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    SOT-23 MARKING 3L Search Results

    SOT-23 MARKING 3L Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 MARKING 3L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KST42 / KST43 NPN Epitaxial Silicon Transistor Features • High-Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method KST42MTF 1D SOT-23 3L Tape and Reel KST43MTF 1E SOT-23 3L Tape and Reel


    Original     		PDF KST42 KST43 OT-23 KST42MTF OT-23 KST43MTF

    sot-23 Marking 3D

    Abstract: BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858
    Text: PNP General Purpose Transistor: BC856/857/858 Features: tLow current max.100mA tLow voltage (max.65v) Applications: t SOT-23 Ordering Information Type No. Marking: Package Code: BC856A/B 3D/3A/3B SOT-23 BC857A/B/C 3H/3E/3F/3G SOT-23 BC858A/B/C 3J/3K/3L


    Original     		PDF BC856/857/858 100mA) OT-23 BC856A/B BC857A/B/C BC858A/B/C BC856 sot-23 Marking 3D BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858

    2SA1162

    Abstract: 2SC2712
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SA1162 TRANSISTOR PNP FEATURES z Low noise : NF= 1dB(Typ.),10dB (Max.) z Complementary to 2SC2712. z Small Package. 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG


    Original     		PDF OT-23-3L OT-23-3L 2SA1162 2SC2712. -100mA -10mA 2SA1162 2SC2712

    2SA1037AK

    Abstract: 2SC2412K transistor marking fq
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SA1037AK SOT-23-3L TRANSISTOR PNP FEATURES z Excellent hFE linearity. z Complments the 2SC2412K. 1. BASE 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23-3L 2SA1037AK OT-23-3L 2SC2412K. -50mA 30MHz 2SA1037AK 2SC2412K transistor marking fq

    2SA1036K

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SA1036K SOT-23-3L TRANSISTOR PNP FEATURES z Large IC. IC= -500 mA z Low VCE(sat). Ideal for low-voltage operation. 1. BASE 2. EMITTER 3. COLLECTOR MARKING : HP, HQ, HR


    Original     		PDF OT-23-3L 2SA1036K OT-23-3L -100A -10mA -100mA -20mA 100MHz 2SA1036K

    Untitled

    Abstract: No abstract text available
    Text: 2SC2412K SOT-23-3L Transistor NPN SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features — Low Cob ,Cob = 2.0 pF (Typ). — Complements the 2SA1037AK 2.80 1.60 MARKING : BQ, BR, BS 0.15 1.90 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


    Original     		PDF 2SC2412K OT-23-3L OT-23-3L 2SA1037AK 100MHz

    2SA162

    Abstract: No abstract text available
    Text: 2SA162 SOT-23-3L Transistor PNP SOT-23-3L 1. BASE 2. EMITTER 2.92 0.35 3. COLLECTOR 1.17 Features — Low noise : NF= 1dB(Typ.),10dB (Max.) Complementary to 2SC2712. Small Package. — — 2.80 1.60 0.15 1.90 MARKING: SO , SY , SG Dimensions in inches and (millimeters)


    Original     		PDF 2SA162 OT-23-3L OT-23-3L 2SC2712. -100u -100mA -10mA 2SA162

    2SA1036K

    Abstract: No abstract text available
    Text: 2SA1036K SOT-23-3L Transistor PNP SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 3. COLLECTOR 1.17 Features — — 2.80 Large IC. IC= -500 mA Low VCE(sat). Ideal for low-voltage operation. 1.60 0.15 1.90 MARKING : HP, HQ, HR Dimensions in inches and (millimeters)


    Original     		PDF 2SA1036K OT-23-3L OT-23-3L -100A -10mA -100mA -20mA 100MHz 2SA1036K

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate DIODE SOT-23-3L RB421D Schottky barrier Diodes FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability + Marking: D3C Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃


    Original     		PDF OT-23-3L OT-23-3L RB421D 100mA

    Untitled

    Abstract: No abstract text available
    Text: 2SA1037AK SOT-23-3L Transistor PNP SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 3. COLLECTOR 1.17 Features — — 2.80 Excellent hFE linearity. Complments the 2SC2412K. 1.60 0.15 MARKING : FQ, FR, FS 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF 2SA1037AK OT-23-3L OT-23-3L 2SC2412K. -50mA 30MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate DIODE SOT-23-3L RB491D Schottky barrier Diodes FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability + Marking: D2E Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃


    Original     		PDF OT-23-3L OT-23-3L RB491D

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate DIODE SOT-23-3L RB420D Schottky barrier Diodes FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability + Marking: D3B Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃


