TOSHIBA MG300J2YS50 Search Results

TOSHIBA MG300J2YS50

Abstract: L20A MG300J2YS50 TRANSISTOR BJ 040
Contextual Info: TOSHIBA MG300J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300J2 YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package. Enhancement-Mode

MG75J2YS40

Abstract: MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45
Contextual Info: Insulated Gate Bipolar Transistors IGBTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a

GT250101

Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a

TOSHIBA MG300J2YS50

Abstract: mg300j2ys50 2-109C1A
Contextual Info: MG300J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300J2YS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode

mg300j2ys50

Contextual Info: MG300J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300J2YS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode

mg300* toshiba

Abstract: MG300J2YS50 300AVGE TOSHIBA MG300J2YS50
Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG300J2YS50 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: • • • • tf = 0.30µs Max. (IC = 300A)

TOSHIBA MG300J2YS50

Abstract: MG300J2YS50 mg300* toshiba
Contextual Info: MG300J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300J2YS50 Unit: mm High Power Switching Applications Motor Control Applications l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode

Contextual Info: T O SH IB A MG300J2YS50 MG300 J 2 YS 5 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

LT 1000-TI

Contextual Info: T O SH IB A MG300J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300 J 2Y S 50 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

G50Q2YS40

Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
Contextual Info: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101

Contextual Info: TOSHIBA MG300J2YS50 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT MG300J2 YS50 HIGH P O W E R SW ITCHIN G APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • • • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete H alf Bridge in One

Contextual Info: TOSHIBA MG300J2YS50 TO SH IBA GTR M O D U LE M f i ? n n SILICON N CH AN N EL IGBT n Y < ; R n HIGH PO W ER SW ITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

IGBT cross reference semikron eupec

Abstract: IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40
Contextual Info: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130

IGBT cross reference semikron eupec

Abstract: 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40
Contextual Info: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130