MSM51V Search Results

MSM51V16165D

Abstract: MSM51V16165DSL SOJ42-P-400-1
Contextual Info: Pr E2G0132-17-61 el im y 1,048,576-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V16165D/DSL is a 1,048,576-word ¥ 16-bit dynamic RAM fabricated in Oki's silicongate CMOS technology. The MSM51V16165D/DSL achieves high integration, high-speed operation,

MSM51V17805D

Abstract: MSM51V17805 MSM51V17805DSL
Contextual Info: Pr E2G0129-17-61 el im y 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V17805D/DSL is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17805D/DSL achieves high integration, high-speed operation,

MSM51V17800

Abstract: MSM51V17800DSL
Contextual Info: Pr E2G0127-17-61 el im y 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17800D/DSL is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17800D/DSL achieves high integration, high-speed operation,

msm51v17400d

Abstract: MSM51V17400 MSM51V17400DSL
Contextual Info: Pr E2G0123-17-61 el im y 4,194,304-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400D/DSL is a 4,194,304-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17400D/DSL achieves high integration, high-speed operation,

MSM51V17805

Abstract: MSM51V17805DSL
Contextual Info: E2G0129-17-61 O K I Semiconductor MSM51V17805D/DSL 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION MSM51V17805D/DSL is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17805D/DSL achieves high integration, high-speed operation,

MSM51V18165BSL

Abstract: S0j42-P-400-127 msm51v18165b
Contextual Info: O K I Semiconductor MSM5 1V18 1 65B/BSL_ E2G 0087-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM51 V18165B/BSL is a 1,048,576-word x 16-bit dynamic RAMfabricated in Oki's silicon-gate CMOS technology. The MSM51V18165B/BSL achieves high integration, high-speed operation, and

V1640

Abstract: MSM51V16405D MSM51V16405DSL
Contextual Info: E2G0124-17-61 O K I Semiconductor MSM5 1V1 6 4 0 5 P/PSL 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM51 V16405D/DSL is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16405D/DSL achieves high integration, high-speed operation,

Contextual Info: O K I Semiconductor MSM51V16170 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51 V16170isal ,048,576-word x 16-bit dy namic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16170 achieves high integration, high-speed operation, and low-power

MSM51V16805A

Contextual Info: • O K I Semiconductor_ M SM 51V16805A_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FA ST P A G E M O D E T Y P E WITH ED O DESCRIPTION The MSM51V16805A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16805A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16805A is

Contextual Info: O K I Semiconductor MSM5 1 V1 7 1 6 0 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESCR IPTIO N The MSM51V17160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V17160 achieves high integration, high-speed operation, and low-power

SOJ28-P-300-1

Abstract: MSM51V16800B MSM51V16800BSL
Contextual Info: O K I Semiconductor MSM5 1V16800B/BSL E2G0074-17-41 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 51V16800B/BSL is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16800B /B SL achieves high integration, high-speed operation, and

v17805

Abstract: MSM51V17805BSL msm51v17805b
Contextual Info: O K I Semiconductor MSM5 1V17805 B/BSL_ E 2 G 0 0 7 9 -1 7 -4 1 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The M SM 51V17805B/BSL is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17805B /B SL achieves high integration, high-speed operation, and

MSM51V16800BSL

Contextual Info: ¡ Semiconductor MSM51V16800B/BSL ¡ Semiconductor MSM51V16800B/BSL E2G0074-17-41 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16800B/BSL is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16800B/BSL achieves high integration, high-speed operation, and

MSM51V17100

Contextual Info: O K I Semiconductor MSM51V17100 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 51V 17I00 is a new generation dynam ic organized as 16,777,216-word x 1-bit. The technology used to fabricate the M SM 51V I7100 is OKI's CM O S silicon gate process technology.

Contextual Info: IC INFORMATION Function D RAM C MOS Type J 1/1 E AVX-MG2027ZF/XN/UC MSM51V17400F6TFT Model VCC 1 26 VSS DQ1 2 25 DQ4 DQ2 3 24 DQ3 we 4 23 cas ras 5 A0 9 22 oe A0-A10 : Address input : Row address strobe ras 21 A9 : Column address strobe input cas DQ1-DQ4 : Data input / output

Contextual Info: MSM51V16165B-60TS-K IL08 C-MOS 16 M 1,048,576 x 16 -BIT DRAM —TOP VIEW— 21 1 VDD I/O1 2 I/O2 3 I/O3 4 I/O4 5 6 VDD GND 50 22 49 I/O16 48 I/O15 47 I/O14 46 I/O13 GND 45 I/O6 8 43 I/O11 11 NC 42 I/O10 41 I/O9 NC 40 NC 36 16 NC 35 LCAS WE 17 34 UCAS RAS 18

A5 GNC

Abstract: TSOP32-P-4QO-K 51V17400 5116100
Contextual Info: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.

m51171

Contextual Info: OKI Semiconductor MSM51V17180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynam ic RA M organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is O K I's CM O S silicon gate process technology.

Contextual Info: PEDD51V18160F-01 1Semiconductor MSM51V18160F This version: May. 2000 Previous version :  Preliminary 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V18160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate

Contextual Info: PEDD51V17400F-01 1Semiconductor MSM51V17400F This version: May. 2000 Previous version :  Preliminary 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400F is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate

MSM51V4256A

Abstract: DIP20-P-300-2 MSM51V4256A-10 MSM51V4256A-70 MSM51V4256A-80 soj-12 weight
Contextual Info: E2G0057-17-41 ¡ Semiconductor MSM51V4256A ¡ Semiconductor This version: Jan. 1998 MSM51V4256A Previous version: May 1997 262,144-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V4256A is a 262,144-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS

Bv 42 transistor

Abstract: M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K
Contextual Info: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.

32-PIN

Abstract: A10E MSM51V16900-70 MSM51V16900-80
Contextual Info: O K I Semiconductor MSM51V16900_ 2,097,152-Word x 9-Bit D Y N A M IC R A M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V16900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51V16900 is OKI's CMOS silicon gate process technology.

7400A

Abstract: MSM51V17400A
Contextual Info: O K I Semiconductor M SM 51V17400A_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V17400A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V17400A is