UPC271 Search Results

Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC2710TB 5V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER FEATURES 35 • HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold or SOT-363 package • SATURATED OUTPUT POWER: +13.5 dBm • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V

P12152E

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT uPC271 OT 5 V, MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The /¿PC2710T is a silicon monolithic integrated circuits designed as PA driver for 900 MHz band cellular telephone tuners. This IC is packaged in minimold package.

BYPASS Capacitors NEC

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT uPC2711T 2.9 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES High power gain 13 dB TYP. @ f = 1 GHz Excellent frequency response 2.9 GHz TYP. @ 3 dB down below the gain at 0.1 GHz

Contextual Info: 1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2710T UPC2713T FEATURES • FR EQUENCY RESPONSE: 1.5 GHz • HIGH GAIN: 33 dB UPC2710T • SATURATED OUTPUT POWER: +13.5(UPC2710T) m TJ • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE Ô . SV SINGLE SUPPLY VOLTAGE

Contextual Info: NEC”LOW POWER CONSUMPTION UPC2714T UPC2715T SILICON MMIC AMPLIFIER FEATURES_ • LOW POWER CONSUMPTION: 15 mW Vcc = 3.4 V, Icc - 4.5 mA • HIGH POWER GAIN: 20 dB (UPC2715T) • WIDE FREQUENCY RESPONSE: 2 GHz (UPC2714T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN

UPC2710T-E3

Abstract: UPC2713T UPC2713T-E3 t06 49 uPC2710 UPC2710T t06 93
Contextual Info: 1.5 GHz SILICON MMIC UPC2710T WIDE-BAND AMPLIFIER UPC2713T GAIN vs. FREQUENCY FEATURES • FREQUENCY RESPONSE: 1.5 GHz • SATURATED OUTPUT POWER: +13.5 UPC2710T • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE • 5 V SINGLE SUPPLY VOLTAGE

UPC2710T-E3

Abstract: uPC2710 UPC2710T
Contextual Info: 1.5 GHz SILICON MMIC UPC2710T WIDE-BAND AMPLIFIER GAIN vs. FREQUENCY FEATURES 35 • FREQUENCY RESPONSE: 1.5 GHz • SATURATED OUTPUT POWER: +13.5 • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE • 5 V SINGLE SUPPLY VOLTAGE Gain, GS dB

Contextual Info: 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2708T UPC2711T FEATURES • W IDE FREQUENCY RESPONSE: 3 GHz • HIGH GAIN: 15 dB UPC2708T • SATURATED OUTPUT POWER: +10 dBm (UPC2708T) m T> • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE

am tuners

Abstract: Sat Tuner Application Note marking c1g 865 marking power amplifier diode gp 421 marking 865 marking 865 mmic transistor 936 UPC2711 UPC2711TB
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2711TB, UPC2712TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER TYPICAL PERFORMANCE CURVES FEATURES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY 25 • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V

UPC2713T-E3

Abstract: UPC2713T
Contextual Info: 1.5 GHz SILICON MMIC UPC2713T WIDE-BAND AMPLIFIER GAIN vs. FREQUENCY FEATURES 35 • FREQUENCY RESPONSE: 1.5 GHz • 5 V SINGLE SUPPLY VOLTAGE • SUPER SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE Gain, GS dB • INTERNAL CURRENT REGULATION MINIMIZES GAIN

UPC2708

Abstract: UPC2708T DB815 UPC2708T-E3 UPC2711 UPC2711T UPC2711T-E3
Contextual Info: 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER FEATURES UPC2708T UPC2711T GAIN vs. FREQUENCY 20 • WIDE FREQUENCY RESPONSE: 3 GHz • HIGH GAIN: 15 dB UPC2708T UPC2708 15 Gain, GS (dB) • SATURATED OUTPUT POWER: +10 dBm (UPC2708T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN

low noise, hetero junction fet

Abstract: NE76038 UPB1506 NE721S01 UPC2711 2,5GHz oscillator Prescalers NE329S01 NE429M01 NE696M01
Contextual Info: DBS Receiver NEW! NEW! NE429M01 Hetero Junction FET NE76038 MESFET • 6 pin super minimold package • Available on tape and reel • Low cost plastic package • Available on tape and reel UPC2711/12TB IF Amplifiers • Now available in smaller, lower cost SOT-363 packages

pt 7313

Abstract: diode gp 421 UPC2711TB UPC2711TB-E3 UPC2712TB UPC2712TB-E3
Contextual Info: UPC2711TB UPC2712TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FEATURES TYPICAL PERFORMANCE CURVES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY 25 • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V UPC2712TB • WIDEBAND RESPONSE:

