TRANSISTOR 1A5 Search Results

ic an 7591

Abstract: ic 7483 023243 TRANSISTOR 1a5 7483 IC an 7591 44222 63-8687 74718 5310
Contextual Info: 1A5/1A5A 0.5 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 1A5/1A5A is a COMMON EMITTER transistor capable of providing 0.5 Watt of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MG1007-42

Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

H11A520-H11A550

Abstract: H11A51 H11A5100 H11A520 H11A550 HUA550
Contextual Info: S OL I D STATE D1 DE I 3 Ö7 SDÖ1 0 0 1 ^ 4 7 Optoelectronic Specifications - T - m - s z Photon Coupled Isolator H11A520-H11A550 -H11A5100 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor T h e G E Solid State H 11A520, H11A550 and H I 1A5100 consist o f a

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

b12 7d diode

Contextual Info: IPB034N06N3 G Id\Q "%&$!"# 3 Power-Transistor Product Summary Features P 6? ABH>3 A53 C96931C9? > =? C? A 4A9E5B1>4 43 43 , & , P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H .( J R 9H"[Z#$YMc +&, Y" I9 )( 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z#

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

da5 diode

Abstract: BC519 IPB048N06L IPP048N06L DA QG marking 1bc
Contextual Info: IPP048N06L G IPB048N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5<  E5AB9 ?> I9 .( J ,&, Y" ( 6 P   S ? @5A1C

BC519

Abstract: 81a diode
Contextual Info: IPB070N06N G IPP070N06N G IPI070N06N G "%&$!"# Power-Transistor Product Summary Features V 9H P & ? F 71C 5 3 81A75 6? A61BCBF9C 3 89 >7 1@@<9 3 1C 9? >B R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C >? A=1<<5E5<  E5AB9 ?> I9 .( J .&/ Y" 0( 6 P   S ? @5A1C

Diode Marking C.3

Abstract: da5 diode DA5 marking 5411C
Contextual Info: IPB070N06L G IPP070N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5<  E5AB9 ?> I9 .( J .&/ Y" 0( 6 P   S ? @5A1C

B1C DIODE

Abstract: IPB039N10N3 marking 1c marking a5 4r diode
Contextual Info: IPB039N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H ( J R 9H"[Z#$YMc +&1 Y" I9 ).( 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH

DA5 diode

Contextual Info: IPB110N06L G IPP110N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5<  E5AB9 ?> I9 .( J Y" /0 6 P   S ? @5A1C

65a3

Abstract: be5a IPB025N10N3G V9910 95E-9
Contextual Info: IPB025N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H ( J R 9H"[Z#$YMc *&- Y" I9 )0( 6 P GCA5=5<H <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH

IPB025N10N3

Abstract: IPB025 b1c diode marking a5 4r diode marking a5 4r diode b1c
Contextual Info: IPB025N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H ( J R 9H"[Z#$YMc *&- Y" I9 )0( 6 P GCA5=5<H <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH

Contextual Info: IPB090N06N3 G IPP093N06N3 G Id\Q  3 Power-Transistor Product Summary Features P฀6?A฀BH>3 ฀A53C96931C9?>฀4A9E5B฀1>4฀43 43฀,& , P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ & V 9H .( J R ,?>=1G฀,& 1 Y I9 -(

Contextual Info: IPB037N06N3 G Id\Q IPI040N06N3 G IPP040N06N3 G  3 Power-Transistor Product Summary Features V 9H . J P฀6?A฀BH>3 ฀A53C96931C9?>฀4A9E5B฀1>4฀43 43฀,& , R ,?>=1G฀,& +&/ Y P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ (&

DA QG

Contextual Info: IPB065N06L G IPP065N06L G "%&$!"# Power-Transistor Product Summary Features P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< V 9H .( J R  , ? >=1G .&- Y" I9 0( 6 P   S ? @5A1C 9>7 C 5=@5A1C

IPP093N06N3G

Contextual Info: IPB090N06N3 G IPP093N06N3 G Id\Q "%&$!"# 3 Power-Transistor Product Summary Features V 9H P 6? ABH>3 A53 C96931C9? > 4A9E5B1>4 43 43 ,& , R  , ? >=1G, & P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &    I9 .( J 1 Y" -( 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z#

5411C

Abstract: da5 diode BC519 58a4
Contextual Info: IPB080N06N G IPP080N06N G "%&$!"# Power-Transistor Product Summary Features V 9H P & ? F 71C 5 3 81A75 6? A61BCBF9C 3 89 >7 1@@<9 3 1C 9? >B R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C >? A=1<<5E5<  E5AB9 ?> I9 .( J /&/ Y" 0( 6 P   S ? @5A1C 9>7 C

IPB085N06L

Abstract: da5 diode marking 4rt IPB085N06L G
Contextual Info: IPB085N06L G IPP085N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5<  E5AB9 ?> I9 .( J 0&* Y" 0( 6 P   S ? @5A1C