V1640 Search Results

V1640

Abstract: MSM51V16405D MSM51V16405DSL
Contextual Info: E2G0124-17-61 O K I Semiconductor MSM5 1V1 6 4 0 5 P/PSL 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM51 V16405D/DSL is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The V16405D/DSL achieves high integration, high-speed operation,

Contextual Info: PRE LIM IN AR Y- - May 1996 Edition 1.0 FUJITSU PRODUCT PROFILE SHEET MB8 1 V16405A-60/-70 CMOS 4M x 4 BIT HYPER PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Hyper Page Mode Dynamic RAM The Fujitsu V16405A is a fully decoded CMOS Dynamic RAM DRAM that contains

HA11A

Contextual Info: PRELIMINARY - - FUJITSU May 1995 Edition 1.0 PRODUCT PROFILE SHEET MB 81 V16400A - 50 / - 60/-70 CMOS 4M X 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM T h e F ujitsu M B 8 1 V 1 6 4 0 0 A is a fu lly d e c o d e d C M O S D yn a m ic RAM D R A M th a t co n ta in s

MSM51V16400A

Contextual Info: O K I Semiconductor MSM51 V16400 A 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The V16400A is a 4,194354-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The V16400A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The V16400A is

Contextual Info: E2G0122-17-61 O K I Semiconductor Thisversion:^ 1998 V16400D/DSL_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM51 V16400D/DSL is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The V16400D/DSL achieves high integration, high-speed operation,

Contextual Info: • « Y U N O Ä T • HY51V17400B,HY51 V16400B 4Ux4, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this

Contextual Info: •HYUNDAI HY51 V17400B.HY51 V16400B 4M x4, F as t Page m ode DESCRIPTION T h is fa m ily is a 16M b it d y n a m ic RAM o rg a n iz e d 4 ,1 9 4 ,3 0 4 x 4 -b it c o n fig u ra tio n w ith F ast P ag e m od e C M O S D R A M s. Fast Page m ode is a kind o f pa ge m ode w h ich is use ful fo r th e read o p e ra tio n . T h e c irc u it and pro ce ss d e sig n a llo w th is

Contextual Info: •HYUNDAI HY51V17400B,HY51 V16400B 4Mx4, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 4,194,304 x 4 -bit configuration w ith Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this

MSM51V16405A

Contextual Info: O K I Semiconductor MSM51 V16405 A_ 4,194,304-W ord x 4-B it DYNAMIC RAM : FAST PAGE MODE TYPE W ITH EDO DESCRIPTION The V16405A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The V16405A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The V16405A is

Contextual Info: C "HYUNDAI • HY51V17404B.HY51 V16404B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

Contextual Info: E2G0124-17-61 O K I Semiconductor This version: Mar. 1998 M SM V16405D/DSL 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM51 V16405D/DSL is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The V16405D/DSL achieves high integration, high-speed operation,

Contextual Info: IIP ^ Y ^ ^QT72 4 f l 0 0 2 ñ 2 cí i:í ñ 01 V16400BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description V16400BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. TheTC51 V16400BST uti­ lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating mar­

A312H

Abstract: A9R-A11R MSM51V16400D MSM51V16400DSL 010L
Contextual Info: E2G0122-17-61 O K I Semiconductor This version: Mar. 1998 M SM 51 VI 6400D /D SL 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPTIO N TheMSM51 V16400D/DSL is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM V16400D/DSL achieves high integration, high-speed operation,

MSM51V16400A

Contextual Info: O K I Semiconductor MSM51 V16400 A_ 4,194,304-Word x 4-Bit DYNAMIC R AM : FA ST P A G E M O D E T Y P E DESCRIPTION The V16400A is a 4494,304-w ord x 4-bit dynam ic RAM fabricated in OKI's CMOS silicon gate technology. The V16400A achieves high integration, high-speed operation, a n d lowpo w er consum ption d u e to q u ad ru p le polysilicon double m etal CMOS. The V16400A is

MSM51V16400

Contextual Info: O K I Semiconductor MSM51 V16400 4,194,304-W ord x 4-B it DYNAM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The V16400 is a new generation dynam ic organized as 4,194,304-word x 4-bit. The technology used to fabricate the V16400 is OKI's CMOS silicon gate process technology.

V1660

Abstract: V1652-V1660 V1638 v1650 V5100 v1620 V1622 V1626 V1628 V1630
Contextual Info: 'T'ol 99D 00141 DE|S23flS34 OODOIMI 1 | 5238534 K N O X S E M I C O N D U C T O R INC TT Varactor Diodes VI620 to VI650 V1620 VT622 V I 624 V1626 V1628 V1630 V1632 V1634 V1636 V1638 V1640 V1642 V1644 V1646 V1648 V1650 Min PF Norn Max 6.1 7.4 9.0 10.8 13.5

TC51V16405

Abstract: TC51V16405c
Contextual Info: INTEGRATED TOSHIBA " O S H I B A MOS DIGITAL I NT EGR AT ED CIRCUIT ” 51 V 16405 C5JS CST5 - SO TCS1V1c405 CSJ S/CSTS- 60 CIRCUIT TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 4,194,304 W O RD x 4 BIT FAST PAGE DYNAM IC RAM DESCRIPTION The V16405CSJS/CSTS is fast page dynamic RAM organized 4,194,304 words by 4 bits. The

Contextual Info: •HYUNDAI H Y 5 1 V 1 7 4 0 4 B ,H Y 5 1 V 1 6 4 0 4 B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

Contextual Info: MEMORY CMOS 4 M x 4 BITS HYPER PAGE MODE DYNAMIC RAM V16405A-60/-70 CMOS 4,194,304 x 4 BITS Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu V16405A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The V16405A features a “hyper page” mode of operation whereby high­

M5M4V16405CJ

Contextual Info: MITSUBISHI LSI» „ iW U n a R v M 5 M 4 V 1 6 4 0 5 C J ,T P - 5 ,- 6 , - 7 , pB E - 5 S .- 6 S .- 7 S HYPER PAGE MODE 16777216-BIT 4194304-WORD BY 4-BIT DYNAMIC RAM DESCRIPTION This is a family of 4194304-word by 4-bit dynamic RAMs with Hyper Page mode fuction, fabricated with the high performance

Contextual Info: MEMORY jgggHÊÈIÊHÈlHÊÈÊHIÊÈÈËIMH V16400A-50/-60/-70 CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic DAM • DESCRIPTION The Fujitsu V16400A is a fully decoded CMOS Dynamic RAM; DR AM :Ifriat contains 16,777,216 memory cells accessible in 4-bit increments. The V16400A features,a “l i s t page” mode of operation whereby high­

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

Contextual Info: MEMORY CMOS 4 M x 4 BIT HYPER PAGE MODE DYNAMIC RAM V16405B-50/-60 CMOS 4,194,304 x 4 Bit Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu V16405B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The V16405B features a “hyper page” mode of operation whereby high­