BD330
Abstract: Q 817 BD329 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD330 PNP power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification PNP power transistor
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transistor ph 45 v
Contextual Info: DISCRETE SEMICONDUCTORS BD330 PNP power transistor 1999 Apr 26 Product specification Supersedes data of 1997 Apr 22 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP power transistor BD330 FEATURES PINNING • High current max. 3 A
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BD330
Abstract: Sp pnp transistor BD330 transistor 1211 BD329 BP317 philips all transistor car radio
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD330 PNP power transistor Product specification Supersedes data of 1997 Apr 22 1999 Apr 26 Philips Semiconductors Product specification PNP power transistor BD330 PINNING FEATURES • High current max. 3 A
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m3d100bd330o-126bd329+8mam272sca63115002/00/03/pp8sp pnptransistor bd330transistor 1211bp317philips all transistor car radio
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MAR 745 TRANSISTOR
Abstract: transistor BD329 BD329 BD330 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD329 NPN power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 07 Philips Semiconductors Product specification NPN power transistor
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m3d100bd329o-126bd330+6mam254sca53117047/00/02/pp8mar 745 transistortransistor bd329bp317
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automotive ignition tip162
Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —
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bu323aptip73btip74tip74a+15tip74btip75tip75atip75btip75cautomotive ignition tip162bc337 cross-referencebu108bd390 cross referencereplacement transistor bc337bux48a2sd1815 "cross referencetip102 darlington transistormotorola mj15022mj1000
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transistor BD
Abstract: TRANSISTOR bd 330
Contextual Info: 2SC D • fl23SbDS QQQHBMI T M S I E G PNP Silicon Planar Transistor BD 330 _ 25C0 4 3 4 9 D T - 3 1 '/ ? SIEMENS AKTIENGESELLSCHAF BO 330 is an epitaxial PNP silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 329 it is particularly
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fl23sbds330/bdq62702-d395q62702-d401+6q62902-b63235bqsgq04351bd330transistor bdtransistor bd 330
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MJE15020
Abstract: DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high–voltage general purpose applications. • Suitable for Transformerless, Line–Operated Equipment
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mje340tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n6488mje15020dts423mje15033 replacement2sc243bd388-52sc1826bd2632sc1903se93022sa698
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BUS48AP
Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
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bd166bd165tip73btip74+15tip74atip74btip75tip75atip75bbus48ap2sc1381mje15033 replacement2sa698bd477bd139.162n3072sc12242sd549bd139.10
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Q62702-D401
Abstract: TRANSISTOR bd 330 b0330 A-04 Q62702-D395 Q62902-B63 spring washer 330 transistor transistor BD 329 4l transistor
Contextual Info: 2SC J> m ÔSBSbQS GGQHBMÌ T H S I E â PNP Silicon Planar Transistor _ BD 330 25C 04-349 D 7~“ 3 W / SIEMENS AKTIENGESELLSCHAF BO 3 3 0 is an epitaxial PNP silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 329 it is particularly
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fl23sbdsq62702-d395330/bdq62702-d401+11q62902-b63200ps23sbosq0043s1transistor bd 330b0330a-04spring washer330 transistortransistor bd 3294l transistor
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BU108
Abstract: 2SC1629 equivalent BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:
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bux41tip73btip74tip74a+11tip74btip75tip75atip75btip75c2n6488bu1082sc1629 equivalentbdx54bu326bu100
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BU108
Abstract: BC337 circuit example BC337 rbe BDX54 replacement transistor BC337 BU326 BU100 MOTOROLA 2N3773
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU522B High Voltage Silicon Power Darlingtons 7 AMPERES DARLINGTON POWER TRANSISTORS NPN SILICON 450 VOLTS 75 WATTS Power Transistor mainly intended for use as ignition circuit output transistor. • Specified minimum sustaining voltage:
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bu522btip73btip74tip74a+14tip74btip75tip75atip75btip75c2n6488bu108bc337 circuit examplebc337 rbebdx54replacement transistor bc337bu326bu100motorola 2n3773
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2cy172cy182cy192cy20+122cy21500ma2n2222a 338tfk 9492n1167halbleiter index transistorad161bsy19al103ac128tfk 404tfk 931
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BU208A equivalent
Abstract: BD237 similar IC 3843 8 Pin BU108 BU208 2N4347 BD-31 2n3055 motorola bdx54c equivalent MJ13330
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ13333 Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERE NPN SILICON POWER TRANSISTORS 400–500 VOLTS 175 WATTS The MJ13333 transistor is designed for high voltage, high–speed, power switching
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mj13333amp32tip73btip74+15tip74atip74btip75tip75atip75bbu208a equivalentbd237 similaric 3843 8 pinbu108bu2082n4347bd-312n3055 motorolabdx54c equivalentmj13330
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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2SD418
