SOJ26 Search Results

Contextual Info: SOJ26-P-300-1.27 Mirror finish 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 0.83 TYP. 1/Mar. 21, 2000

Contextual Info: 26P0J-B Weight g Lead Material Alloy 42 e b2 14 e1 19 HE 21 E 26 e1 c D Recommended Mount Pad Symbol 1 6 13 8 L A A1 b1 e y I2 JEDEC Code – I1 EIAJ Package Code SOJ26/24-P-300-1.27 Plastic 26pin 300mil SOJ b SEATING PLANE A A1 b b1 c D E e e1 HE L y b2

Contextual Info: SOJ26/24-P-300-1.27-3 Mirror finish 5 パッケージ材質 リードフレーム材質 端子処理方法・材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 42 アロイ 半田メッキ (≥5µm) 0.80 TYP. 5 版/96.12.5

Contextual Info: 26P0D-B JEDEC Code – Weight g Lead Material Alloy 42 b2 I1 e e1 HE 14 19 21 E 26 e1 c D Recommended Mount Pad Symbol 1 8 6 13 L A A1 b1 e y I2 EIAJ Package Code SOJ26/24-P-300-1.27 Plastic 26pin 300mil SOJ(LOC) b SEATING PLANE A A1 b b1 c D E e e1 HE L

SOJ26

Contextual Info: SOJ26/20-P-350-1.27 Mirror finish 5 パッケージ材質 リードフレーム材質 端子処理方法・材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 42 アロイ 半田メッキ (≥5µm) 1.01 TYP. 5 版/96.12.5

Contextual Info: SOJ26/24-P-300-1.27 Mirror finish 5 パッケージ材質 リードフレーム材質 端子処理方法・材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 42 アロイ 半田メッキ (≥5µm) 0.80 TYP. 5 版/96.12.5

Contextual Info: SOJ26-P-300-1.27 Mirror finish 5 パッケージ材質 リードフレーム材質 端子処理方法・材質 パッケージ質量 g 版数／改版日 エポキシ樹脂 42 アロイ 半田メッキ(≥5µm) 0.83 TYP. 1 版/00.3.21

Contextual Info: SOJ26/20-P-300-1.27 Mirror finish 5 パッケージ材質 リードフレーム材質 端子処理方法・材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 42 アロイ 半田メッキ (≥5µm) 0.80 TYP. 5 版/96.12.5

Contextual Info: SOJ26/24-P-300-1.27 Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.

SOJ26

Contextual Info: SOJ26/24-P-300-1.27-3 Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.

20-P-350

Contextual Info: SOJ26/20-P-350-1.27 Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.

26P0J

Contextual Info: 26P0J Plastic 26pin 300mil SOJ EIAJ Package Code SOJ26/20-P-300-1.27 JEDEC Code – Weight g 0.75 Lead Material Alloy 42 e b2 c e1 HE 14 18 22 E 26 e1 I1 I2 D Recommended Mount Pad Symbol 1 9 5 13 L A A1 b1 e y b SEATING PLANE A A1 b b1 c D E e e1 HE L y

SOJ26

Contextual Info: SOJ26/20-P-300-1.27 Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.

Contextual Info: SOJ26/20-P-350-1.27 Mirror finish 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 1.01 TYP. 5/Dec. 5, 1996

Contextual Info: SOJ26/24-P-300-1.27 Mirror finish 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 0.80 TYP. 5/Dec. 5, 1996

Contextual Info: SOJ26/20-P-300-1.27 Mirror finish 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 0.80 TYP. 5/Dec. 5, 1996

4A04I

Abstract: tc514100a
Contextual Info: TC51441OAP/AJ/ASJ/AZ—70, TC51441OAP/AJ/ASJ/AZ-80 TC51441OAP/AJ/ASJ/AZ-10 PRELIMINARY 1,048,576 W ORD x 4 BIT DYNAMIC RAM DESCRIPTION The TC51441 OAP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

Contextual Info: PRELIMINARY 4,194,304 WORD x 1 BIT DYNAMIC RAM DESCRIPTION The TC514101AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating m argins, both internally and to the system user.

TC5116400

Abstract: tc5116400csj 300D1 toshiba RAS-25
Contextual Info: INTEGRATED TOSHIBA TO SH IBA M O S DIGITAL NTEGRATED CIRCUIT CIRCUIT TECHNICAL T C 5 1 16 4 0 0 C S J / C S T - 4 0 T C 5 1 1 6 4 0 0 C S J / C S T - 50 T C 5 1 1 6 4 0 0 CSJ / C S T * 60 DATA SILICON GATE C M O S TENTATIVE D ATA 4,194,304 W O R D x 4 BIT D Y N A M IC R A M

TC51V16405

Abstract: TC51V16405c
Contextual Info: INTEGRATED TOSHIBA " O S H I B A MOS DIGITAL I NT EGR AT ED CIRCUIT ” 51 V 16405 C5JS CST5 - SO TCS1V1c405 CSJ S/CSTS- 60 CIRCUIT TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 4,194,304 W O RD x 4 BIT FAST PAGE DYNAM IC RAM DESCRIPTION The TC51V16405CSJS/CSTS is fast page dynamic RAM organized 4,194,304 words by 4 bits. The

A100COLUMN

Contextual Info: 4 ,1 9 4 ,3 0 4 W ORD x 1 BIT D Y N A M IC R A M * This is advanced information and specifica­ tions are subject to change without notice. DESCRIPTION The TC514101AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

tc51100ap

Abstract: DIP18-P-300E TC514100
Contextual Info: 4,1 94 ,3 0 4 W O R D X PRELIMINARY 1 BIT D Y N A M IC RAM DESCRIPTION The TC514100AF/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

TC514100

Abstract: 514100A
Contextual Info: 4,194,304 WORD X 1 BIT DYNAMIC RAM DESCRIPTION THE TC514100A is the new generation dynamic RAM organized 4,194,304 word by 1 bit. The TC514410ASJ/AZ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

KSR128

Abstract: a95x A348 20 pin
Contextual Info: TC514400ÂPL/ÂJL/ASJL/AZL-60 * This is advanced information and specifica­ tions are subject to change without notice. 1,048,576 W ORD x 4 BIT D YN A M IC RAM DESCRIPTION The TC514400APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 1,048,576 words by