THEMSM51 Search Results

MSM51V17805

Abstract: MSM51V17805DSL
Contextual Info: E2G0129-17-61 O K I Semiconductor MSM51V17805D/DSL 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM51V17805D/DSL is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17805D/DSL achieves high integration, high-speed operation,

MSM51V18165BSL

Abstract: S0j42-P-400-127 msm51v18165b
Contextual Info: O K I Semiconductor MSM5 1V18 1 65B/BSL_ E2G 0087-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM51 V18165B/BSL is a 1,048,576-word x 16-bit dynamic RAMfabricated in Oki's silicon-gate CMOS technology. The MSM51V18165B/BSL achieves high integration, high-speed operation, and

transistor sl 431

Abstract: ZIP40-P-475
Contextual Info: O K I Sem iconductor M S M 5 1 4 1 9 0 / S L _ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514190/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate theMSM51419 0 /SL is OKI's CMOS silicon gate process technology.

MSM5118165B

Abstract: TSOP 86 Package
Contextual Info: O K I Semiconductor MSM5118165B_ E2G 0055-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM5118165B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The MSM5118165B achieves high integration, high-speed operation, and low-power

V1640

Abstract: MSM51V16405D MSM51V16405DSL
Contextual Info: E2G0124-17-61 O K I Semiconductor MSM5 1V1 6 4 0 5 P/PSL 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM51 V16405D/DSL is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16405D/DSL achieves high integration, high-speed operation,

Contextual Info: E2G0133-17-61 O K I Semiconductor M S M 5 1 V 1 8 1 6 5 D / D This version: Mar. 1998 S L 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V18165D/DSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicongate CMOS technology. TheMSM51 V18165D/DSL achieves high integration, high-speed operation,

Contextual Info: O K I Semiconductor MSM5116160B_ E2G 0049-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM5116160B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The MSM5116160B achieves high integration, high-speed operation, and low-power

Contextual Info: OKI Semiconductor MSM5118160B_ E2G 0051-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM5118160B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The MSM5118160B achieves high integration, high-speed operation, and low-power

Contextual Info: E2G0122-17-61 O K I Semiconductor Thisversion:^ 1998 MSM51V16400D/DSL_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM51 V16400D/DSL is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16400D/DSL achieves high integration, high-speed operation,

Contextual Info: O K I Semiconductor MSM5 1 4 1 90/SL_ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514190/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate theMSM514190/SL is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSM51V17170 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM51 V17170 is a 1,048,576-word x 16-bit dynamic RAM fabricated inOKI'sCMOS silicon gate technology. The MSM51V17170 achieves high integration, high-speed operation, and low-power

TSOP 86 Package

Abstract: msm5116165b
Contextual Info: O K I Semiconductor MSM5116 16 5 B_ E 2 G 0 0 5 3 - 1 7 -4 1 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM5116165B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The MSM5116165B achieves high integration, high-speed operation, and low-power

MSM51V18165DSL

Contextual Info: E2G0133-17-61 O K I Semiconductor MSM5 1VI8 1 65 P/PSL 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESC R IPTIO N The MSM51V18165D/DSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicon­ gate CMOS technology. TheMSM51 V18165D/DSL achieves high integration, high-speed operation,

Contextual Info: O K I Semiconductor MSM5116 16 0 B_ E2G 0049-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM5116160B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The MSM5116160B achieves high integration, high-speed operation, and low-power

Contextual Info: A O K I Semiconductor MSM51V41OO/L/S L 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM51 V 4100/L/SL is a4,194,304-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V4100/L/SL achieves high integration, high-speed operation, and

Contextual Info: O K I Semiconductor MSM51 V17160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM51V17160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V17160 achieves high integration, high-speed operation, and low-power

51c464

Abstract: MSM51C464A MSM51C464A-10 ZIP20-P-400
Contextual Info: O K I Semiconductor MSM51C464A G5,536-Word x 4 'B it D Y N A M IC RA M DESCRIPTION The MSM51C464A is a new generation dynamic R A M organized as 65,536-woid x. 4-bit The technology used to fabricate theMSM51C464A is O K I's C M O S silicon gate process technology. The

Contextual Info: O K I Semiconductor MSM5116160 A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM5116160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160A achieves high integration, high-speed operation, and low-power

MAS 10 RCD

Abstract: 001T MSM51V1000A MSM51V1000A-10 MSM51V1000A-70 MSM51V1000A-80 ZIP20-P-400 IRC130
Contextual Info: O K I Semiconductor MSM51V1000A 1,048,576-Word x 1-Bit DYN A M IC RAM : FAST PAGE M O DE TYPE DESCRIPTION TheMSM51V1000A is a 1,048,576-word x 1-bit dynamic RAM fabricated inOKI'sCMOSsilicon gate technology. The MSM51V1000A achieves high integration, high-speed operation, and low-power

MSM5118160B

Contextual Info: OKI Semiconductor MSM5118160B_ E2G 0051-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM5118160B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The MSM5118160B achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5 1V18 1 65B/BSL_ E2G 0087-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM51 V18165B/BSL is a 1,048,576-word x 16-bit dynamic RAMfabricated in Oki's silicon-gate CMOS technology. The M SM 51V18165B/BSL achieves high integration, high-speed operation, and

Contextual Info: O K I Semiconductor MSM51 V16160 B/B8 L E 2 G 0 0 8 1 -17-41 1,048,576-Word x 16-Bit D YN A M IC RA M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V I6160B / BSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. TheMSM51 V I6160B/BSL achieves high integration, high-speed operation, and

Contextual Info: O K I Semiconductor MSM51V17160_ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM51 V17160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V17160 achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5118160 A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM5118160Aisa 1,048,576-word xl6-bitdynam ie RAM fabricated in OKI's CMOS silicon gate technology. The MSM5118160A achieves high integration, high-speed operation, and low-power