4367 Search Results
4367 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 4367 | Adafruit Industries | CIRCUIT PLAYGROUND TFT GIZMO | Original | 1.17MB | |||
| 43678 | Weinschel | GPO Fixed Coaxial Attenuator | Original | 131KB | 1 | ||
| 43679 | Weinschel | GPO Fixed Coaxial Attenuator | Original | 131KB | 1 |
4367 Price and Stock
EECO Switch 234367-03Twl - 16P - 50-Or - Mkd 0-15. |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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234367-03 | 500 |
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TE Connectivity 814367-000202D132-4-0 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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814367-000 | 132 |
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814367-000 | 88 |
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814367-000 | 18 Weeks | 88 |
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| 814367-000 | 16 Weeks | 175 |
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TE Connectivity 584367-000222A111-25/225-0 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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584367-000 | 6 |
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584367-000 | 10 | 3 |
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584367-000 | 61 Weeks | 200 |
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Sensata Circuit Breakers LMLB1-1RLS4-36789-20-VCir Brkr Hyd Mag |
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LMLB1-1RLS4-36789-20-V |
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LMLB1-1RLS4-36789-20-V | 1 |
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Sensata Circuit Breakers LMLB1-1RLS4-36789-25-VCircuit Breakers Cir Brkr Hyd Mag |
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LMLB1-1RLS4-36789-25-V |
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LMLB1-1RLS4-36789-25-V | 1 |
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4367 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Module no:3024083 LabelId:3024083 Operator:Phoenix 18:58:02, Donnerstag, 28. Juni 2001 ZFKKB 4 Terminal width 6.2 IEC rigid solid 2 [mm ] flexible stranded AWG I U [A] [V] IEC 947-7-1 0.5-6 0.5-4 20-10 32 500 EN 50 019 * 0.5-4 0.5-4 – 27 500 * Certification: KEMA Ex-96.D.4367U |
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ex-964367u | |
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Contextual Info: 12.9 kV SiC PiN diodes with low on-state drops and high carrier lifetimes Siddarth Sundaresana, Charles Sturdevant, Madhuri Marripelly, Eric Lieser and Ranbir Singh GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA. a siddarth.sundaresan@genesicsemi.com, *corresponding author |
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dear0000112 | |
HL941
Abstract: LC73860 3001C ILC02659 ILC02660 ILC02661 ILC02662 dtmf 4.194304-mhz
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lc73860300mil3001c51min+9 | |
4367
Abstract: LC73860 EN4367
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OCR Scan |
en4367lc7386016-dtmf3001b-dip8+1 | |
RT1N241M
Abstract: 2sc3246 2SC4159 4392 DTC143ES 2SC3296 2sc3374 DTC114EU 2sc4368 DTC144EU
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OCR Scan |
2sd16232sc28732sc3458n221f+16 | |
1N8024-GA SPICEContextual Info: 1N8024-GA SPICE Model Parameters Copy this code from the SPICE model into a SPICE software program for simulation of the 1N8024-GA. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 |
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1n8024-ga05-sep-20131n8024temp-24+2 | |
1N8031-GA SPICE
Abstract: PIN diode SPICE model
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1n8031-ga05-sep-20131n803157e-18+2 | |
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Contextual Info: Rapidly Maturing SiC Junction Transistors Featuring Current Gain β > 130, Blocking Voltages Up To 2700 V and Stable Long-Term Operation S.G. Sundaresan, S. Jeliazkov, B. Grummel, R. Singh GeneSiC Semiconductor, Inc. 43670 Trade Center Pl, Suite 155, Dulles, VA 20166, USA |
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1N8034-GA SPICEContextual Info: 1N8034-GA SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the 1N8034-GA device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 |
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1n8034-ga05-sep-20131n803446e-17+3 | |
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Contextual Info: 1200 V-class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-fast Switching capability Ranbir Singha,*, Stoyan Jeliazkov and Eric Lieser GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA. a ranbir.singh@genesicsemi.com, *corresponding author |
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n00014-c-10-0104 | |
led rgb amplifier
Abstract: abstract led digital display board Luminus Driver max16821 LED led rgb amplifier circuit pwm rgb led driver Luminus pwm luminus datasheet APP4367 MAX16821
