MG300 Search Results

Contextual Info: MG300J1US51 H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S. M O T O R C O N T R O L A P P L IC A T IO N S. • • • • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package. Enhancement-Mode

300Q1US41

Contextual Info: TOSHIBA MG300Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q1US41 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5i«s Max. trr = O.S^s (Max.) Low Saturation Voltage : V cE (sa t) = 4.0V

Tag 676 800

Contextual Info: TOSHIBA MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300 2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • H ig h I n p u t Im p ed an ce • H ig h S p eed : t f = 0 .3 / / s M ax. •In d u c tiv e L oad •

MG300H1FL1

Abstract: Diode 864
Contextual Info: G TR MODULE MG300H1FL1 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 2-M 6 FEATURES: / 4- 0& 5± O. 3 YJjtj . The Collector is Isolated from Case. yPi. Bl BX . With Built-in Free Wheeling Diode . High DC Current Gain : hFE=80 Min. (Ic=300A)

Contextual Info: T O S H IB A MG300Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS40 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed EQUIVALENT CIRCUIT : tf = 0.5^s Max. trr = 0.5,«s (Max.) V cE (sat) = 4.0V (Max.)

MG300M1UK2

Contextual Info: MG300M1UK2 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode. . High DC Current Gain: hpj?=80 Min. (Ic=300A) . Low Saturation Voltage

Contextual Info: T O SH IB A MG300J2YS50 MG300 J 2 YS 5 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

MG300Q2YS50

Abstract: 300AT
Contextual Info: TOSHIBA MG300Q2YS50 TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG300Q2 YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • High Input Impedance High Speed : tf=0.3/*s Max. Inductive Load Low Saturation Voltage

MG300M1FK1

Abstract: DIODE S3L DIODE TP S3L
Contextual Info: T O SH IB A TOSHIBA GTR MODULE SEMICONDUCTOR MG300M1FK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 2-M6 FEATURES: . The Collector is Isolated from Case . With Built-in Free Wheeling Diode

MG300Q1US51

Abstract: MG300Q1
Contextual Info: T O S H IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3^s Max. @Induetive Load Low Saturation Voltage : VCE (Sat) =3.6V (Max.)

Contextual Info: TOSHIBA MG300J1US51 M G 3 0 0 J 1 US51 TO SH IBA GTR M O DULE SILICON N CHANNEL IGBT HIGH P O W E R SW ITCHIN G APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

MG300Q1US41

Contextual Info: MG300Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US41 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs Max. trr = 0.5µs (Max.) Low saturation voltage : VCE(sat) = 4.0V (Max.)

Contextual Info: MG300Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode

MG300Q2YS61

Abstract: toshiba G2 MG300Q2YS
Contextual Info: MG300Q2YS61 TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS61 High Power Switching Applications Motor Control Applications • High input impedance · High speed: tf = 0.3 µs max Unit: mm Inductive load · Low saturation voltage: VCE (sat) = 2.6 V (max)

MG300J1US51

Contextual Info: MG300J1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300J1US51 Unit: mm High Power Switching Applications Motor Control Applications l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode

Contextual Info: TOSHIBA MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 Q Q n 1 u S 51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 ^ s Max. Inductive Load • Low Saturation Voltage • V c e (sat) —3.6V (Max.)

MG300N1US1

Abstract: w531
Contextual Info: GTR MODULL SILICON N CHANNEL IGBT MG300N1US1 HIGH P O WER S W I T C H I N G APPLICATIONS. Unit M O T O R C O N T R O L A P PLICATIONS. in 20±0.5 . High Input 24±0.5 Impedance . H i g h S peed 4-^6.5±0.3 : t f = l .0/is M a x . t rr= 0- 5 n s ( M a x .)

MG300J1US1

Abstract: 1030rg
Contextual Info: GTR MODULE SILICON N CHANNEL IGBT MG300J1US1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed : tf= 0. 35/is Max. trr=0. 25tis(Max.) . Low Saturation Voltage : VCEi(sat)=4.0V(Hax.) . Enhancement-?tode

Contextual Info: TOSHIBA MG300Q1US51 TO SH IBA GTR M O D U L E M G 3 SILICON N C H A N N EL IGBT Q 1 U S 5 1 HIGH POW ER SW ITCHING APPLICATIONS M O T O R CONTRO L APPLICATIONS • • H igh Input Impedance H ig h sp eed : tf= 0 .3 /Æ Max. Inductive Load Low Saturation Voltage

mg30

Abstract: MG300Q1US51 P channel 600v 300a IGBT
Contextual Info: T O S H IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.)

Contextual Info: T O S H IB A MG300Q2YS50 TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed : tf= 0 .3 /«s Max. Inductive Load • Low Saturation Voltage

TOSHIBA MG300J2YS50

Abstract: MG300J2YS50 mg300* toshiba
Contextual Info: MG300J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300J2YS50 Unit: mm High Power Switching Applications Motor Control Applications l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode

MG300Q2YS65H

Contextual Info: MG300Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS65H High Power & High Speed Switching Applications • High input impedance • Enhancement-mode • The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2

mg300j2ys50

Contextual Info: MG300J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300J2YS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode