DEAR0000112 Search Results

MOS Controlled Thyristor

Abstract: thyristor lifetime
Contextual Info: Static and Switching Characteristics of 6500 V Silicon Carbide Anode Switched Thyristor Modules Siddarth Sundaresan, Aye-Mya Soe, Ranbir Singh GeneSiC Semiconductor Inc. Dulles, VA 20152, USA Abstract— Silicon Carbide Anode Switched Thyristors ASTs overcome major limitations of conventional Si and SiC IGBT

Contextual Info: 12.9 kV SiC PiN diodes with low on-state drops and high carrier lifetimes Siddarth Sundaresana, Charles Sturdevant, Madhuri Marripelly, Eric Lieser and Ranbir Singh GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA. a siddarth.sundaresan@genesicsemi.com, *corresponding author

anode gate thyristor

Contextual Info: Integrated SiC Anode Switched Thyristor Modules for Smart-Grid Applications Siddarth G. Sundaresana*, Eric Lieser and Ranbir Singh GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA. a siddarth.sundaresan@genesicsemi.com, *corresponding author

Contextual Info: 15 kV SiC PiN diodes achieve 95% of avalanche limit and stable long-term operation Siddarth Sundaresan, Madhuri Marripelly, Svetlana Arshavsky, Ranbir Singh GeneSiC Semiconductor Inc. Dulles, VA 20166, USA email: siddarth.sundaresan@genesicsemi.com Abstract— This paper reports on ultra-high voltage, >15 kV SiC