TRANSISTOR BU408 Search Results

tip122 tip127 audio board

Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
Contextual Info: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

b12a transistor

Abstract: BU408 BU406 BU407 407 transistor
Contextual Info: Data Sheet Central" Sem iconductor Corp. BU406 BU407 BU408 NPN SILICON POWER TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-220 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION

3EMN

Abstract: BU407D bu406d BII407D BU408D bu406d.bii407d
Contextual Info: NPN POWER TRANSISTOR NPN BU406D BU407D These devices are high voltage,high speed transistors for hor­ izontal deflection output stages of TV's and C7V"s. circuits. FEATURES: * Collector-Emitter Sustaining Voltage VCEV = 330 V Min. - BU407D = 400 V (Min.) - BU406D, BU408D

transistor IC 12A 400v

Abstract: 400v 6a transistor 400V 100MA NPN TV power transistor datasheet BU408D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU408D DESCRIPTION •High Voltage: VCEV= 400V Min ·Fast Switching Speed: tf= 0.5 s(Max) ·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 6A APPLICATIONS ·Designed for use in horizontal deflection output stages

BU407D

Abstract: ND06 BU-406D bu406d BII407D BU408D *U407D
Contextual Info: /zA MOS PEC NPN POWER TRANSISTOR NPN BU406D BU407D These devices are high voltage,high speed transistors for hor­ izontal deflection output stages of TV's and C7V"s. circuits. FEATURES: * Collector-Emitter Sustaining Voltage VCEV = 330 V Min. - BU407D = 400 V (Min.) - BU406D, BU408D

bu408

Abstract: BU406
Contextual Info: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE TO -220 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peck Current

transistor BU408

Contextual Info: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE TO-220 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

bu408 equivalent

Abstract: BU408 BU406 BU406H
Contextual Info: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peck Current

Contextual Info: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic V cbO Symbol 400 V Collector-Emltter Voltage VcEO 200 V Emitter-Base Voltage

BU406

Abstract: transistor BU406 bu408 250V transistor npn 2a ICM-10 transistor IC 12A 400v
Contextual Info: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE TO-220 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic VCBO 400 V Collector-Emitter Voltage VCEO 200 V Emitter-Base Voltage

Contextual Info: BU406 / 406H / 408 NPN Epitaxial Silicon Transistor Features • High-Voltage Switching • Use In Horizontal Deflection Output Stage 1 1.Base TO-220 2.Collector 3.Emitter Ordering Information Part Number Marking Package Packing Method BU406 BU406 TO-220 3L

bu406

Abstract: bu408 transistor BU408
Contextual Info: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage V cBO 400 V Collector-Emitter Voltage V cEO 200 V Emitter-Base Voltage

Contextual Info: BU406/406H/408 NPN Epitaxial Silicon Transistor Features • High Voltage Switching • Use In Horizontal Deflection Output Stage TO-220 1 1.Base Absolute Maximum Ratings Symbol 2.Collector TC = 25°C unless otherwise noted Parameter VCBO VCEO Collector-Base Voltage

Contextual Info: BU406/406H/408 BU406/406H/408 High Voltage Switching • Use In Horizontal Deflection Output Stage TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage

transistor BU406

Abstract: BU406 BU406H BU408
Contextual Info: BU406/406H/408 BU406/406H/408 High Voltage Switching • Use In Horizontal Deflection Output Stage TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage

bu408

Abstract: BU406
Contextual Info: BU406/406H/408 BU406/406H/408 High Voltage Switching • Use In Horizontal Deflection Output Stage 1 TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Value Units VCBO Symbol Collector-Base Voltage

Contextual Info: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-Base Voltage C haracteristic VcBO Sym bol 400 V C ollector-E m itter Voltage VcEO 200 V Em itter-Base Voltage

bu406 cross

Abstract: BU406TU
Contextual Info: BU406/406H/408 BU406/406H/408 High Voltage Switching • Use In Horizontal Deflection Output Stage TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage

C 3311 transistor

Abstract: NPN Transistor 5A 400V T-33-11 KSD5017 transistor BU408 samsung tv KSD5017 BU406 BU406H power TRANSISTOR 800V 5A
Contextual Info: SAMSUNG S E M I C O N DUCTOR 14E INC D | 7*^4145 G0Q7bfla b NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5017 T-33-11 COLOR TV HORIZONTAL'OUTPUT APPLICATIONS T O *3P F High Collector-Base VWtage VCeo=1500V ABSOLUTE MAXIMUM RATINGS (Ta=25°C ) Characteristic

iC5A

Abstract: BU406 BU408 transistor BU406 250V transistor npn 2a BU406H npn switching transistor Ic 5A
Contextual Info: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE TO-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Symbol Rating Unit VCBO VCEO VEBO IC ICM IB PC Tj Tstg 400 200 6 7 10 4 60 150 -65~150

BU406

Abstract: BU408 250V transistor npn 2a BU406H 250v 5a npn transistor Vbe 1
Contextual Info: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-Base Voltage C haracteristic V cbO Sym bol 400 V C ollector-E m ltter Voltage V cE O 200 V Em itter-Base Voltage

fjaf6812

Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Contextual Info: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320