TRANSISTOR B35 Search Results

Contextual Info: TRANSISTOR MODULES- Q C A 150B A 60 U L;E 76102 M ) QCA1 5 0 B A 6 0 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paral­ leled fast recovery diode ( t r r : 200ns). The mounting base of the

Contextual Info: Transistors General Purpose Transistor Isolated Dual Transistors IMT17 •Features 1) Two 2SA1036K chips in a SMT package. 2) Mounting possible with SMT3 au­ tomatic mounting machine. 3) Transistor elements are indepen­ dent, eliminating interference.

B35AP

Contextual Info: Philips Sem iconductors bbS3S31 □OSISb'l T13 • APX NPN 4 GHz wideband transistor ^ Product specification ^ BFQ34T N AriER PHILIPS/PISCRETE b'lE P PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The

2SC3735

Abstract: hFE CLASSIFICATION Marking B35 2SA1462 b35 sc-59
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3735 HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR <R> FEATURES PACKAGE DRAWING Unit: mm • High-speed switching 2.8±0.2 +0.1 0.4 –0.05 • Low collector saturation voltage • High gain bandwidth product • Low collector capacitance

Contextual Info: PowerM OS transistor N AMER PHILIPS/DISCRETE _ BU Z63_J DbE D • hbSBTBl D014b33 T ■ July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in

hFE CLASSIFICATION Marking B35

Abstract: 2SA1610 TC-2104 2SC4176 Mark B34 NPN
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4176 HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR <R> FEATURES PACKAGE DRAWING Unit: mm • High-speed switching 2.1±0.1 1.25±0.1 • Low collector saturation voltage • High gain bandwidth product 2 3 1 ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C)

74als power consumption

Abstract: 74AS Characteristics Introduction about 74ls 74AS ALS TTL family characteristics 74LS ALS74 AN-476 C1995 DM54
Contextual Info: INTRODUCTION Since the introduction of the first bipolar Transistor-Transistor Logic TTL family (DM54 74) system designers have wanted more speed less power consumption or a combination of the two attributes These requirements have spawned other logic families such as the DM54 74L (low

lkt 108

Abstract: 101B2 hFE CLASSIFICATION Marking B35 B34 transistor marking IAY 2SC3735 TZ marking transistor b35 NEC B34
Contextual Info: SEC SILICON TRANSISTOR ELECTRON DEVICE • 2SC3735 _ HIGH SPEED SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURE PACKAGE DIMENSIONS in millimeters • High Speed: t on < 1 2 ns t0ff < 18 ns 2 .8 ± 0.2 0-65 ±8:ls 1.5 ABSOLUTE MAXIMUM RATINGS

Contextual Info: SILICON TRANSISTOR 2SC4176 HIGH SPEED SWITCHING NPIM SILICON EPITAXIAL TRANSISTOR FEATURE PACKAGE DIMENSIONS • in m i ll i m e t e r * High Speed : to, < 12 ns t ofT < 1 8 ns ABSOLUTE M A XIM U M RATINGS Maximum Voltages and Current Ta « 25 °C Collector to Base Voltage

2SC3735

Contextual Info: SEC ELECTRONDEVICE / / SILICON TRANSISTOR J 2SC3735 HIGH SPEED SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURE PACKAGE DIMENSIONS in m illim e te rs • High Speed: t on < 12 ns to ff< 1 8 n s 2 . 8 ± 0.2 0 -6 5 i g U ABSOLUTE M A XIM U M RATINGS

ca3096

Abstract: CA3096AE
Contextual Info: HARRIS SEIUCOND SECTOR b lE D • 43G 2271 TTT ■ IHAS CA3096 HARRIS S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Description Applications • D 047D 13 The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of

BLF543

Abstract: 4312 020 36640 2222 kn a ceramic capacitor, 20pF 2222 capacitor philips Go-mat capacitor philips 425 ATC capacitor 2322 151 2222 030 capacitor philips
Contextual Info: Product specification Philips Semiconductors UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES BLF543 SbE D • 711Dfl2b 50b « P H I N PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability

