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    DE275X2 Search Results

    DE275X2 Datasheets (4)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    DE275X2-102N06A
    Directed Energy RF Power MOSFET Original PDF 79.24KB 3
    DE275X2-102N06A
    IXYS TRANS MOSFET N-CH 1000V 16A 8DE 275x2 Original PDF 161.28KB 4
    DE275X2-501N16
    IXYS Original PDF 79.28KB 3
    DE275X2-501N16A
    Directed Energy RF Power MOSFET Original PDF 79.27KB 3
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    DE275X2 Price and Stock

    IXYS Corporation

    IXYS Corporation DE275X2-501N16A

    POWER FIELD-EFFECT TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components DE275X2-501N16A 4
    • 1 $131.06
    • 10 $117.95
    • 100 $117.95
    • 1000 $117.95
    • 10000 $117.95
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    DE275X2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DE275X2-102N06A

    Abstract: 102N06 DE275X2 102N06A 400P DE-27
    Contextual Info: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-102N06A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in


    Original
    de275x2-102n06a102n06de275x2102n06a+2400pde-27 PDF

    Contextual Info: DE275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.


    Original
    de275x2-501n16a PDF

    DE275X2-501N16A

    Contextual Info: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-501N16A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in


    Original
    de275x2-501n16a PDF

    DE275X2-501N16A

    Abstract: "RF MOSFETs" RF POWER MOSFET 275X2-501N16A DE275X2
    Contextual Info: DE275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.


    Original
    de275x2-501n16arf mosfetsrf power mosfet275x2-501n16a+1de275x2 PDF

    DE275X2-102N06A

    Abstract: mosfet pair DE275X2-102N06A 1000 volt mosfet 50W rf power transistor 100MHz RF POWER MOSFET TRANSISTOR 100MHz 102N06A 400P 10-DOF 275X2-102N06A ssd2
    Contextual Info: DE275X2-102N06A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.


    Original
    de275x2-102n06a102n06amosfet pair de275x2-102n06a1000 volt mosfet+650w rf power transistor 100mhzrf power mosfet transistor 100mhz400p10-dof275x2-102n06assd2 PDF

    DE275X2-102N06A

    Abstract: mosfet pair DE275X2-102N06A 1000 volt mosfet "RF MOSFETs" 102N06A 400P 275x2-102n06a rf power mosfet MOSFET 50 amp 1000 volt
    Contextual Info: DE275X2-102N06A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.


    Original
    de275x2-102n06a102n06amosfet pair de275x2-102n06a1000 volt mosfet+5rf mosfets400p275x2-102n06arf power mosfetmosfet 50 amp 1000 volt PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    element-14f155-6af155-10af165-15a+11f175-25airfb4115bty79 equivalentdiode skn 21-04marking code w04 sot-23bbc 598 479 diodemw 137 600gtfk 401 s 673vishay telefunken tfk transistorinfineon transistor marking w31jys marking transistor PDF

    DE-Series

    Abstract: mosfet High-Speed Switching 100mhz Directed Energy DE-150 DE-275 DE-375
    Contextual Info: DIRECTED ENERGY, INC. TECHNICAL NOTE DE-SERIES FAST POWER MOSFET AN INTRODUCTION George J Krausse, Directed Energy, Inc. Abstract The DE-SERIES Fast Power TM MOSFETs are unique high power devices designed as a circuit element from the ground up for high speed, high


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    de-seriesmosfet high-speed switching 100mhzdirected energyde-150+2de-275de-375 PDF

    DE275-102N06X2A

    Abstract: 102n06x2a amplifier circuit diagram class D 1000w PRF-1150 circuit diagram of 13.56MHz RF Generator plasma DE275X2-102N06A DEIC420 RF MOSFET Gate Driver IC 13.56Mhz rf 1W amplifier module circuit diagram of 13.56MHz RF Generator Class E power amplifier, 13.56MHz
    Contextual Info: DIRECTED ENERGY, INC.TECHNICAL NOTE PRF-1150 1KW 13.56 MHz CLASS E RF GENERATOR EVALUATION MODULE Matthew W. Vania Directed Energy, Inc. Abstract The PRF-1150 module is a self-contained 1KW 13.56MHz RF source. The module facilitates operation and evaluation of the DEIC420 RF MOSFET gate


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    prf-115056mhzdeic420de275x2-102n06a+90-471-03018-xde275-102n06x2a102n06x2aamplifier circuit diagram class d 1000wcircuit diagram of 13.56mhz rf generator plasmadeic420 rf mosfet gate driver ic13.56mhz rf 1w amplifier modulecircuit diagram of 13.56mhz rf generatorclass e power amplifier, 13.56mhz PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF

    "RF MOSFETs"

    Abstract: IXz210n50l IXZ2210N50L RF MOSFETs "RF MOSFET" 300W DE275X2 Linear MOSFET mosfet 300w sd2 transistor DE275
    Contextual Info: TM Linear RF Z-MOS Ultra Linear Low Capacitance RF Power MOSFET May 2003 Description This new line of low capacitance linear RF MOSFETs are ideal for applications up to 250MHz including; 1.5T & 3T MRI, HF & VHF Base Stations and Broadcast applications. The new linear Z-MOSTM portfolio features a BVDSS voltage rating of 500V that is nearly


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    250mhzde275de275x2ixz210n50l+8650pfixz2210n50l175mhzrf mosfetsrf mosfet" 300wlinear mosfetmosfet 300wsd2 transistor PDF

    102N06

    Abstract: DE275X2-102N06A PLUS247 501N2 DE275-501N16A DE475-501N44A H12N50 DE475-102N21A ISOPLUS247 IXFX
    Contextual Info: 500KHz-82MHz POWER MOSFETS O SWITCH MODE POWER SUPPLIES & RF GENERATORS January 2003 The IXYS RF Switch Mode MOSFET family is ideal for applications requiring fast switching including laser driver, induction heating, switch mode power supplies and other non-linear industrial applications. An extensive product


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    500khz-82mhzo-247plus247isoplus247+8102n06de275x2-102n06a501n2de275-501n16ade475-501n44ah12n50de475-102n21aixfx PDF