Abstract: TIP33C equivalent k 3436 transistor IR647 TIP121 transistor buv18a BU108 2SC1086 tip122 motor control 2N6023
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000 Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed,
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mj10000204aatip73btip74+15tip74atip74btip75tip75atip75b2sd418tip33c equivalentk 3436 transistorir647tip121 transistorbuv18abu1082sc1086tip122 motor control2n6023
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BU108
Abstract: 2SD1816 BDX54 motorola MJ3000 MJD42C equivalent BU326 BU100 2N5631
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD180 Plastic Medium Power Silicon PNP Transistor 3.0 AMPERES POWER TRANSISTOR PNP SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
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BU108
Abstract: BDT3 2SC1943 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE8503A* Advance Information SWITCHMODE Series *Motorola Preferred Device NPN Bipolar Power Transistor POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS — BVCES 80 WATTS The MJE8503A transistor is designed for high voltage, high speed, power switching
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2N3055 equivalent transistor NUMBER
Abstract: bd139 equivalent transistor MJE350 equivalent 2n6284 equivalent TIP152 equivalent MJE371 equivalent bd139 equivalent bd139 3v BUL45 equivalent BU108
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE1320 Data Sheet Designer's NPN Silicon Power Transistor Switchmode Series This transistor is designed for high–voltage, power switching in inductive circuits where RBSOA and breakdown voltage are critical. They are particularly suited for
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mje1320tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n64882n3055 equivalent transistor numberbd139 equivalent transistormje350 equivalent2n6284 equivalenttip152 equivalentmje371 equivalentbd139 equivalentbd139 3vbul45 equivalentbu108
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bu806 REPLACEMENT
Abstract: k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s.
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220abbu806tip73btip74+15tip74atip74btip75tip75atip75btip75cbu806 replacementk 3569bu1082sd211nsp2100tl mje2955t2sc19432sc1419bu326
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2SA1046
Abstract: transistor bc 851 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 2N6107 equivalent BU326 BU108 BU100 BUL1 2N3055 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUH51 Advance Information SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS The BUH51 has an application specific state–of–art die designed for use in 50 Watts Halogen electronic transformers.
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buh51tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n64882sa1046transistor bc 851npn power darlington transistors high voltage high icm to-2472n6107 equivalentbu326bu108bu100bul12n3055bdv64
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automotive ignition tip162
Abstract: BU323A equivalent 2SA1046 BC337 rbe BU108 TIP102 Darlington transistor bc337 cross-reference 2SC190 replacement transistor BC337 BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323A NPN Silicon Power Darlington Transistor The BU323A is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. COLLECTOR • VCE Sat Specified at – 40_C = 2.0 V Max. at IC = 6 A.
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bu323a204aatip73btip74+15tip74atip74btip75tip75atip75bautomotive ignition tip162bu323a equivalent2sa1046bc337 rbebu108tip102 darlington transistorbc337 cross-reference2sc190replacement transistor bc337bu326
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transistor cross reference
Abstract: BD139 fall time motorola MJ15003 BU108 2SA1046 bd139 140 TIP42A equivalent motorola 2n3772 transistor mj3001 TL MJE2955T
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUH100 Data Sheet Designer's SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTOR 10 AMPERES 700 VOLTS 100 WATTS The BUH100 has an application specific state–of–art die designed for use in 100 Watts Halogen electronic transformers.
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buh100tip73btip74tip74a+15tip74btip75tip75atip75btip75ctransistor cross referencebd139 fall timemotorola mj15003bu1082sa1046bd139 140tip42a equivalentmotorola 2n3772transistor mj3001tl mje2955t
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2SA835
Abstract: transistor D 1557 bu806 equivalent 2SD436 2SD669 equivalent BU108 TL 188 TRANSISTOR PNP 2Sd525 equivalent 2sa1046 2N6021
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE9780* Advance Information PNP Silicon Power Transistor *Motorola Preferred Device The MJE9780 is designed for vertical output of 14–inch to 17–inch televisions and CRT monitors, as well as other applications requiring a 150 volt PNP transistor.
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mje9780220abmadc/10tip73b+15tip74tip74atip74btip75tip75a2sa835transistor d 1557bu806 equivalent2sd4362sd669 equivalentbu108tl 188 transistor pnp2sd525 equivalent2sa10462n6021
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2N4922
Abstract: BU108 2SB655 BD390 MJ11021 2sb557 BDX54 2n6107 MOTOROLA 2SC1943 MJE2482
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV23 SWITCHMODE Series NPN Silicon Power Transistor 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 15 at IC = 8 A
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buv23tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n64882n4922bu1082sb655bd390mj110212sb557bdx542n6107 motorola2sc1943mje2482
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