FET 4900

Abstract: CP CLARE 4367 MOS FET SOT-223 MOS FET SOT-223 ON CPC5602C CPC5602CTR CPC5604A CPC5610A CPC5611A
Contextual Info: CPC5602C N Channel Depletion Mode FET Description The CPC5602C is an “N” channel depletion mode Field Effect Transistor FET that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage

TRANSISTOR S 813

Abstract: BFQ265 BFQ265A NPN high frequency
Contextual Info: ^^»r«Juc^pM jficatjon Philips Semiconductors NPN high frequency high voltage transistor PHILIPS 5bE T> INTERNATIONAL FEATURES m 711062b BFQ265; BFQ265A □□4ShS3 7TT • P H I N PINNING • High breakdown voltages • Low output capacitance 1 emitter PIN

Contextual Info: SIEMENS BFS 480 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • f j = 7GHz F = 1.5dB at 900MHz n • Two (galvanic) internal isolated

Contextual Info: rSTOKO TK702XX 1.03 V REGULATOR WITH ON/OFF SWITCH FEATURES APPLICATIONS • Low Input Voltage Operation Single Battery Cell ■ Internal PNP Transistor ■ Pagers ■ Built-In Shutdown Control (Off Current, 8 |iA Typ) ■ Low Dropout Voltage (30 mV Typ)

A1567

Abstract: NDB7060L NDP7060L transistor b35 A-1567
Contextual Info: Na t i o n a I Semiconductor'“ June 1996 NDP7060L/ NDB7060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS

LOC110

Abstract: 314 optocoupler isolator transformer loop power ITC117P optocoupler 202 electronic schematic CP Clare RELAY opto-coupler AN
Contextual Info: APPLICATION NOTE AN-114 ITC117P Integrated Telecom Circuit AN-114 Clare’s Integrated Telecom Circuit ITC117P features combined circuitry in one 16 Pin SOIC package for: • • • • 1-Form-A Solid State Relay for use as Hookswitch Bridge Rectifier Darlington Transistor

MCB700

Abstract: n7000 A 673 C2 transistor 2n7000 Lk53
Contextual Info: Philips Components 2N7000 Data sheet status Product specification date o f Issue October 1990 N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES • Low R 0S on SYMBOL • Direct interface to C-MOS, TTL, etc. Vos drain-source voltage

rp110n261

Abstract: RP110L161D RP110N151B RP110N081B RP110N141C RP110N171D RP110L121C5
Contextual Info: RP110x SERIES 150mA Low Supply Current LDO REGULATOR NO.EA-239-131023 OUTLINE The RP110x Series is a voltage regulator LDO IC, which has been developed using the CMOS process technology, with high output voltage accuracy, ultra-low supply current, and low ON-resistance transistor. The IC

IF3602

Abstract: transistor b35 B-35 transistor NJ3600L 03nv B35 equivalent
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-35 B-35 01/99 IF3602 Dual N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier Absolute maximum ratings = TA at 25¡C Reverse Gate Source Voltage & Gate Drain Voltage Continuous Forward Gate Current

ceramic capacitor philips 561

Abstract: AI mm sot 553 BLV98CE IEC134 transistor k 117 GR
Contextual Info: N AMER PHILIPS/DISCRE TE bTE J> >hiliDs Semiconductors BLV98CE Data sheet status Product specification date of issue March 1 9 9 3 bbS3T31 ODe^lflD 2flG * A P X UHF power transistor FEATURES QUICK REFERENCE DATA • Internal input matching to achieve high power gain

Contextual Info: Philips Sem iconductors bt.S3R31 O O E ^ m HT5 W A P X P roduct spe cifica tion VHF power MOS transistor BLF225 — N AUER PHILIPS/DISCRETE FEATURES blE » PIN CONFIGURATION • Easy power control • Good thermal stability • Withstands full load mismatch.

CD860

Abstract: IFN860 NJ3600L IF3602 IFN5911 IFN5912
Contextual Info: Databook.fxp 1/14/99 11:32 AM Page B-47 B-47 01/99 IFN5911, IFN5912 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Wideband Differential Amplifiers Continuous Forward Gate Current Continuous Device Power Dissipation