TRANSISTOR BV-1 501 Search Results

DE275X2-501N16A

Contextual Info: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-501N16A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in

Contextual Info: DE275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.

DE275X2-501N16A

Abstract: "RF MOSFETs" RF POWER MOSFET 275X2-501N16A DE275X2
Contextual Info: DE275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSA1370 CRT DISPLAY, VIDEO OUTPUT • High Voltage • Low Reverse Transfer Capacitance : CRE=1.7pF ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

MSC1002

Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition

transistor BV-1 501

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC1395 TV VHF TUNER OSCILLATOR • High Current-Gain Bandwidth Product fT=600MHz Min • Output Capacitance Cob=1.5pF (Max) ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Sym bol Rating Unit VcBO VcEO V ebo ic Pc Tj

220v ac to 12V 10A SMPS

Abstract: smps 1000W 48V SMPS 1000w smps 500w half bridge 220v ac to 12V 20A SMPS TL431 928 smps 2000W VIPer smps 20w 12V flyback 1000w 500w half bridge smps
Contextual Info: Switch Mode Power Supplies Discretes & Standard ICs Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions Battery Charger and Adapter Front End Inrush PFC * Flyback Pout > 70W STBRXXX Bridge + + AC Post Regulation * TSM10x PWM + CV & CC

DTA144GKA

Abstract: inverter ic marking H.A
Contextual Info: DTA144GE DTA144GUA DTA144GKA Digital transistor, PNP, with 1 resistor Features Dimensions Units : mm • available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages package marking: DTA144GE, DTA144GUA, and DTA144GKA; K16 DTA144GE (EMT3) •

BV 1 501

Abstract: BV 501 transistor BV-1 501
Contextual Info: 2N6516 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VcEtf'SOOV • Colleclor Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25t) Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

nec 2501

Abstract: nec 2501 optocoupler 2501 optocoupler nec 2701 optocoupler 2501 2701 optocoupler NEC-2701 optocoupler 2501 dip 2501 NEC nec optocoupler
Contextual Info: California Eastern Laboratories Optocouplers Selection Guide NUMBERING SYSTEM All devices are available in lead free versions P S X X X X X — X — X — X— X Lead Finish None = Standard Finish A = Lead (Pb) Free Finish Identification number CTR Rank

Contextual Info: S A M SUNG SEMICONDUCTOR INC ' MMESAÖ11C8 «E O | Vil.Ml« 0 0 0 7 2 3 1 î | PHP EPITAXIAL SILICON TRANSISTOR T - a s - a DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Cotlector-Base Voltage Vc8 0 Collector-Em itter Voltage

MCA255

Abstract: C1894 C2090 MCA230 MCA231 Quality Technologies optocouplers
Contextual Info: QUALITY TECHNOLOGIES PHOTODARLINGTON OPTOCOUPLERS MCA230 MCA231 MCA255 PACKAGE db dh .Æ DESCRIPTION r- 6.86 6.3S o The MCA230, MCA231 and MCA255 are photodarlington optically coupled isolators. An infrared emitting diode coupled with a silicon photodarlington

2SB1181

Abstract: 2SB1241 2SB1260 2SD1898
Contextual Info: 2SB1260 / 2SB1181 /2SB1241 Transistors Power Transistor -80V, -1 A 2SB1260 / 2SB118112SB1241 •External dimensions (Units : mm) •Features 1) High breakdown voltage and high current. B V ceo = -8 0 V , lc = -1 A 2) Good hFE linearity. 3 ) LOW VcE(sat).

p421 coupler

Abstract: MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note
Contextual Info: Photocouplers PRODUCT GUIDE New Products •Photorelay T The TLP227GA Series of general-purpose photorelays features devices whose OFF-state voltage 400 V is superior to that of TLP227G Series devices (350 V). This superior OFF-state voltage allows larger safety

ScansU9X27

Contextual Info: Transistors Power Transistor - 80V, -1 A 2SB1260/2SB1181/2SB1241 •Features 1) High breakdown voltage and high current. V c e o = -80V, Ic = -1 A 2) Good fiFE linearity. 3 ) Low VcE(sai). 4) Complements the 2SD1898/ 2SD1863/2SD1733. •External dimensions (Units: mm)

