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and


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    igt6d116d11-transistor te 901 equivalenttransistor te 901+1igt6e11 PDF

    K105 transistor

    Abstract: transistor k105 IGT4E11 IGT4D11 IGT-4E11
    Contextual Info: IGT4D11,E11 c s r 10 AMPERES 400, 500 VOLTS EQUIV. Rd S ON = 0.27 il Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and


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    igt4d11k105 transistortransistor k105igt4e11+1igt-4e11 PDF

    Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor


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    lm961632n3904 PDF

    Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor


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    lm961632n3904 PDF

    2N3904

    Abstract: LM96163 LM96163C LM96163CISD LM96163CISDX QFN10 RLs6
    Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor


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    lm961632n3904lm96163clm96163cisd+3lm96163cisdxqfn10rls6 PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2cy172cy182cy192cy20+122cy21500ma2n2222a 338tfk 9492n1167halbleiter index transistorad161bsy19al103ac128tfk 404tfk 931 PDF

    RTU620

    Contextual Info: LM96163 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Literature Number: SNAS433C LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm® BJT Transistor Beta


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    lm96163snas433crtu620 PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353 PDF

    Contextual Info: fìjUeJc&gct - / PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current


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    2sc55072sc5507-t2 PDF

    equivalent transistor TT 3034

    Abstract: transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718
    Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded (thru-hole) packages


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    -335/h-135/d-40-334/h-280/d-41-334/h-28q/d-41l-56sw-42/h-115+13l-565/w-42/h-12ot-23sc-59equivalent transistor tt 3034transistor tt 3034d718 transistord718 equivalenttransistor a769tt 3034 transistortransistor d718d718* transistork d718d718 PDF

    PRW 200

    Abstract: transistor VCE 1000V CMK2100 1bw transistor
    Contextual Info: 7 ^ 3 < ? -3 / F F 100 R 10 K 52E EUPEC Transistor Transistor ]> • aM D SST? Thermische Eigenschaften Rthjc Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VCES Maximum rated values 1000 V 100 A 751 MUPEC Thermal properties DC, pro Baustein / per module


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    34d32ci7prw 200transistor vce 1000vcmk2100+11bw transistor PDF

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    3186jlg color tv circuit diagram schematicsfree transistor equivalent book 2scnpn transistors list according to current, voltag+7rca sk cross-referencekia 4318transistor cs 9012til 322asx3704diode d.a.t.a. book1n1007 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    ic hxj 20381n52398db5ttfk 102 cny 70+6hxj 2038rca 40361 transistorrca 40362tfk 680 cny 70diode equivalent 1n34a2n5952 equivalent PDF

    FF15R10K

    Contextual Info: 7 *39-3/ F F 15R 10K SSE EUPEC D Ü D D lf iE Thermische Eigenschaften Transistor Transistor 34032^7 i RthJC Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1000 V 15 A RthCK lc 54b «U PEC Thermal properties DC, pro Baustein/per module


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    ff15r10k34d32ci7 PDF

    1BW TRANSISTOR

    Abstract: transistor 79t
    Contextual Info: 7 - 3 9 - 3 / F 300 R 10 K SSE EUPEC » • 34032^7 Q 000252 7TT «U PEC Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 1000 V 300 A 600 A 2000 W V ge 20 V Inversdiode Inverse dlode


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    q00025234d32ci71bw transistortransistor 79t PDF

    Contextual Info: BFR750L3RH NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz 3 1 2 • Ideal for WLAN and all 5-6 GHz applications • High OIP3 and P-1dB for driver stages


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    bfr750l3rh PDF

    BFR750L3RH

    Abstract: spice germanium diode BFR705L3RH
    Contextual Info: BFR750L3RH NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range 3 1 of wireless applications up to 10 GHz 2 • Ideal for WLAN and all 5-6 GHz applications • High OIP 3 and P-1dB for driver stages


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    bfr750l3rhspice germanium diodebfr705l3rh PDF

