2SA162 Search Results

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC4210 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • High hFE: + 0.5 25 -0.0 3 + 0.25 1.5 - 0.15 h FE=100~320 -1 • 1 Watts Amplifier Applications. • Complementary to 2SA1621 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL

2SA1621

Abstract: 2SC4210
Contextual Info: 2SC4210 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4210 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 2SA1621 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)

Contextual Info: TO SHIBA 2SA1621 2 S A 1 621 TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO POWER AMPLIFIER APPLICATIONS + 0.5 2 .5 - 0 . 3 • • High hpE : hpE = 100~320 Complementary to 2SC4210 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

2SA1015

Abstract: 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A
Contextual Info: - 34 - m s Type No. £ M a n u f. 2SA 1535 , tö T 2SA 1535A tö T = * SANYO 2SB1037 X 3E TOSHIBA B 'S NEC 1 Tn« B tL HITACHI H ± il FUJITSU tö T MATSUSHITA — M MITSUBISHI 2SB649A = 2SA 1542 □—A 2SA 1543 □— A 2SA1015 2SB642 2SA 1544 b m. 2SA1624

SA1673

Abstract: 2SA1623 2SC4387 2sa161 2SA1616 2SA1670 2SA1671 2SA1615 2SA1615-Z 2SA1617
Contextual Info: - 44 - Ta=25U*Ep(ÏTc=25<C m 2SA1615 2SA1615-Z 2SA1616 2SA1617 2SA1618 2SA1619 2SA1619A 2SA1620 2SA1621 2SA1622 2SA1623 2SA1624 2SA1625 2SA1626 2SA1627 2SA1630 2SA1633 2SA1634 2SA1635 2SA1641 2SA1643 2SA1653 2SA1654 2SA1655 2SA1656 2SA1666 2SA1667 2SA1668

2sa1627

Abstract: pnp 600v 1a pnp transistor 600V TO-126C
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SA1627 TRANSISTOR PNP TO-126C FEATURES Power dissipation PCM : 1.25 W (Tamb=25℃) 1. EMITTER Collector current : -1 A ICM Collector-base voltage V V(BR)CBO : -600

BT 815 transistor

Abstract: Transistor BFR 96 pt 4115 2SA1625 PA33 T108 X108 ih 0565 r EI 33 LX108
Contextual Info: NEC l i f A I / 1] Silicon Tran sistor i i f X 2SA1625 PNP = S il£ i PNP Silicon Triple Diffused Transistor High Speed, High Voltage Switching mm O i^ ii E t 'C 'i'o V Ce o = - 4 0 0 ^ -fi • mm V V CE(sat)^ - 0 .5 V O T A 7 f s tf — 1 . 0 (T a — m

2SA1626

Abstract: K 4014 transistor pw 4014
Contextual Info: DATA SHEET NEC PNP SILICON TRANSISTOR ELECTRON DEVICE 2SA1626 * D E S C R IP T IO N The 2S A 1 6 2 6 is designed fo r general purpose am plifier and high speed switching applications. P A C K A G E D IM E N S IO N S in millimeters FEATURES • High Voltage.

2SA1627

Abstract: pnp transistor 600V 2sa162
Contextual Info: UTC 2SA1627 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627 is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. *High-speed switching

Contextual Info: 2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1621 Audio Power Amplifier Applications Unit: mm High hFE: hFE = 100~320 • Complementary to 2SC4210 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

Contextual Info: 2SA1620 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1620 Audio Frequency Amplifier Applications • Unit: mm Complementary to 2SC4209 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −80

Contextual Info: 2SC4210 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4210 Audio Power Amplifier Applications • High DC current gain: hFE = 100~320 • Complementary to 2SA1621 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

Contextual Info: 2SC4209 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4209 Driver Stage Amplifier Applications Voltage Amplifier Applications • Unit: mm Complementary to 2SA1620 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

2SA1620

Abstract: 2SC4209
Contextual Info: 2SA1620 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1620 ○ 励振段増幅用 ○ 電圧増幅用 • 単位: mm 2SC4209 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C) 項 目 記 号 定

Contextual Info: 2SA1627 Plastic-Encapsulate Transistors PNP TO-126C FEATURES Power dissipation PCM : 1.25 W Tamb=25℃ Collector current ICM : -1 A Collector-base voltage V V(BR)CBO : -600 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. EMITTER 2. COLLECTOR 3. BASE

pnp transistor 600V

Abstract: PNP -600v
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1627A Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR 1 „ TO-126C DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. „ FEATURES * High voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SA1625 TRANSISTOR PNP 1. EMITTER FEATURES z High Voltage z High Speed Switching z Low Collector Saturation Voltage 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

ci 3060 pt

Abstract: 2SA1627 transistor 2SA1627 2SA162
Contextual Info: SEC '> ' =1 > Silicon Transistor m + T fS rtX 2SA1627 n > b=7 > '^ 7.9 PN P = PNP Silicon Triple Diffused T ran sisto r High Speed High V oltag e Switching m # -Ç -fô lü IíE T - fo o V c e o = — 600 ^ mm) 7 .0 MAX. V o x > f 7 f v 7 X h°— K * si t v ^

2SA1627A

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1627A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications.  FEATURES * High voltage * Low collector saturation voltage.

2S897

Abstract: 2SA1178 2SA1225 2SA1371 2SA1243 2SA1628 2SA1586 2SA879 2SA1770 2SA1283
Contextual Info: 66 - m % tt T y p e No. 2 SB 1216 ^ ^ 2SB 1218 ^ 2SB 1218A a * 85 T fö T tö T 2SB 1219A fö 2SB 1220 ta 2SB 1219 V- 2SB 1222 2S8 1223 f 2SB 1224 2SB 1225 J 2SB 1226 ^ ±L 2SA1622 2SA1586 m ± m FU JITSU iß T MATSUS H I T A 2SB1218A 2 S A1576 2 S A 16 0 3

Contextual Info: 2SA1620 T O SH IB A 2 S A 1 620 TO SH IBA TRANSISTO R SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AU DIO FREQ U ENCY AM PLIFIER APPLICATIO N S + 0.5 2.5 - 0 .3 Complementary to 2SC4209 MAXIM UM RATINGS (Ta = + 0.25 1 .5 - 0 .1 5 , 25°C) SYMBOL CHARACTERISTIC

2SA1624

Contextual Info: Ordering number : 3 1 0 3 A PNP Epitaxial Planar Silicon Transistor 2SA1624 Color TV Chroma Output, High-Voltage Driver Applications

2SA1620

Abstract: 2SC4209
Contextual Info: TO SH IBA 2SC4209 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4209 Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONS • + 0.5 2 .5 -0 .3 Complementary to 2SA1620 I- MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: TO SH IB A 2SC4209 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4209 DRIVER STAGE AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONS • Complementary to 2SA1620 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage