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    50113Q Datasheets Context Search

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    2SA1015

    Contextual Info: I t i 50113Q 00M0S31 MBS I Consumer Series Consumer Series continued y ceo V EBO (V) Min (V) Min (V) Min TO-92 (92) 50 40 5 50 CS9015C TO-92 (92) 50 40 5 CS9016F TO-92 (92) 30 20 CS9016H TO-92 (92) 30 CS9018D TO-92 (92) CS9018F Device No. Case Style CS9014C


    OCR Scan     		50113q00m0s31cs9014ccs9015c+7cs9016fcs9016hcs9018dcs9018fcs9q18gcs9018i2sa1015 PDF

    J111 national

    Abstract: J112 J113 25CC J111 MMBFJ111 MMBFJ112 MMBFJ113 MARK 6C SOT-23 k20a
    Contextual Info: S e m i c o n d u c t o r " J111 J112 J113 G MMBFJ111 MMBFJ112 MMBFJ113 T O -9 2 D M ark: 6 P / 6 R / 6 S N-Channel Switch T his device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Proce ss 51.


    OCR Scan     		mmbfj111mmbfj112mmbfj113ot-23+8d0m0t33j111 nationalj112j11325ccj111mark 6c sot-23k20a PDF

    dual P-CHANNEL 30V DS MOSFET

    Abstract: NDS8958 Dual N & P-Channel MOSFET
    Contextual Info: Na t t o n a l Semiconductor" July 1996 N D S8958 Dual N & P-Channel Enhancem ent M ode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan     		nds8958035fib5d113ddual p-channel 30v ds mosfet+1dual n & p-channel mosfet PDF