    Contextual Info: BC846A/B, BC847A/B/C, BC848A/B/C 250mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E ­Epitaxial planar die construction ­Surface device type mounting C ­Moisture sensitivity level 1 D ­Matte Tin Sn lead finish with Nickel(Ni) underplate


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    bc846a/bbc847a/b/cbc848a/b/c250mw+3ot-23mil-std-202mgt724 PDF

    transistor marking code SOT-23

    Abstract: transistor packing code 3f TRANSISTOR 3F t SOT-23 marking 050 transistor transistor sot23 3F transistor MARKING CODE 16 transistor sot23 SOT-23 transistor code 3e transistor SOT23 br sot-23 MARKING 3l
    Contextual Info: BC856A/B, BC857A/B/C, BC858A/B/C 250mW, PNP Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 D —Matte Tin Sn lead finish with Nickel(Ni) underplate


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    bc856a/bbc857a/b/cbc858a/b/c250mw+14ot-23mil-std-202c/10s008gramtransistor marking code sot-23transistor packing code 3ftransistor 3f tsot-23 marking 050 transistortransistor sot233f transistormarking code 16 transistor sot23sot-23 transistor code 3etransistor sot23 brsot-23 marking 3l PDF

    Contextual Info: BFR750L3RH NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range 3 1 of wireless applications up to 10 GHz 2 • Ideal for WLAN and all 5-6 GHz applications • High OIP 3 and P-1dB for driver stages


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    bfr750l3rh PDF

    TRANSISTOR 3F t

    Abstract: BC857A SOT-23 transistor code 3e
    Contextual Info: BC856A/B, BC857A/B/C, BC858A/B/C 250mW, PNP Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E ­Epitaxial planar die construction ­Surface device type mounting C ­Moisture sensitivity level 1 D ­Matte Tin Sn lead finish with Nickel(Ni) underplate


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    bc856a/bbc857a/b/cbc858a/b/c250mw+5ot-23mil-std-202transistor 3f tbc857asot-23 transistor code 3e PDF

    transistor 1f sot-23

    Abstract: transistor marking code SOT-23 1B SOT-23 1k sot-23 NPN BC846B SOT23 BC846B BC847A 1a sot-23 BC847C BC848A
    Contextual Info: BC846A/B, BC847A/B/C, BC848A/B/C 250mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 D —Matte Tin Sn lead finish with Nickel(Ni) underplate


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    bc846a/bbc847a/b/cbc848a/b/c250mw+13ot-23mil-std-202mgt724transistor 1f sot-23transistor marking code sot-231b sot-231k sot-23npn bc846b sot23bc846bbc847a1a sot-23bc847cbc848a PDF

    J5417AKK

    Abstract: MALLORY 150 CAPACITORS Rogers 6010.5 ATC100A PH1819-45A transistor 41 j5417
    Contextual Info: PH1819-45A M/A-OOM Wireless Power Transistor 45 Watts, 1805- 1880 MHz /MOCOVI M RF & Microwave Products Outline Drawing1 Description M/A-COM’s PH11819-45A is a high efficiency silicon bipo­ lar NPN transistor intended for use as a common emitter class AB stage in power amplifiers that operate in the 1805


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    ph1819-45aph11819-45aj5417akktt50m50a+5atc100amallory 150 capacitorsrogers 6010.5transistor 41j5417 PDF

    E110NA20

    Abstract: Ultrasonic welding circuit diagram schematic diagram UPS Ultrasonic welding circuit schematic diagram UPS 600 Power free schematic diagram welding device SMPS SCHEMATIC DIAGRAM vdgr test circuit CIRCUIT DIAGRAM UPS ultrasonic welding
    Contextual Info: STE110NA20 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST E110NA20 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 200 V < 0.019 Ω 110 A TYPICAL RDS(on) = 0.015 Ω HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY


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    ste110na20e110na20ultrasonic welding circuit diagramschematic diagram ups+7ultrasonic welding circuitschematic diagram ups 600 power freeschematic diagram welding devicesmps schematic diagramvdgr test circuitcircuit diagram upsultrasonic welding PDF