IRHF57230 Search Results
IRHF57230 Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IRHF57230 | International Rectifier | 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package | Original | 129.65KB | 8 | ||
| IRHF57230 | International Rectifier | RADIATION HARDENED POWER MOSFET | Original | 130.68KB | 8 | ||
| IRHF57230SE | International Rectifier | RADIATION HARDENED POWER MOSFET | Original | 127.64KB | 8 | ||
| IRHF57230SE | International Rectifier | Radiation Hardened Power MOSFET | Original | 127.82KB | 8 |
IRHF57230 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
IRHF53230
Abstract: IRHF54230 IRHF57230 IRHF58230
|
Original |
irhf57230irhf53230irhf54230irhf58230+1 | |
diode um 67A
Abstract: IRHF57230SE JANSR2N7498T2
|
Original |
pd-93857cirhf57230sejansr2n7498t2mil-prf-19500/706+4 | |
IRHF57230SE
Abstract: JANSR2N7498T2
|
Original |
93857birhf57230sejansr2n7498t2mil-prf-19500/706+3 | |
IRHF57230SEContextual Info: PD - 93857A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF57230SE 200V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHF57230SE 100K Rads (Si) RDS(on) 0.24Ω ID 7.0A International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for |
Original |
3857airhf57230semil-std-750mll-std-750+1 | |
|
Contextual Info: PD-93857C IRHF57230SE JANSR2N7498T2 200V, N CHANNEL REF:MIL-PRF-19500/706 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 5 TECHNOLOGY Product Summary Part Number IRHF57230SE Radiation Level 100K Rads (Si) RDS(on) 0.24Ω ID QPL Part Number 6.7A JANSR2N7498T2 |
Original |
pd-93857cirhf57230sejansr2n7498t2mil-prf-19500/706+3 | |
IRHF53230
Abstract: IRHF54230 IRHF57230 IRHF58230
|
Original |
3788airhf57230irhf53230irhf54230+5 | |
|
Contextual Info: PD - 93788A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF57230 200V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHF57230 100K Rads (Si) IRHF53230 300K Rads (Si) RDS(on) 0.22Ω 0.22Ω ID 7.3A 7.3A IRHF54230 600K Rads (Si) |
Original |
3788airhf57230irhf53230irhf54230+5 | |
|
Contextual Info: PD - 93857 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF57230SE 200V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHF57230SE 100K Rads (Si) RDS(on) 0.24Ω ID 7.0A International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for |
Original |
irhf57230semil-std-750mll-std-750o-205af | |
IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
|
Original |
30am-544-0-1737-2comdb8029cirf460+9 | |
irf5n5210sc
Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
|
Original |
4246airhg567110mo-036abirhg563110+12 | |
2N7498T2
Abstract: 2N7497 2N7499T2 2N7497T2 IRHF57133SE MIL-PRF19500 MOSFET cross-reference 2N7499 mil-prf-19500/JANTX2N5152
|
Original |
mil-prf-19500/706bmil-prf-19500/706a2n7497t22n7498t2+8 | |
IRHNA57064SCS
Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
|
Original |
94046birhnj597230irhnj593230o-254aa+13 | |
2N7550
Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
|
Original |
2n75502n75492n75452n7476t1+6 | |
IRHNJ597230SCS
Abstract: international rectifier SMD 30CLJQ100SCS IRHNJ597034SCS IRHG6110SCS IRHNJ57234SESCS IRFE130SCX 35CLQ045SCS IRHNJ597130SCS IRHNJ7430SESCS
|
Original |
4047airhnj597130irhnj593130o-254aa+13 |