MCA2255Z

Abstract: MCA2231Z MCA2230Z
Contextual Info: QUALITY TECHNOLOGIES VDE APPROVED 1 p h o t o d a r lin g t o n o p t o c o u p l e r s MCA2230Z MCA2231Z MCA2255Z tz z f DESCRIPTION 1 6.86 6.35 The MCA2230, MCA2231 and MCA2255 are photodarlington optically coupled isolators. An infrared emitting diode coupled with a silicon photodarlington

Contextual Info: Transistors General Purpose Transistor Isolated Dual Transistors IMZ4 • F e a tu re s 1) B o th • E x te rn a l dim en sio n s (U n its: mm) 2SA 1036K c h ip an d 2 S C 4 1 1K ch ip in a SM T p ackag e. 2.9±0.2 1.9±0.2 2 ) M ounting p o ssib le w ith SM T3 au ­

Contextual Info: Transistors Medium Power Transistor 80V, 1A 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F ►External dim ensions (Units: mm) •F e a tu re s 1) High V ceo. V = 80V ceo 2SD1898 2) High IC. Ic = 1 A (D C ) 3) G ood hre linearity. 4) c + 0 .2 5 - 0.1 1.6 ± 0.1

transistor tt 2222

Abstract: 9 BJE 53 mj 1504 transistor BFQ42 mj 1504 BLW29 tt 2222 transistor l5
Contextual Info: • bbSBTBl OOSTSflM ÔG7 H A P X N AtlER PHILIPS/DISCRETE BLW29 b*ÎE T> V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V. Because o f the high gain and excellent power

T108

Abstract: T109
Contextual Info: IMZ3A h -7 > v Z ^ /T ra n s is to rs I M 7 ^ A IIV Ifc O # % T M V U - X 7 K U - ^ î K t / W ^ Isolated Mini-Mold Device —S x 'h Îi^ -ü 'M /G e n e ra l Small Signal Amp. Dimensions Unit : mm t 1) SMT (SC-59) t H —fiflllC PNP N PN<D2<B<7) h 2) g  fr 'n J

transistor pnp a111

Abstract: NA41U TO-126 ON 150 watt hf transistor 12 volt PJO 390 CM NA42 NA42U NB021EY NB211YY NR001E
Contextual Info: NA41 NPN , NA42(PNP) Na j U^STMICOND {DISCRETE} ^ 5JIL13JL N A T L äfl SEMI C O N D (DISCRETE) National Semiconductor NA41(NPN) NA42(PNP) Dlf| bSD1130 DOaSSbT 7 28C 2 .5 Amp com plem entary p o w e r tra n s is to rs fl~| packages and lead coding features

A854S

Contextual Info: Transistors Medium Power Transistor -32V, - 0.5A 2SA1036K/2SA1577/2SA854S • F e a tu re s 1) •E x te rn a l dim ensions (Units: mm) Large lc. Icmbx, — —500mA 2SA1577 2SA1036K 2) Low VcEisat). O p tim a l fo r lo w -v o ltage operation. 3) Com plem ents the 2SC 2411K/

d1189f

Abstract: 2SB891 d1758 2SB891F 2sb1188 2sb1277
Contextual Info: Transistors Medium power Transistor -32V, -2A 2 S B 1 1 8 8 /2 S B 1 1 8 2 /2 S B 1 2 4 0 /2 S B 8 9 1 F / 2 S B 8 2 2 /2 S B 1 2 7 7 /2 S B 9 1 1 M •F e a tu re s 1) ^External dim ensions (Units: m m ) LOW VcE(sat). 2SB1188 VcElsat; = —0 .5 V (Typ.)

MMBT5086

Abstract: TRANSISTOR 501 sot23 marking 501
Contextual Info: INC ' SAMSUNG SEMICONDUCTOR M M E S A Ö 1 1C8 «E | T i l l i n g 00 07 2 3 1 T | O PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Cotlector-Base Voltage Vc8 0 Collector-Emitter Voltage