mPC339c
Abstract: UPC272C MPC277G UPC319G MPC393G upc272g UPC271ED 14 pin ic dip UPC311C UPC319C
Contextual Info: SELECTION GUIDE Operating D EV IC E O R IG IN A L Temperature Range Î/PC271C - 2 0 ~ +70 /UPC271ED - 2 0 ~ +80 MPC271G 311 PACKAGE - 2 0 ~ +70 8 Pin Molded DIP 8 Pin Cavity DIP Single High Speed Precision 8 Pin Molded Flat 0 ~ +70 8 Pin Molded DIP MPC311G
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upc271cupc271edupc271gupc311c+10upc311gupc272cupc272dupc272gupc319cupc319gmpc339cmpc277gmpc393g14 pin ic dip
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MPC271
Abstract: PC271 UPC271 IIPC271EO LM311 Vo-35 UPC311
Contextual Info: MPC271 / 311 P re c isio n V o lt a g e C o m p a r a t o r s FEATURES G E N E R A L D E S C R IP T IO N The pPC271/3t1 are voltage comparators that nav* • Operate from single 5 V supply tnpct currents more than a hundred times lower than • Maximum input current 250 nA
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upc271upc311ppc271/3t1fipc271+6jipc311mpc271pc271iipc271eolm311vo-35
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uPC271
Abstract: MPC271 MPC311G PC271C
Contextual Info: MPCZ71 / 311 Precision Voltage Comparators GENERAL DESCRIPTION FEATURES The /iPC 271/311 are voltage com parators th a t has • Operates fro m single 5 V supply in p u t currents more than a hundred tim es low er than • M axim um in p u t current: 250 nA
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mpcz71upc271upc311jupc271+4mpcz71/311mpc271mpc311gpc271c
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mPC2712
Abstract: mPC2712T PC2713T IC-2950 MPC271 mPC2713 C10535E VP15-00-3 mPC2713T C6650
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC2713T 1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • High power gain : 29 dB TYP. @ f = 0.5 GHz • Excellent frequency response : 1.2 GHz TYP. @ 3 dB down below the gain at 0.1 GHz
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pc2713tpc2713t-e3mpc2712mpc2712t+7ic-2950mpc271mpc2713c10535evp15-00-3mpc2713tc6650
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MPC2710
Abstract: poly silicon resistor TA-295 trasistor mpc2710b trasistor power H1L-STD-883 UPC2710B uPC2710 X1011
Contextual Info: CORP. N.A . E , D.D. WED 09.21’94 11:15/ST. 1 1 : 1 2 / NO. 3301512-173 P, GET- Q ualification Test Results o n S i MMI C ( u s e N E S A T 3 P r o c e s s ) ^ ¿ 2 7 /o r Prepared on : September 8,1994 Prepared by : Taizo Kato Engineer Assistant Manager
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15/st19/st20/st21/st+10mpc2710poly silicon resistorta-295trasistormpc2710btrasistor powerh1l-std-883upc2710bupc2710x1011
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IC-2951
Abstract: mpc2714t C10535E VP15-00-3 C6650 P1243
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µ PC2714T 1.8 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • Low power consumption : 15 mW VCC = 3.4 V, ICC = 4.5 mA TYP. • High power gain : 11.5 dB TYP. @ f = 0.5 GHz
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pc2714tpc2714t-e3ic-2951mpc2714t+4c10535evp15-00-3c6650p1243
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PC2710TB
Abstract: MPC2710 C1f TRANSISTOR P12152E
Contextual Info: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT JU P C 2 7 1 0 T B 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The //PC2710TB is a silicon monolithic integrated circuits designed as PA driver for 900 MHz band cellular
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upc2710tbpc2710tbpc2710t/pc2710tb+3mpc2710c1f transistorp12152e
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DM 0565
Abstract: sony 1S1656 MPC271 DM211 DM-211 2sa844
Contextual Info: SONY CORP/COMPONENT PRODS HTE 0302303 D 0003151 DM-211 SO N Y. Magnetoresistance Element Description 3 «S O N Y Package Outline Unit: mm The DM -211 is a highly sensitive magneto resistance element, composed of an evaporated ferromagnetic alloy on a sillicon substrate.
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dm-21175mvp-p40d31s3mpc271+71s16562sa844150j100031smdm 0565sonydm211
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