    Original     		PDF OT-23-3L OT-23-3L RB420D

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate DIODE SOT-23-3L RB495D Schottky barrier Diodes FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability Marking: D3Q Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃


    Original     		PDF OT-23-3L OT-23-3L RB495D 200mA

    2SC2412K

    Abstract: 2SA1037AK
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SC2412K SOT-23-3L TRANSISTOR NPN FEATURES z Low Cob ,Cob = 2.0 pF (Typ). z Complements the 2SA1037AK 1. BASE 2. EMITTER 3. COLLECTOR MARKING : BQ, BR, BS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23-3L 2SC2412K OT-23-3L 2SA1037AK 100MHz 2SC2412K 2SA1037AK

    marking ACY

    Abstract: transistor ACY PNP acy transistor marking ACY SOT-23
    Text: 2SA1313 SOT-23-3L Transistor PNP SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features — — — Excellent hFE Linearity : hFE(2) =25(Min)at VCE =-6V,IC=- 400mA. High Voltage :VCEO=-50V(Min) Complements the 2SC3325. 2.80 1.60 0.15 1.90 MARKING : ACO,ACY


    Original     		PDF 2SA1313 OT-23-3L OT-23-3L 400mA. 2SC3325. -100mA -10mA -20mA -100A marking ACY transistor ACY PNP acy transistor marking ACY SOT-23

    Untitled

    Abstract: No abstract text available
    Text: SOT-23-3L Plastic-Encapsulate DIODE SOT-23-3L Schottky barrier Diodes + 2.80±0.05 1.60±0.05 1.9 0.95±0.025 1.02 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 0.35 Marking: D2E 2.92±0.05 RB491D Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃


    Original     		PDF OT-23-3L OT-23-3L RB491D

    Untitled

    Abstract: No abstract text available
    Text: SOT-23-3L Plastic-Encapsulate DIODE SOT-23-3L Schottky barrier Diodes + 2. 80¡ À0. 05 1. 60¡ À0. 05 1. 9 0. 95¡ À0. 025 1. 02 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 0. 35 Marking: D3B 2. 92¡ À0. 05


    Original     		PDF OT-23-3L OT-23-3L RB420D

    Untitled

    Abstract: No abstract text available
    Text: CYStech Electronics Corp. SOT-23 Dimension Marking: A L 3 B TE S 2 1 G V 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C D K H J *: Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040


    Original     		PDF OT-23 UL94V-0

    Untitled

    Abstract: No abstract text available
    Text: SOT-23-3L Plastic-Encapsulate DIODE SOT-23-3L Schottky barrier Diodes + 0. 95¡ À0. 025 1. 02 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 1. 9 Marking: D3C 2. 92¡ À0. 05


    Original     		PDF OT-23-3L OT-23-3L RB421D 100mA

    Untitled

    Abstract: No abstract text available
    Text: SOT-23-3L Plastic-Encapsulate DIODE SOT-23-3L Schottky barrier Diodes + 2. 80¡ À0. 05 1. 60¡ À0. 05 1. 9 0. 95¡ À0. 025 1. 02 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 0. 35 Marking: D3A 2. 92¡ À0. 05


    Original     		PDF OT-23-3L OT-23-3L RB400D

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SA1013 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURE y High voltage y Large continuous collector current capability 2. COLLECTOR 1 2 23 3. EMITTER MARKING: 1013 MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted )


    Original     		PDF OT-89-3L 2SA1013 OT-89-3L 200mA -500m -50mA -200mA

    Untitled

    Abstract: No abstract text available
    Text: BSS63 PNP General-Purpose Amplifier Description C This device is designed for general-purpose amplifier and switch applications requiring high voltages. Sourced from process 74. E SOT-23 Mark: T3 B Ordering Information Part Number Marking Package Packing Method


    Original     		PDF BSS63 OT-23 OT-23

    Untitled

    Abstract: No abstract text available
    Text: BCW68G PNP General-Purpose Amplifier Description C This device is designed for general-purpose amplifier and switching applications at currents to 500 mA. Sourced from process 63. E SOT-23 Mark: DG B Ordering Information Part Number Marking Package Packing Method


    Original     		PDF BCW68G OT-23 OT-23

    Untitled

    Abstract: No abstract text available
    Text: MMBT5771 PNP Switching Amplifier Description C This device is designed for very high-speed, saturated switching at collector currents to 100 mA. Sourced from process 65. E SOT-23 Mark: 3R B Ordering Information Part Number Marking Package Packing Method MMBT5771


    Original     		PDF MMBT5771 OT-23 OT-23