TNPC Search Results

Contextual Info: I =¥= = = = ’= IBM11N16845BB IBM11N16845CB Preliminary 16M x 72 Super EOS Module Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 16Mx72 Extended Data Out Page Mode DIMMs • Performance: tcAc ! tftA t:;c i tnpc Provides Chip-Kill ECC protection transparently to

MPC271

Abstract: PC271 UPC271 IIPC271EO LM311 Vo-35 UPC311
Contextual Info: MPC271 / 311 P re c isio n V o lt a g e C o m p a r a t o r s FEATURES G E N E R A L D E S C R IP T IO N The pPC271/3t1 are voltage comparators that nav* • Operate from single 5 V supply tnpct currents more than a hundred times lower than • Maximum input current 250 nA

TC5117445CSJ

Contextual Info: TO SHIBA_ TC5117445CSJ-40,-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORD BY 4-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC5117445CSJ is an EDO (Hyper Page) dynamic RAM organized as 4,194,304 words by 4 bits. The

TC514265DJ

Abstract: TC514265D TC514265 SOJ40-P-400
Contextual Info: TOSHIBA TC514265DJ/DFT-50/60/70 PRELIMINARY 262,144 WORD X 16 BIT EDO HYPER PAGE DYNAMIC RAM Description TheTC514265DJ/DFT is an EDO (hyper page) dynamic RAM organized as 262,144 words by 16 bits. TheTC514265DJ/ DFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide oper­

TC51V16405

Abstract: TC51V16405c
Contextual Info: INTEGRATED TOSHIBA " O S H I B A MOS DIGITAL I NT EGR AT ED CIRCUIT ” 51 V 16405 C5JS CST5 - SO TCS1V1c405 CSJ S/CSTS- 60 CIRCUIT TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 4,194,304 W O RD x 4 BIT FAST PAGE DYNAM IC RAM DESCRIPTION The TC51V16405CSJS/CSTS is fast page dynamic RAM organized 4,194,304 words by 4 bits. The

Contextual Info: TOSHIBA TC5164 5 805AJ/AFT/AJS/AFTS-40,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8,388,6O8-WORD X8-BIT EDO (HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)805AJ/AFT/AJS/AFTS is an EDO (hyper page) dynamic RAM organized as 8,388,608

v801

Abstract: tc5165165
Contextual Info: T O SH IB A THM72V8015ATG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM72V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which

Contextual Info: THM73V8015ATG-4,-5 T O SH IB A TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which

tc516

Contextual Info: THM73V1615ATG-4,-5 T O SH IB A TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V1615ATG is a 16,777,216-word by 72-bit dynamic RAM module consisting of 18 TC5165405AFT DRAMs on a printed circuit board. This module is optimized for applications which

MSM51V17805

Abstract: MSM51V17805DSL
Contextual Info: E2G0129-17-61 O K I Semiconductor MSM51V17805D/DSL 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM51V17805D/DSL is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17805D/DSL achieves high integration, high-speed operation,

MSM5118165B

Abstract: TSOP 86 Package
Contextual Info: O K I Semiconductor MSM5118165B_ E2G 0055-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM5118165B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The MSM5118165B achieves high integration, high-speed operation, and low-power

V1640

Abstract: MSM51V16405D MSM51V16405DSL
Contextual Info: E2G0124-17-61 O K I Semiconductor MSM5 1V1 6 4 0 5 P/PSL 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM51 V16405D/DSL is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16405D/DSL achieves high integration, high-speed operation,

Contextual Info: TOSHIBA THL64V4075ATG-4,-5,-4S,-5S TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT DYNAMIC RAM MODULE DESCRIPTION The THL64V4075ATG is a 4,194,304-word by 64-bit dynamic RAM module consisting of four TC5165165AFT/AFTS DRAMs on a printed circuit board. This module is optimized for applications

Contextual Info: IBM11N32645B IBM11N32735B IBM11N32645C IBM11N32735C 32M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • System Performance Benefits: - Non buffered for increased performance - Reduced noise 35 VSs/V cc P^s

Contextual Info: IBM11M2645H 2M x 64 DRAM MODULE Features System Performance Benefits: • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 2Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 -Buffered inputs except RAS, Data -Reduced noise (32 Vss/Vcc pins)

Contextual Info: IBM11N8845HB Preliminary 8M x 72 Super EOS Module Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 8Mx72 Extended Data Out Page Mode DIMMs • • Provides Chip-Kill ECC protection transparently to an existing Single Error Correction (SEC) system

Contextual Info: IBM11M32735B IBM11M32735C 32M x 72 DRAM Module Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - Buffered inputs except RAS, Data - Reduced noise (32 VSs/V cc P^s) - 4 Byte Interleave enabled - Buffered PDs

Contextual Info: IBM0164165B IBM0164165P 4M x 16 13/9 EDO DRAM Features • 4,194,304 word by 16 bit organization Dual CAS Byte Read/Write • Single 3.3 ± 0.3V power supply Performance: -50 • Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/Retention Time

Contextual Info: I = = = = ¥ = = = ’ = IB M 1 1 N 2 6 4 5 H IB M 1 1 N 2 7 3 5 H 2M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 2Mx64, 2Mx72 Extended Data Out Page Mode DIMMs applications • System Performance Benefits:

MSM5117405

Abstract: MSM5117405B
Contextual Info: O K I Semiconductor MSM5 1 17405B_ E2G0039-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117405B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117405B achieves high integration, high-speed operation, and low-power

MD51V65165

Abstract: MD51V65165-50 MD51V65165-60
Contextual Info: E2G0146-18-11 O K I S em iconductor 3ver3ion: M ar 1998 MP51V65165_ 4,194,304-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MD51V65165 is a 4,194,304-word x 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS

374C

Contextual Info: - PRELIMINARY - November 1995 Edition 2.1 FUJITSU PRODUCT PROFILE SHEET M B814405C-60/-70 CMOS 1 M X 4 BIT HYPER PAGE MODE DRAM CMOS 1,048,576 x 4 bit Hyper Page Mode Dynamic RAM The Fujitsu MB814405C is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304

Contextual Info: TOSHIBA TH M 72V1615ATG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM72V1615ATG is a 16,777,216-word by 72-bit dynamic RAM module consisting of 18 TC5165405AFT DRAMs on a printed circuit board. This module is optimized for applications which

Contextual Info: PRE LIM IN AR Y- - May 1996 Edition 1.0 FUJITSU PRODUCT PROFILE SHEET MB8 1 V16405A-60/-70 CMOS 4M x 4 BIT HYPER PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Hyper Page Mode Dynamic RAM The Fujitsu MB81V16405A is a fully decoded CMOS Dynamic RAM DRAM that contains