TO82 TRANSISTOR Search Results

TO82 TRANSISTOR

Abstract: npn 2N2383 2N2753 2NXXXX 2N1069 TO53 transistor 2n2383 2n1117 2N1620 2N2227
Contextual Info: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE |ù 2 5 M Q S a 0 00 07=11 M J ' ^ T g ^ T p f leMax Amps VCECHSUS Polarity 2N1015 2N1015A 2N1015B 2N1015C

TO82 TRANSISTOR

Abstract: TO82 2N2227
Contextual Info: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE | ù 25MQSa 00007=11 M J ' ^ T g ^ T p f Polarity leMax Amps VCECHSUS Volts 2N1015 2N1015A 2N1015B 2N1015C

2N1016

Abstract: 2N2772 2N2771 2N1015 2N1016D 2N2227 TO82 2N2228 2N1016B 2N3430
Contextual Info: • 4 ñ b c1 E m 3 D D G D 4 3 ‘ì DbD discrete devices JEmitronicr hot line TOLL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JEDEC/TYPE 151 153 152 154 2N1015, A, B, C, D 2N1016,

2N2772

Abstract: TO82 2N2232 2N3475 2n2227 2n3471 2n2228 2n1016 2N2226 2N1050C
Contextual Info: discrete devices JEmitronicr hot line TO LL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JE D E C /T Y P E 151 153 152 154 2N1015, A, B, C, D 2N1016, A, B, C, D 2N3429-32 163 164 PEAK CURRENT

2N2227

Abstract: 2N2228 2N2772 2N1016 152-06 2N3431 154-04 TO82 2N3430 2N2229
Contextual Info: A Hi-Reliability Semiconductor Manufacturer Home Distributors Employment Information Military Product Products Quality Quote Request Value Added E-mail home | help | email Alloy Transistors HIGH S.O.A. NPN POWER TRANSISTORS 6-20 AMPERES 2N1015, 2N1016, 2N3429-32

Darlington npn stud mount

Abstract: TO82 2N3429 2N6840 2N1015 2N1016 2N3470-73 TO82 package 40240
Contextual Info: POÜJEREX INC -=11 De J 7Hc14ti51i DGQlflS? 0 | Power Transistors & Darlington Modules T '-3 3 -0 / NPN Power Switching Transistors le Amps y CEO (SUS) (Volts) tf(max) (¡¿sec) Pt(max) Watts Tc (°C) High Safe Operating Area (SOA) 25 40-240 175 1.5 5 25

SPC151-04

Abstract: SPC151-06 SPC151-08 SPC151-10 SPC151-12 SPC151-14 SPC151-16 SPC151-18 SPC151-20 SPC151-22
Contextual Info: POWER TRANSISTORS TYPE NO. SPC151-04 SPC151-06 SPC151-08 SPC151-10 SPC151-12 SPC151-14 SPC151-16 SPC151-18 SPC151-20 SPC151-22 SPC151-24 SPC151-26 SPC151-28 SPC151-30 PT @ 25’ C Watts 100 100 100 100 100 100 100 100 100 100 100 100 100 100 MAXIMUM RATINCS

Contextual Info: POWER TRANSISTORS PT TYPE NO. SPC151-04 SPC151-06 SPC151-08 SPC151-10 SPC151-12 SPC151-14 SPC151-16 SPC151-18 SPC151-20 SPC151-22 SPC151-24 SPC151-26 SPC151-28 SPC151-30 MAXIMUM RATINCS @ 25’ C B V cb o B V ceo B V ebo le V Watts V V À 100 100 100 100 100

nec 2Sb617

Abstract: 2SA1102 SANKEN 2SD371-0 sanken 2sa1102 LT019 181T2B Gentron 2SA808A LT019S 2SB617
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A fT t0N r hFE 'CBO Max Max Max on ON) Min (Hz) (A) (8) Max (Ohms) 60 60 60 60 65 65 65 65 65 65 65 65 75 100 100 100 100 100 100 40 40 40 40 40 40 40 50 50 50 60 60 22 40 50 85 85

Contextual Info: li POWER TRANSISTORS I i r PT TYPE NO. @ 25*C Watts hFE M AXIM UM RATINGS B vc bo B V ceo B V ebo V V V le A M IN MAX @ Sat Test Voltages Conditions le VCE VCE VBE le Ib I ebo À V V V A A ma SPC151-04 100 65 40 25 6 11 1.5 4 1.30 2.5 1.5 .25 20 100 85 60

2N1015

Abstract: 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B
Contextual Info: POWER TRANSISTORS *•* PT TYPE NO. TO-82 m MAXIMUM RATINGS 25*C BVcbo BVctt» BVebo le V V V A Watts hft MIN MÀX le A * Va V _ Sat Test Voltages Conditions le fa I ebo Va V« V A ma V A 2N1015 150 30 30 25 7.5 10 2 4 1.5 2 2 .3 20 2N1015A 150 60 60 25 7.5