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max16821com/an4367an4367app4367+9 | |
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Contextual Info: LJT — accessories strain relief solder type L BB GG Y B * 10-436792-XXX For military type cable clamp see MS27506 or M85049/49 on page 28. * To complete order number, add shell size and suffix number. 10-Number Suffix Finish Chromate treat -XX0 Anodic coating |
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10-436792-xxxms27506m85049/4910-number | |
MSK4367HContextual Info: MIL-PRF-38534 CERTIFIED FACILITY M.S.KENNEDY CORP. 10 AMP, 38V, 3 PHASE MOSFET DC BRUSHLESS DIGITAL MOTOR CONTROLLER 4367 315 701-6751 4707 Dey Road Liverpool, N.Y. 13088 FEATURES: 38 Volt Maximum Operating Supply Voltage 55 Volt Absolute Maximum Output Switch Capability |
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mil-prf-38534mil-prf-38msk4367msk4367h | |
PC BASED DC MOTOR SPEED CONTROLLERContextual Info: MIL-PRF-38534 CERTIFIED FACILITY M.S.KENNEDY CORP. 10 AMP, 38V, 3 PHASE MOSFET DC BRUSHLESS DIGITAL MOTOR CONTROLLER 4367 315 701-6751 4707 Dey Road Liverpool, N.Y. 13088 FEATURES: 38 Volt Maximum Operating Supply Voltage 55 Volt Absolute Maximum Output Switch Capability |
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mil-prf-38534mil-prf-38msk4367msk4367h+1 | |
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anode gate thyristorContextual Info: Integrated SiC Anode Switched Thyristor Modules for Smart-Grid Applications Siddarth G. Sundaresana*, Eric Lieser and Ranbir Singh GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA. a siddarth.sundaresan@genesicsemi.com, *corresponding author |
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5x10141x107dear0000112anode gate thyristor | |
1N8028-GA SPICEContextual Info: 1N8028-GA SPICE Model Parameters Copy this code from the SPICE model into a SPICE software program for simulation of the 1N8028-GA. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 |
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1n8028-ga05-sep-20131n802874e-13+1 | |
GA01PNS100-CAL SPICEContextual Info: GA01PNS100-CAL SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the GA01PNS100-CAL device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 |
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ga01pns100-cal05-sep-2013ga01pns10000e-25+3 | |
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Contextual Info: LJT — accessories strain relief solder type * 10-436792-XXX For military type cable clamp see MS27506 or M85049/49. on page 28. *To complete order number, add shell size and suffix number. 10-Number Suffix Finish Chromate treat -XX0 Anodic coating -XX5 |
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10-436792-xxxms27506m85049/4910-number+1 | |
GA01PNS100-CAU SPICEContextual Info: GA01PNS100-CAU SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the GA01PNS100-CAU device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 |
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ga01pns100-cau05-sep-2013ga01pns100-calga01pns100+4 | |
1N8035-GA SPICEContextual Info: 1N8035-GA SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the 1N8035-GA device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 |
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1n8035-ga05-sep-20131n803546e-17+3 | |
1N8030-GA SPICEContextual Info: 1N8030-GA SPICE Model Parameters Copy this code from the SPICE model into a SPICE software program for simulation of the 1N8030-GA. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 |
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1n8030-ga05-sep-20131n803057e-18+1 | |
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Contextual Info: Silicon Carbide Junction Transistors and Schottky Rectifiers optimized for 250°C operation Siddarth Sundaresan, Brian Grummel and Ranbir Singh GeneSiC Semiconductor, 43670 Trade Center Place, Suite 155, Dulles VA 20166, U.S.A. ABSTRACT Electrical performance and reliability of SiC Junction Transistors SJTs and Schottky |
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Contextual Info: MIL-PRF-38534 AND 38535 CERTIFIED FACILITY M.S.KENNEDY CORP. 10 AMP, 38V, 3 PHASE MOSFET DC BRUSHLESS DIGITAL MOTOR CONTROLLER 4367 315 701-6751 4707 Dey Road Liverpool, N.Y. 13088 FEATURES: 38 Volt Maximum Operating Supply Voltage 55 Volt Absolute Maximum Output Switch Capability |
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mil-prf-38534msk4367msk4367h | |
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Contextual Info: 1200 V SiC Schottky Rectifiers optimized for ≥ 250 °C operation with low junction capacitance Ranbir Singh* and Siddarth Sundaresan GeneSiC Semiconductor Inc. 43670 Trade Center Place; Suite 155 Dulles, VA. USA *Ranbir@ieee.org Abstract— Electrical Characteristics of Industry’s first |
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