TR C 2690 Search Results

117L7

Abstract: 2e22 6JV6 6BM8 12EC8 6au5gt 6HF5 6GH8A 6HB5 12U7
Contextual Info: TUNS-SOL TECHNICAL DATA TUNG-SOL ELECTRON TUBES TUNG-SOL ELECTRIC INC. ELEC TR O N T U B E DIVISIO N NEW ARK, N. }. U. S. A. PL ATE 275r OCT. 1 1951 C O P Y R IG H T 1 9 0 1 BY T U N O - S O L E L EC TR IC IN C . E L E C T R O N IC T U B E D IV ISIO N N E W A R K . N E W J E R S E Y . U . S. A.

3031B

Abstract: KS 2152
Contextual Info: DEVICE SPECIFICATION E 4/S TM -1/O C -3 ATM TR AN SC EIVER • • • • • • • • • • • • Complies with ANSI, Bellcore, and ITU-T specifications On-chip high-frequency PLLs for clock generation and clock recovery On-chip analog circuitry for transformer

Contextual Info: DESCRIPTION FEATURES The 2690 is fabricated with double-poly nchannel silicon gate technology for high performance and high functional density. It uses a single transistor dynamic storage cell and dynamic circuitry to achieve high speed and low power dissipation.

Trac12

Abstract: AC12 DH16 DS16 WCS17 ice power 200 asc
Contextual Info: O B JE C T IV E S P E C IF IC A T IO N 2690-2— F ,I,N • 2690-3— F ,I,N • 2690-4— F,I,N D E S C R I P T IO N FEATU RES The 2690 is fab ricate d w ith d o u b le -p o ly nchannel s ilic o n gate te c h n o lo g y fo r high perform ance and hig h fu n c tio n a l d e nsity. It

DCR2690L22

Abstract: DCR2690L DCR2860L22
Contextual Info: DCR2690L22 Phase Control Thyristor Preliminary Information DS5890-1.1 September 2007 LN25533 KEY PARAMETERS FEATURES Double Side Cooling VDRM IT(AV) ITSM dV/dt* dI/dt High Surge Capability APPLICATIONS 2200V 2690A 38000A 1500V/µs 300A/µs * Higher dV/dt selections available

263640

Abstract: 74264 B57560G0103F000 164 20 8525 533390 70216 820810 EPCOS 1786 B57560G0202 B57560G0104F000
Contextual Info: NTC thermistors for temperature measurement Glass-encapsulated sensors, standard type Series/Type: Date: B57560 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

B57550G0103F000

Abstract: 13844 B57550G0104H000 B57550G0202G000 B57550G0202F000 263640 33260 B57550 B57550G0103J000 533390
Contextual Info: NTC thermistors for temperature measurement Glass-encapsulated sensors, standard type Series/Type: Date: B57550 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

epcos 565-2

Abstract: B57540G0103F000 B57540G0104F000 565-2 EPCOS EPCOS B25 160 131850 263640 EPCOS b57540 B57540G0502F000 10311
Contextual Info: NTC thermistors for temperature measurement Glass-encapsulated sensors, standard type Series/Type: Date: B57540 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

Rm73B1E

Abstract: RM73 RM73B2A RM73B2H RM73B3A RM73B2B RN73E2A koa RM73 RM73B2E KOA Speer Electronics RM73B1
Contextual Info: K O FLAT CHIP RESISTORS a\ SPEER ELECTRONICS, INC. DESCRIPTION OF CHIP RESISTORS - Seven 7 Available Sizes - 0402, 0603, 0805 1206, 1210, 2010, 2512 - 1/16 W att to 1 W att Power Ratings - 0.1 Ohm to 22 Meg Ohm Resistance Range - Tight Tolerance and Low TCR Available