UPC2710TB-E3-A

Abstract: uPC2710 UPC2710T UPC2710TB
Contextual Info: 5V, SUPER MINIMOLD UPC2710TB MEDIUM POWER SI MMIC AMPLIFIER GAIN vs. FREQUENCY and TEMPERATURE FEATURES 35 • HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold or SOT-363 package VCC = 5.0 V • SATURATED OUTPUT POWER: +13.5 dBm • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V

Contextual Info: ,r« 8 1993 NEC 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2708T UPC2711T FEATURES_ • WIDE FREQUENCY RESPONSE: 3 GHz • HIGH GAIN: 15 dB UPC2708T • SATURATED OUTPUT POWER: +10 dBm (UPC2708T) • 5 V SINGLE SUPPLY VOLTAGE • SUPER SM ALL PACKAGE

Contextual Info: SEC 8 1983 LOW POWER CONSUMPTION SILICON MMIC AMPLIFIERS UPC2714T UPC2715T FEATURES_ • LOW POWER CONSUMPTION: 15 mW Vcc = 3.4 V, lex; = 4.5 mA • HIGH POWER GAIN: 20 dB(UPC2715T) • WIDE FREQUENCY RESPONSE: 2 GHz (UPC2714T) • SUPER SMALL PACKAGE

Contextual Info: 2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2709T UPC2712T FEATURES • WIDE FREQUENCY RESPONSE: 2.5 GHz • HIGH GAIN: 23 dB UPC2709T • SATURATED OUTPUT POWER: +11.5 dBm (UPC2709T) 00 • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT uPC2713T 1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • High power gain 29 dB TYP. @ f = 0.5 GHz • Excellent frequency response 1.2 GHz TYP. @ 3 dB down below the gain at 0.1 GHz

DB815

Abstract: UPC2708 UPC2708T UPC2708T-E3 UPC2711 UPC2711T UPC2711T-E3
Contextual Info: 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER FEATURES UPC2708T UPC2711T GAIN vs. FREQUENCY 20 • WIDE FREQUENCY RESPONSE: 3 GHz • HIGH GAIN: 15 dB UPC2708T UPC2708 15 Gain, GS (dB) • SATURATED OUTPUT POWER: +10 dBm (UPC2708T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN

mPC339c

Abstract: UPC272C MPC277G UPC319G MPC393G upc272g UPC271ED 14 pin ic dip UPC311C UPC319C
Contextual Info: SELECTION GUIDE Operating D EV IC E O R IG IN A L Temperature Range Î/PC271C - 2 0 ~ +70 /UPC271ED - 2 0 ~ +80 MPC271G 311 PACKAGE - 2 0 ~ +70 8 Pin Molded DIP 8 Pin Cavity DIP Single High Speed Precision 8 Pin Molded Flat 0 ~ +70 8 Pin Molded DIP MPC311G

MMIC SOT 363 marking 850

Contextual Info: 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FEATURES UPC2711TB UPC2712TB TYPICAL PERFORMANCE CURVES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY • SUPPLY VOLTAGE: V cc = 4.5 to 5.5 V • W IDEBAND RESPONSE:

Contextual Info: 1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2710T UPC2713T FEATURES • FREQUENCY RESPONSE: 1.5 GHz • HIGH GAIN: 33 dB UPC2710T • SATURATED OUTPUT POWER: +13.5 (UPC2710T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE • 5 V SINGLE SUPPLY VOLTAGE

Contextual Info: NEC 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER FEATURES g a in vs. UPC2708T UPC2711T frequency • WIDE FREQUENCY RESPONSE: 3 GHz • HIGH GAIN: 15 dB UPC2708T • SATURATED OUTPUT POWER: +10 dBm (UPC2708T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE

uPC2710TB

Abstract: AGS SOT363
Contextual Info: 5V, SUPER MINIMOLD UPC2710TB MEDIUM POWER SI MMIC AMPLIFIER GAIN vs. FREQUENCY FEATURES • HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold or SOT-363 package • HIGH GAIN: 33 dB TYP • SATURATED OUTPUT POWER: +13.5 dBm • SUPPLY VOLTAGE: Vcc = 4.5 to 5.5 V