TO92 92 94 Search Results

ST3904

Abstract: NS3903 TIS92 2N2926 NS3904 2n2926 ses 2N915 MPQ3904 2N3694 2N2712
Contextual Info: NPN Transistors Case Style Vcbo V Min vCEO (V) Min Vebo (V) Min 2N2712 TO-92 (94) 1B 18 2N2714 TO-92 (94) 18 2N2923 TO-92 (94) 2N2924 VCE(SAT) VBE(SAT) A m p lifie r s . C0b (PF) Max a n d S w itc h e s toff (ns) Max NF (dB) Max Test Conditions Process No.

PN544

Abstract: TI59 national 2N3859 2N2712 2N915 MPQ2222 MPQ6700 T1890 TN2219 PN101
Contextual Info: This NPN Transistors NATL @ . VCE SAT VBE(SAT) (V) (V) c Max Min Max v * C0b (PF) Max * ‘ off (ns) Max NF (dB) Max hFE Min Max 5 500 18 75 225 2 4.5 18 5 500 18 75 225 2 4.5 25 25 5 100 25 90 180 2 (1 kHz) 10 10 10 TO-92 (94) 25 25 5 100 25 150 300

NPN 2N3391A

Abstract: 2N3702 NATIONAL SEMICONDUCTOR PS6514
Contextual Info: N IMAIL SEPIICOND -[DISCRETE tflE D • b5D113Q Q03TSE3 b?t. ■ Devices Volts Min 25 (mA) Max Min Max 2N3391A 100 250 500 2N3392 100 150 300 NPN ra p fllA NF (dB) Max 2.0 120 Typ. 2.0 5.0 T0-92(94) 360 2.0 120 Typ. 2.0 TO-92(94) 360 120 Typ. 2.0 TO-92(94)

2n3663 national semiconductor

Contextual Info: Discrete POWER & Signal Technologies National Semiconductor" NPN RF Amplifiers and Oscillators V CEO V EBO *CBO Device No. Case Style ^C B O V Min (V) Min (V) Min MPS517 TO-92 (92) 20 12 2.5 2 MPSH10 TO-92 (96) 30 25 3 2N3663 TO-92 (94) 30 12 2N5770 TO-92

2n3391a

Contextual Info: NPN Transistors bSDllBD uctor Discrete POWER & Signal Technologies " NPN General Purpose Amplifiers and Switches OOHÜMbl 2fil I to Device No. Case Style 2N3390 VCBO V CEO ^EBO V Min (V) Min (V) Min TO-92 (94) 25 25 2N3391A TO-92 (94) 25 2N3392 TO-92 (94)

2N5306 NATIONAL SEMICONDUCTOR

Abstract: NSDU45 darlington transistor MPSw45 D40C2 D40K1 NSDU45A
Contextual Info: This NPN Transistors v EBO V Min Ic e s ' 'CBO a (jiA) Max Its Case Style 2N5305 TO-92 (94) 0.1 2N5306 TO-92 (94) 2N5307 *c @ VCE (mA) (V) VCE(SAT) VBE(SAT) . (V) & (V) 0 C Max Min Max ( ) fT (MHz) C0b (pF) Max Min @ lc (mA) Process No. 25 2000 20,000 2

BC286

Abstract: 2N3252 2n55s1 2N3304 CS1602B bc3206 MPS9680T BC2388 MPS9681T MPS901
Contextual Info: CRIMSON SE M IC ON DU CT OR INC TT DE | SSlMGTt DDDDET3 □ 2514096 C R I M S O N S EM IC O N D U C T O R INC 99D D 00293 T - 2 - 7 - ó / By.CEO BVCBO BVEBO ICBO @ VCB HFE @ VC & iC v COB Vi MiN IV1M.N . MN i-Al MAh (V MIN MA> .V (-*• i|l w»> FT V-'l

2n5248

Abstract: PF5101 2N5248 equivalent 2N5247 PN4857 PN4858 U1897 2N5245 PF5301-2 2N5460
Contextual Info: Discrete POWER & Signal Technologies N-Channel JFETs Switches / Choppers BVGSS BVGDO V @ IG µA) Min (µ IGSS *IDGO (nA) @ VDG Max (V) ID(off) V (nA) @ V DS GS Max (V) (V) VP ID (V) @ VDS (nA) Min Max (V) Device No. Case Style 2N5555 2N5638 2N5639 2N5640

