DE275X2-102N06A
Abstract: 102N06 DE275X2 102N06A 400P DE-27
Contextual Info: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-102N06A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in
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DE275X2-102N06A
DE275X2-102N06A
102N06
DE275X2
102N06A
400P
DE-27
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13.56mhz c class amp
Abstract: ferrite core binocular air variable capacitor mp850 25.0 DE275-102N06A
Contextual Info: DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient
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DE275-102N06A
102N06A
13.56mhz c class amp
ferrite core binocular
air variable capacitor
mp850 25.0
DE275-102N06A
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air variable capacitor
Abstract: 13.56mhz c class amp DE275-102N06A 102N06A GME90901 DE275102N06A 102N06 KW 13.56MHz 102KW 10-DOF
Contextual Info: DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Maximum Ratings VDSS = 1000 V ID25 = 8A RDS on = 1.5 Ω PDC = 590 W Symbol Test Conditions VDSS TJ = 25°C to 150°C
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DE275-102N06A
102N06A
air variable capacitor
13.56mhz c class amp
DE275-102N06A
GME90901
DE275102N06A
102N06
KW 13.56MHz
102KW
10-DOF
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102N06A
Abstract: 400P DE275-102N06A 10-DOF 102N06
Contextual Info: Directed Energy, Inc. An DE275-102N06A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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DE275-102N06A
102N06A
400P
DE275-102N06A
10-DOF
102N06
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DE275-102N06A
Abstract: DE375-102N10A DE375-501N16A
Contextual Info: RF Power MOSFETs VDSS ID25 RDS on max V 500 TC = 25 °C A 16 Ω 0.5 DE375-501N16A 1000 6 2.0 DE275-102N06A 10 1.2 DE375-102N10A Part Number Note: These part types are available from Directed Energy, Inc.
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DE375-501N16A
DE275-102N06A
DE375-102N10A
DE275-102N06A
DE375-102N10A
DE375-501N16A
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DE275-102N06A
Abstract: 900 v 6 amp mosfet 102N06A 400P 10-DOF 102N
Contextual Info: DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient
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DE275-102N06A
102N06A
DE275-102N06A
900 v 6 amp mosfet
400P
10-DOF
102N
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DE275X2-102N06A
Abstract: mosfet pair DE275X2-102N06A 1000 volt mosfet 50W rf power transistor 100MHz RF POWER MOSFET TRANSISTOR 100MHz 102N06A 400P 10-DOF 275X2-102N06A ssd2
Contextual Info: DE275X2-102N06A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.
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DE275X2-102N06A
DE275X2-102N06A
102N06A
mosfet pair DE275X2-102N06A
1000 volt mosfet
50W rf power transistor 100MHz
RF POWER MOSFET TRANSISTOR 100MHz
400P
10-DOF
275X2-102N06A
ssd2
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Directed Energy
Abstract: DE275-102N06A
Contextual Info: Directed Energy, Inc. An DE275-102N06A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000
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DE275-102N06A
Directed Energy
DE275-102N06A
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DE275X2-102N06A
Abstract: mosfet pair DE275X2-102N06A 1000 volt mosfet "RF MOSFETs" 102N06A 400P 275x2-102n06a rf power mosfet MOSFET 50 amp 1000 volt
Contextual Info: DE275X2-102N06A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.
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DE275X2-102N06A
DE275X2-102N06A
102N06A
mosfet pair DE275X2-102N06A
1000 volt mosfet
"RF MOSFETs"
400P
275x2-102n06a
rf power mosfet
MOSFET 50 amp 1000 volt
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DE275-102N06X2A
Abstract: 102n06x2a amplifier circuit diagram class D 1000w PRF-1150 circuit diagram of 13.56MHz RF Generator plasma DE275X2-102N06A DEIC420 RF MOSFET Gate Driver IC 13.56Mhz rf 1W amplifier module circuit diagram of 13.56MHz RF Generator Class E power amplifier, 13.56MHz
Contextual Info: DIRECTED ENERGY, INC.TECHNICAL NOTE PRF-1150 1KW 13.56 MHz CLASS E RF GENERATOR EVALUATION MODULE Matthew W. Vania Directed Energy, Inc. Abstract The PRF-1150 module is a self-contained 1KW 13.56MHz RF source. The module facilitates operation and evaluation of the DEIC420 RF MOSFET gate
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PRF-1150
56MHz
DEIC420
DE275X2-102N06A
0-471-03018-X
DE275-102N06X2A
102n06x2a
amplifier circuit diagram class D 1000w
circuit diagram of 13.56MHz RF Generator plasma
DEIC420 RF MOSFET Gate Driver IC
13.56Mhz rf 1W amplifier module
circuit diagram of 13.56MHz RF Generator
Class E power amplifier, 13.56MHz
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