MG30 Search Results

MG30G2YM1

Abstract: LD30A
Contextual Info: GTR MODULE SILICON N CHANNEL MOS TYPE MG30G2YM1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance

Contextual Info: MG300J1US51 H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S. M O T O R C O N T R O L A P P L IC A T IO N S. • • • • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package. Enhancement-Mode

300Q1US41

Contextual Info: TOSHIBA MG300Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q1US41 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5i«s Max. trr = O.S^s (Max.) Low Saturation Voltage : V cE (sa t) = 4.0V

MG30G6EL1

Abstract: transistor 30A 600v tf s 544 a
Contextual Info: QTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG30G6EL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diodes.

MG30G1BL3

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG30G1BL3 HIGH POWER SWITCHING APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . High DC Current Gain : hFE=100 Min. (Ic= 30A) . Low Saturation Voltage: VcE(sat)=2V(Max.)(Ic=30A) . High Speed : tf=2/js(Max.) (Ic=30A)

Tag 676 800

Contextual Info: TOSHIBA MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300 2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • H ig h I n p u t Im p ed an ce • H ig h S p eed : t f = 0 .3 / / s M ax. •In d u c tiv e L oad •

MG300H1FL1

Abstract: Diode 864
Contextual Info: G TR MODULE MG300H1FL1 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 2-M 6 FEATURES: / 4- 0& 5± O. 3 YJjtj . The Collector is Isolated from Case. yPi. Bl BX . With Built-in Free Wheeling Diode . High DC Current Gain : hFE=80 Min. (Ic=300A)

MG30H1BL1

Abstract: S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 MG150H1FL1 A1015 MG50G6EL9 MG150H2YL1
Contextual Info: R egulator T ransisto rs Bipolar Darlington 1 O ro* Connection V ceo (SUS) (V) Maximum Rating ic<A) 15 10 20 2SD1314* 30 50 75 100 150 200 300 400 MG30Û1BL3 MG50G1BL3 450 <D BL MG30G18L4 MG30H1BL1 550 MG1SG1AL3 450 AL MG100G1AL3 MG15H1AL1 550 S3885* FL

Contextual Info: T O S H IB A MG300Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS40 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed EQUIVALENT CIRCUIT : tf = 0.5^s Max. trr = 0.5,«s (Max.) V cE (sat) = 4.0V (Max.)

GW50

Contextual Info: MG30H2DM1 MG30H2YM1 GTR MODULE SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING A P P L I C A T I O N S . MOTOR CONTROL A P P L I C A T I O N S . • The Drain is Isolated from Case. • 2 MOS FETs are Built-in to 1 Package. • With Built-in Free Wieeling Diode .:

MG300M1UK2

Contextual Info: MG300M1UK2 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode. . High DC Current Gain: hpj?=80 Min. (Ic=300A) . Low Saturation Voltage

Contextual Info: GTR MODULE SILICON N CHANNEL MOS TYPE MG30D2DM1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance

MG30G6EL1

Abstract: mg30g6
Contextual Info: MG30G6EL1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH P O W ER SWIT C HI N G A PPLICATIONS. M OT O R CONTROL APPLICATIONS. FE ATURES: . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diodes.

mg30j6es50

Contextual Info: T O SH IB A MG30J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG30J6ES50 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • 14-FAST-ON-TAB #110 The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.

Contextual Info: — aSSSfwus o,FFusEpTYPE— MG30G6EL9 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. . The Collector is Isolation from Case. . 6 Power Transistors and 6 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain : hpE=100 Min. (Ic=30A)

Contextual Info: TOSHIBA MG30V2YS40 TO SH IBA GTR M O DU LE SILICON N CHANNEL IGBT MG30V2YS40 HIGH PO W E R SWITCHING APPLICATIONS M OTOR CONTROL APPLICATIONS The Electrodes are Isolated from Case. H igh Input Impedance Includes a Complete H alf Bridge in One Package. Enhancement-Mode

Contextual Info: T O SH IB A MG300J2YS50 MG300 J 2 YS 5 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

MG300Q2YS50

Abstract: 300AT
Contextual Info: TOSHIBA MG300Q2YS50 TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG300Q2 YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • High Input Impedance High Speed : tf=0.3/*s Max. Inductive Load Low Saturation Voltage

Contextual Info: TOSHIBA MG30J6ES50 TOSHIBA GTR M O D U LE SILICON N C HANN EL IGBT M G 3 G J6 E S 5 G HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS The Electrodes are Isolated from Case. High Input Impedance. 6 lOBTs Built Into 1 Package, Enhancement- Mode.

MG300M1FK1

Abstract: DIODE S3L DIODE TP S3L
Contextual Info: T O SH IB A TOSHIBA GTR MODULE SEMICONDUCTOR MG300M1FK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 2-M6 FEATURES: . The Collector is Isolated from Case . With Built-in Free Wheeling Diode

MG300Q1US51

Abstract: MG300Q1
Contextual Info: T O S H IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3^s Max. @Induetive Load Low Saturation Voltage : VCE (Sat) =3.6V (Max.)

Contextual Info: TOSHIBA MG300J1US51 M G 3 0 0 J 1 US51 TO SH IBA GTR M O DULE SILICON N CHANNEL IGBT HIGH P O W E R SW ITCHIN G APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

MG30G2YL1

Contextual Info: MG30G2YL1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain: hpE=100 Min. (1^=3

MG300Q1US41

Contextual Info: MG300Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US41 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs Max. trr = 0.5µs (Max.) Low saturation voltage : VCE(sat) = 4.0V (Max.)