2N5769

Abstract: MPS805 pN2369 national 2N3704 TN67 2n5306 2N4124 NPN 2N3391A 2N5210 national tn3725a
Contextual Info: Discrete POWER & Signal Technologies NPN Saturated Switches Device No. Case Style 2N5769 TO-92 92 PN2369 PN2369A PN4275 PN5134 TN3725A VCES* V VEBO VCBO CEO (V) (V) (V) Min Min Min 40 TO-92 (92) 40 TO-92 (92) 40 TO-92 (92) 40* TO-92 (92) 20* TO-226 (99)

transistors BC 543

Abstract: F245B BSR57M5 fmba0656 TJ309 f256c f245a PN5432 PN4857 2n 5459
Contextual Info: NPN Multiple Chip Transistors Device No. [Mark] MMPQ2369A Case Style SO-16 S3 V CBO V VCES* EBO (V) (V) Min (V) Min Min VCEO 15 40 4.5 I CBO ICES* (nA) Max 400 @ VCB (V) Min 20 40 40 30 20 h FE V CE 10 10 30 100 0.35 1 0.4 1 0.2 0.2 & @ Max (mA) (V) 120

D43C8

Contextual Info: Discrete POWER & Signal Technologies PNP Saturated Switches Device No. 2N5771 PN3640 PN4258 ST5771-1 TN3467A Case Style VCBO VCEO VEBO V Min (V) Min (V) Min TO-92 (92) 15 15 4.5 TO-92 (92) 12 TO-92 (92) 12 TO-92 (92) 15 TO-226 (99) 40 12 12 15 40 4 4.5 4.5

2N5133

Abstract: TIS92 2N4286 cm 45-12 MPS6566 transistor 2N2712 2N3707 2N3827 2N915
Contextual Info: NATL SENICOND 6 5 0 1130 NATL {D ISCRETE} SEMICOND, àfl <D I S C R E T E L ' DeT| b S G H S D 00353^ 5 28C 35 3 9 5 o ' S O “ ' w •</) c Ç0 u. eg « Z 3 5 Q . Z ■gu. g 2 - E Ï— H < X « S es = > if o3 I « § £ * >u HI — >U S M in in in -U 1

C945K

Abstract: c550b C548B TO-92 227 1020 C2785 bc 9013 MPS6521 pn3565 cs9015 C559B
Contextual Info: NPN Low Level Amplifiers Device No. [Mark] K S C 900 Case Style I CBO IC V CE VCB h FE & @ Min Max mA (V) (nA) @ (V) Max V CE(SAT) (V) Max & V BE(SAT) V BE(ON) * IC @ (mA) IC C ob (pF) (V) (I = ) Min Max B 10 Max I (MHz) @ C Min (mA) NF (dB) Max Test Cond.

A 928A

Abstract: 74Ks A992 sc2316 A928a sc1845 PNP 3-224 2N5401K
Contextual Info: PNP Medium Power Transistors Device No. [Mark] Case Style VCES* V V CBO EBO V (V) Min (V) Min Min VCEO (continued) ICBO IC V CE VCB hFE & @ Min Max (mA) (V) (nA) @ (V) Max V BE(SAT) V BE(ON) * IC C ob (mA) @ (pF) (V) & IC (V) Max Max (I = ) Min Max B 10

PN4250

Abstract: MPS-A70
Contextual Info: PNP Transistors ö cn o L O W LEVEL AMPS Type No. Case Style Vc b o V) Min V CEO (V) Min 2N2604 TO-46 60 45 DO m v EBO (V) Min 6 'CBO (" A I Max 10 v CR (Ç f *>FE a Min Max 350 45 60 40 2N2605 TO-46 60 ‘ 45 6 10 2N3548 TO-18 TO-18 60 60 60 45 6 6 25

National 2N3819

Abstract: 2N5248
Contextual Info: Discrete POWER & Signal Technologies National Semiconductorm N-Channel JFETs RF, VHF, UHF Amplifiers B V GSS Device No. C ase Style 2N3819 2N5245 2N5246 2N5247 2N5248 TO-92 TO-92 TO-92 TO-92 TO-92 25 30 30 30 30 1 1 1 1 1 2N5484 2N548S 2N5486 2N5949 2N5950