NTC 4,7 1235 Thermistors EPCOS

Abstract: K164 B57164K0103J000 icl 7103 B57164K0682k000 B57164K0104J000 38957 ICL 7108 NTC 1000-9 18526
Contextual Info: NTC thermistors for temperature measurement Leaded NTCs, lead spacing 5 mm Series/Type: Date: B57164 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

fototransistor

Abstract: SW10 diode PHOTO TRANSISTOR 940nm
Contextual Info: Indicator Sensors Ø5mm Metal Holders Allgemeine Hinweise und Technische Daten Allgemeine Hinweise und technische Daten: siehe Seite 4 General Remarks and Technical Data General remarks and technical data: see page 4 Spezifische Technische Daten Gehäusewerkstoff: CuZn verchromt

SW10 diode

Abstract: Fototransistor
Contextual Info: Indicator Sensors Ø5 mm Metal Holders Allgemeine Hinweise und Technische Daten Allgemeine Hinweise und technische Daten: siehe Seite 4 General Remarks and Technical Data General remarks and technical data: see page 4 Spezifische Technische Daten Gehäusewerkstoff: CuZn verchromt

2SK2225

Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
Contextual Info: CONTENTS • Index. 4 ■ General Information.

photonic crystal fiber

Abstract: SDM4123-XC
Contextual Info: DEVICE SPECIFICATION S O N E T /S D H /A TM OC-3 TR A N S M ITTE R AN D RECEIVER FEATURES • Complies with ANSI, Bellcore, and ITU-T specifications • On-chip high-frequency PLL for clock generation and clock recovery • Supports 155.52 Mbit/s OC-3 • Reference frequency of 19.44 MHz

flip-flop 948

Abstract: 5252 f 1101 SN74AS8840 CNTR11-CNTR8 Zeus Component AS8832
Contextual Info: SN74AS8840. Digital Crossbar Switch • High-speed programmable switch for parallel processing applications • Dynam ically reconfigurable for fault-tolerant routing • 64 bidirectional data I/O s in 16 nibble four-bit groups • D ata I/O selection programmable by nibble

hitachi j50

Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

Contextual Info: PD - 96237 IRFB3004GPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt

IRFB3004GPBF

Contextual Info: PD - 96237 IRFB3004GPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt

RM73B1J

Abstract: 104021
Contextual Info: KOA FLAT CHIP RESISTORS SPEER ELECTRONICS, INC. DESCRIPTION OF CHIP RESISTORS - Seven 7 Available Sizes - 0402, 0603, 0805 1206, 1210, 2010, 2512 - 1/16 Watt to 1 Watt Power Ratings - 0.1 Ohm to 22 Meg Ohm Resistance Range - Tight Tolerance and Low TCR Available

VNQ5027AK-E

Abstract: vnq5027ake VNQ5027
Contextual Info: VNQ5027AK-E Quad channel high side driver with analog current sense for automotive applications Features Type VCC RDS on ILIMH VNQ5027AK-E 41V 27mΩ(1) 42A PowerSSO-24TM 1. Per channel • Output current: 42A ■ 3.0V CMOS compatible input ■ Current sense disable

SANMOTION ALARM CODE

Abstract: Sanyo Denki p50 servo SANMOTION Q error code SANMOTION R error code Q1AA06040 RA062 sanyo denki resolver sanyo denki sanmotion QS SANMOTION Q sanyo denki P50 QS1A10
Contextual Info: AC SERVO SYSTEMS Q Vol. 3 English Save installation time and expense Economical ĠSmaller profile, less wiring time needed Quick Setup ĠNo adjustment needed; complete with measurement functions and setup software Improved precision and speed Stability ĠĠĠĠDoubled from earlier models

Contextual Info: > “££ 5i3fiiK>:P-/ai§ O^C>©r33> ;MM _l_ a DWG. NO. DO NOT SCALE DRAWING SD-53264-* 10 ±0. z?D(j ©o O IN cn UD © © CO © © © -0 © © © © © © JG cn © © CO © © © © CO © cO CO CO cO © ~n m ca 3ocn> > >• © ©

Hitachi DSA002780

Contextual Info: 2SK1934 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on–resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline TO-3P D 1 G 2 S 3 1. Gate 2. Drain Flange 3. Source