TO205AF Search Results

ta9192

Abstract: TA919 AN7254 AN7260 RFL4N12 RFL4N15
Contextual Info: [ /Title RFL4N 12, RFL4N1 5 /Subject (4A, 120V and 150V, 0.400 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO205AF) /Creator () /DOCIN FO pdfmark RFL4N12, RFL4N15 Semiconductor 4A, 120V and 150V, 0.400 Ohm,

AN7254

Abstract: AN7260 RFL1N12L RFL1N15L
Contextual Info: [ /Title RFL1N 12L, RFL1N1 5L /Subject (1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, Logic Level, N-Channel Power MOSFETs, TO205AF) RFL1N12L, RFL1N15L Semiconductor 1A, 120V and 150V, 1.900 Ohm,

2N6782

Abstract: 2N67 TB334
Contextual Info: [ /Title 2N67 82 /Subject (3.5A, 100V, 0.600 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Fairchild Corporation, NChannel Power MOSFET, TO205AF ) /Creator () /DOCI NFO pdfmark 2N6782 Data Sheet December 2001 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET

2N6796U

Abstract: 2N6796
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6796 2N6796U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

VP2410

Abstract: vP2410B
Contextual Info: SILICONIX INC 1ÔE D 0254735 0014127 1 CY'Siliconix VP2410 SE R IE S JLJm in c o rp o ra te d P-Channel Enhancem ent-M ode M O S Transistors PRODUCT SUMMARY PART NUMBER TO-92 V BR DSS fDS(ON) (Í1 ) (V) Id (A) PAC KA G E VP2410L -2 4 0 10 -0.18 TO-92 VP241QB

40128

Contextual Info: SILICONIX INC IflE D • ÖS54735 0014110 b VN4012 SERIES JLfTZ'Siliccsnix M in c o r p o r a te d N-Channel E n h a n ce m e n t-M o d e MOS T ra n sisto rs T -'27-23 PRODUCT SUMMARY TO-92 PART NUMBER V BR DSS rDS(ON) ( il) (V) Id (A) PACKAGE VN4012L 400

Contextual Info: FSGL130R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FSPL234D1 FSPL234F FSPL234R FSPL234R3
Contextual Info: FSPL234R, FSPL234F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

2E12

Abstract: FSPL130D1 FSPL130R3 Rad Hard in Fairchild for MOSFET
Contextual Info: FSPL130R, FSPL130F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the

1E14

Abstract: 2E12 FSGL234D1 FSGL234R3 FSGL234R4
Contextual Info: FSGL234R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle GL R bdin dd, GR is- Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment.

1E14

Abstract: 2E12 FSL23A0D FSL23A0D1 FSL23A0D3 FSL23A0R FSL23A0R1 FSL23A0R3 Rad Hard in Fairchild for MOSFET
Contextual Info: FSL23A0D, FSL23A0R Data Sheet 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

IRLF130

Abstract: SS452 mosfet b44 diode b44
Contextual Info: Preliminary Data Sheet No. PD-9.659 INTERNATIOIM AL R E C T IFIE R r i o R REPETITIVE AVALANCHE AND dv/dt RATED IRLF130 HEXFET TRANSISTORS LOGIC LEVEL L SERIES N-CHANNEL 100 Volt, 0.20 Ohm Logic Level HEXFET® TO-205AF TO-39 Hermetic Package The Logic Level ‘L’ series of power MOSFETs are designed

2N6796

Abstract: TB334
Contextual Info: 2N6796 Data Sheet December 2001 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features • 8A, 100V The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor

2N6790

Abstract: TB334
Contextual Info: 2N6790 Data Sheet December 2001 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features • 3.5A, 200V The 2N6790 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching

Contextual Info: JANSR2N7272 Semiconductor Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 100V, rDS ON = 0.180Ω The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both

FSL110D1

Abstract: 2E12 FSL110D FSL110D3 FSL110R FSL110R1 FSL110R3
Contextual Info: FSL110D, FSL110R Data Sheet October 1998 File Number 4224.3 3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

FRL9130R

Abstract: 2E12 FRL9130D FRL9130H Rad Hard in Fairchild for MOSFET
Contextual Info: FRL9130D, FRL9130R, FRL9130H 5A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 5A, -100V, RDS on = 0.550Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

LD 33 regulator

Abstract: JANTXV2N6800 IRFF330 JANTX2N6800
Contextual Info: PD - 90432C IRFF330 JANTX2N6800 JANTXV2N6800 REF:MIL-PRF-19500/557 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF330 BVDSS 400V RDS(on) 1.0Ω ID 3.0A  The HEXFET technology is the key to International

1E14

Abstract: 2E12 FSPL234D1 FSPL234F FSPL234R FSPL234R3 diode vg 902 c2
Contextual Info: FSPL234R, FSPL234F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the

24v 12v 10A regulator

Abstract: IRHF53Z30 IRHF54Z30 IRHF57Z30 IRHF58Z30
Contextual Info: PD - 93793 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF57Z30 30V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHF57Z30 100K Rads (Si) IRHF53Z30 300K Rads (Si) RDS(on) 0.045Ω 0.045Ω ID 12A* 12A* IRHF54Z30 600K Rads (Si)

IRHF53230

Abstract: IRHF54230 IRHF57230 IRHF58230
Contextual Info: PD - 93788 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF57230 200V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHF57230 100K Rads (Si) IRHF53230 300K Rads (Si) RDS(on) 0.22Ω 0.22Ω ID 7.3A 7.3A IRHF54230 600K Rads (Si)

IRHF7430SE

Abstract: JANSR2N7464T2 400V to 12V DC Regulator 500V 25A Mosfet
Contextual Info: PD - 91863C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF7430SE JANSR2N7464T2 500V, N-CHANNEL REF: MIL-PRF-19500/675 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHF7430SE Radiation Level RDS(on) 100K Rads (Si) 1.77Ω ID QPL Part Number

Contextual Info: FSGL230R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both