2N3702 NATIONAL SEMICONDUCTOR

Abstract: 2N4917 2n5354 national semiconductor 2n3644 national semiconductor 2N4121 2N5143 MP03906 TIS92 2N3638A 2N3644
Contextual Info: Case Style VcBO V Min VCEO (V) Min Vebo (V) Min 2N2904 TO-5 60 40 5 Ices * Icbo @ Vcb (nA) (V) Max 20 50 By Its 2N2904A TO-5 60 60 40 5 5 10 20 50 50 Manufacturer also Avail. JAN/TX/V Versions 2N2905A also Avail. JAN/TX/V Versions TO-5 2N2906 TO-18 60 60

DH3724CN

Abstract: MPSH30 transistor se5020 MPS6544 2N5189 2N3444 2N3563 2N3646 DH3724CD DH3724
Contextual Info: 3> —3 r* to m zs M r> o SATURATED SWITCHES Continued Type No. Case Stylo 2N5769 TO-92 (92) 2N5772 TO-92 (92) VCES* v CBO (V) Min VcEO (V) Min v EBO (V) Min 40 15 4.5 40 15 15 5 'CES* 'CBO « (nA> Max 400 500 MPS706 TO-92 (92) 15 MPS834 TO-92 (92) 40 MPS2369

c546b

Abstract: c557b of bc 237 b C547B c558b BC 9014 ba W61C c 557b 082BC w61b
Contextual Info: NPN General Purpose Amplifiers & Switches Device No. [Mark] B C W65C [ED ] Case Style TO-236 49 V CEO (V) Min 32 B C X 58 TO-92 (97) 32 BSR14 [U8] TO-236 (49) 40 V CBO VCES* (V) Min 60 75 V EBO (V) Min 5 I CBO ICES* (nA) Max 20* @ VCB (V) 32 TO-236 (49)

2N3563

Abstract: se5020 MPS6544 MPS-6544 SE5023 2N347B 2n3600 tis86 MPS6547 2N2857
Contextual Info: NPN Transistors VCES* VCBO V Min Vceo (V) Min v EBO (V) Min 2N2857 TO-72 30 15 2.5 2N3478 TO-72 30 15 ' CB0 Vcr <"A) @ “ Max 11 *>FE @ >C & Vce Min Max (mA) (V) 10 15 30 2 20 1 25 150 150 3 2 VCE(SAT) VßE(SAT) . (V) @ (V) & Max Min Max < "*> Cob/Cfo (PF)

CS9016

Abstract: SA733 CS9015 2SA1015 CS9014C CS9015C CS9016F CS9016H CS9018D CS9018F
Contextual Info: This Consumer Series Material Consumer Series IT continued In a bJ fcj Copyrighted a a jr a tn UJ b-1 By -C O) Device No. Case Style CS9014C ^C E O VEBO *CBO hFE w 'c V V CE(SAT) V BE(SAT) •c NF (dB) Max Test Conditions Process No. fT C<* Min Max (mA)

Contextual Info: PNP Transistors * D is c r e te P O W E R & S ig n a l T e c h n o lo g ie s National p^p s e m i c o n d u c t o r v D evice No. 2N4402 2N4403 Case Style TO-92 92 TO-92 (92) ¥ cbo v v CEO v V EBO (V) Min (V) Min (V) Min 40 40 5 40 40 *CBO M ax Q e h FE

SA733

Abstract: CS9016 2SC1815 CS9018 2SA1015 CS9014C CS9015C CS9016F CS9016H CS9018D
Contextual Info: Consumer Series Consumer Series continued ^080 ^C E O VEBO *CBO Case Style Min Min Min CS9014C TO-92 (92) 50 40 5 50 CS9015C TO-92 (92) 50 40 5 CS9016F TO-92 (92) 30 20 CS9016H TO-92 (92) 30 I CS9018D TO-92 (92) CS9018F TE SOhOO Device No. S5h DETTOSI I

2SA1015

Contextual Info: I t i 50113Q 00M0S31 MBS I Consumer Series Consumer Series continued y ceo V EBO (V) Min (V) Min (V) Min TO-92 (92) 50 40 5 50 CS9015C TO-92 (92) 50 40 5 CS9016F TO-92 (92) 30 20 CS9016H TO-92 (92) 30 CS9018D TO-92 (92) CS9018F Device No. Case Style CS9014C