SPC151-04

Abstract: SPC151-06 SPC151-08 SPC151-10 SPC151-12 SPC151-14 SPC151-16 SPC151-18 SPC151-20 SPC151-22
Contextual Info: A P I ELECTRONICS INC b lE » • Q G 4 3 5 CI2 □ □ □ □ E cn Ib T ■ AfIC POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS B V c b o B V ceo B V ebo Ic Watts V V V A hFE @ 25°C MIN MÁX Sat Voltages @ Ic A VCE VCE V V V be V Test Conditions Ic l8 I ebo

LM3661TL-1.25

Contextual Info: POWER TRANSISTORS PT TYPE NO. M A X IM U M R A TIN C S le 25“C B V c b o B V c to B V eso V V A V W atts h! @ M IN M AX @ le A V et V Sat Voltages Vet V be V V Test C onditions le A le A Uso ma 1.5 .25 20 SPC151-04 io o i 65 40 25 6 11 1.5 4 1.30 2.5 SPC151-06

SPC151-04

Abstract: SPC151-06 SPC151-08 SPC151-10 SPC151-12 SPC151-14 SPC151-16 SPC151-18 SPC151-20 SPC151-22
Contextual Info: 8 36 5 7 0 0 S O L ID POWER CO RP 95C SOLID POWER CORP 00121 D ~T~33~0/ 03bS7D0 DQ0G1S1 h f ~ TS POWER TRANSISTORS PT TYPE NO. M A XIM UM RATINGS @ 25°C B V cbo B V ceo B V ebo Ic V V V A W atts hFE M IN MAX Sat Voltages @ Ic A VCE VCE V V V V be Test Conditions

Transistors 2n551

Abstract: Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444
Contextual Info: INTEX/ SEflITRÔNICS CORP j e m i E T o 27E D • MôblEHb GD0D2Ö? S discrete devices SEMICONDUCTORS n Sem itronics Corp. 7 ^ - * 2 .7 - silicon transistors cont’d - T - 3 3 O - 0 silicon power transistors rn * Polarity Power Dissipation @ 25°C Watts

2NXXXX

Abstract: NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package
Contextual Info: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4. \ . v i i I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389

Contextual Info: April 1995 N NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has

POWER TRANSISTORS 10A 400v pnp

Abstract: NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352
Contextual Info: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4 .\. v ii I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389

BD291

Abstract: 2SC3883 SD1534-8 2S-C3883 bd292 trw rf transistors 2SC2198 Sanken NPN SD1428 2N5034 2N5035
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO PD Max r hFE fT 'CBO Max Max Mln (Hz) (A) (8) on ON) 100 100 100 100 100 100 50 50 50 50 50 100 50 218 218 30 30 75 75 75 75 75 75 75 75 80 60 60 70 80 22 22 22 22 22

2sc1030 hitachi

Abstract: 2SC1445 SANKEN 2SC681A HITACHI 2sd82 sanken 2SC2577 sanken Sanken 2SC1111 2SD82 BD199 2SD180 2Sc2316
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO (A) Of) PD r ICBO Max hFE fT ON) Min (Hz) Max (A) (CE)sat Max (s) Max (Ohms) Toper Max (°C) Package Style 175 175 175 175 140 140 140 140 140 140 TO-3 TO-36 TO-36 TO-3 TO-3

2N5239

Abstract: 2N5241 2n5241 jantx 2N5240 to-53
Contextual Info: HIGH VOLTAGE TRANSISTORS PT TYPE NO. 2N5239 2N5240 2N5241 Ic • Va» k m « Vao loo Wax Ic « 2SC M AX SUS V MA V MA wm s ; A 100 5.0 225 100 300 4.0 100 5.0 300 100 375 2.0 125 5.0 325 100 400 2.5 @ hit . È (125*C k V MA MIN MAX 300 375 400 20 20

Contextual Info: HIGH VOLTAGE TRANSISTORS TO-3 PT TYPE NO. @ Ic VCEO Ic is Y M ÀX sui V MA Watts A 2N3788 1Q9 2N3902 100 2N5157 1ÖÜ V lao MA @ V cex Ic 125°C MA V ?25 100 400 5-9 325 100 400 .25 700* 2.5 4ÖÖ 1ÔÔ 5ÔÔ .25 7ÜÜ* .5 2,0 3.5 15 *Vcex @ 25°C @ Veto

Contextual Info: POWER TRANSISTORS TYPE NO. TO-114 PT MAXIMUM RATINGS @ » V ra g g i n ra s i r m « M V V A Watts V tlFE MIN MAX <2 le A V ce V Test Sat Voltages Conditions le Ib Imo* V a V be V V A A ma 2N2109 250 50 50 15 30 10 10 4 1.5 Ì.5 10 T ~ 2N2110 250 100 100 15

2N2117

Abstract: 2N2109 2N2110 2N2111 2N2112 2N2113 2N2114 2N2116 2N2118 2N2119
Contextual Info: POWER TRANSISTORS PT TYPE NO. TO-114 MAXIMUM RATINGS @ » V Watts V V V A tlFE MIN MAX <2 lc A V ce V Test Sat Voltages Conditions IEBP* lc Is V a V be V V A A ma 2N2109 250 50 50 15 30 10 10 4 1.5 Ì.5 10 T ~ 2N2110 250 100 100 15 30 10 10 4 15 2.5 10 2 25