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H5N5012P-E
|
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Renesas Electronics Corporation
|
Nch Single Power Mosfet 500V 25A 225Mohm To-3P |
|
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RJK5015DPK-00#T0
|
|
Renesas Electronics Corporation
|
Nch Single Power Mosfet 500V 25A 240Mohm To-3P |
|
|
|
RJK5015DPM-00#T1
|
|
Renesas Electronics Corporation
|
Nch Single Power Mosfet 500V 25A 240Mohm To-3Pfm |
|
|
|
H5N5007P-E
|
|
Renesas Electronics Corporation
|
Nch Single Power Mosfet 500V 25A 225Mohm To-3P |
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|
|
MG800FXF1JMS3
|
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Toshiba Electronic Devices & Storage Corporation
|
N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET |
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TK190U65Z
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Toshiba Electronic Devices & Storage Corporation
|
MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL |
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