TRANSISTOR 13N50 Search Results

8140115

Abstract: 8140 SOURIAU BLF7G20LS-250P Souriau 23N-50 8140 800B RF35 BLF7G
Contextual Info: BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor Rev. 2 — 9 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1.

13N50

Abstract: 8140115 nxp marking code M2
Contextual Info: BLF6G15L-250PBRN Power LDMOS transistor Rev. 1 — 14 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance

3590S-491-103

Abstract: 23n50 13N50
Contextual Info: BLF6G15L-40BRN Power LDMOS transistor Rev. 1 — 14 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance

23N50

Contextual Info: BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 1 — 12 August 2010 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance

Contextual Info: BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 2 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance

8140 SOURIAU

Abstract: BLF6G10LS BLF6G10LS-260 1800 ldmos 800B 8140115
Contextual Info: BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 1 — 12 August 2010 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance

BLS2933-100

Abstract: T491D475K050AS Duroid 6006 NV SMD TRANSISTOR 13N-50-057 23N-50-057
Contextual Info: BLS2933-100 Microwave power LDMOS transistor Rev. 01 — 1 August 2006 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor at a supply voltage of 32 V for S-band radar applications in the 2.9 GHz to 3.3 GHz frequency range.

810 souriau

Abstract: ATC100B RO4350 souriau 810
Contextual Info: BLF6G10L-40BRN Power LDMOS transistor Rev. 01 — 9 August 2010 Preliminary data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

MTH13N50

Abstract: 3N50 motorola MTH13N50 13N50 MTH15N40 MTH13N45 transistor 13n50 5N35 MTM4N35 DS3651
Contextual Info: P.O. BOX 20912 • PHOENIX, ARIZONA 85036 MTH13N45 MTH13N50 MTH15N35 MTH15N40 D esign er’s D ata Sheet 13 and 15 AMPERES N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR N-CHANNEL TMOS POWER FETs These TMOS Power FETs are designed for medium voltage,

transistor 12n60c

Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Contextual Info: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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