P1243 Search Results

IC-2951

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT /¿PC 2714 T 1.8 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • Low power consumption 15 mW Vcc = 3.4 V, Icc = 4.5 mA TYP. • High power gain 11.5 dB TYP. @ f = 0.5 GHz

BS9733

Abstract: BS9734 P1264 SM transformer P1290 P1260 p1242
Contextual Info: EN ISO9001 DATA BUS TRANSFORMERS www.pascall.co.uk MIL-STD 1553 Data Bus Transformers 3Kohms minimum impedance at -55 ºC BS9000 release available for both leaded and surface mount packages Release to BS9720 Generic Specification full or basic assessment

IC-2952

Abstract: C10535E PPC2715T PPC2715T-E3 VP15-00-3 C6650
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PPC2715T 1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • Low power consumption : 15 mW VCC = 3.4 V, ICC = 4.5 mA TYP. • High power gain : 19 dB TYP. @ f = 0.5 GHz

a 1712 8pin

Abstract: C10535E VP15-00-3
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1679G 5 V-BIAS, +15.5 dBm OUTPUT, 1.8 GHz WIDEBAND Si MMIC AMPLIFIER DESCRIPTION The µPC1679G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +13 dBm TYP. output at 1 GHz, this IC is recommendable for transmitter

marking code C1G mmic

Abstract: 103 c1k marking code C1H mmic 104 c1k marking code C1L PC2711 UPC2712T UPC1688 POWER MINIMOLD marking code renesas
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

IC-2952

Abstract: C10535E PPC2715T PPC2715T-E3 VP15-00-3
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

277-121

Abstract: C10535E VP15-00-3
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY AMP INCORPORATED. C COPYRIGHT 19 4 LOC ,19 AD ALL RIGHTS RESERVED. D 1ST 47 R EV ISIO N S P LTR A P O S I T I O N #2 6.86 [. 270] D 4.51,1 77] 2.54 [. 100] i G RO UND BUS R E C E P T A C L E CO NT AC T

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

PC1676G

Abstract: PC2713T C1H mmic marking c1j upc2713t marking 331 6pin
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NDL7603P

Abstract: NDL7603P1 NDL7603P1C NDL7603P1D NDL7603P2 NDL7603P2C NDL7603PC NDL7603PD 10 gb laser diode
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

104 c1k capacitor

Abstract: 103 c1k capacitor UPC2712T marking code C1H mmic marking code C1G mmic uPC2749 equivalent 104 c1k marking code C1L UPC2713T transistor marking C2s
Contextual Info: Application Note USAGE AND APPLICATIONS OF 6-PIN MINI-MOLD, 6-PIN SUPER MINI-MOLD SILICON HIGH-FREQUENCY WIDEBAND AMPLIFIER MMIC µPC2711-15 µPC2745-49 µPC2791/92 µPC3210 Document No. P11976EJ2V0AN00 2nd edition Date Published May 1999 N CP(K) 1997

NDL7603P

Abstract: NDL7603P1 NDL7603P1C NDL7603P1D NDL7603P2 NDL7603P2C NDL7603PC NDL7603PD 10 gb laser diode
Contextual Info: DATA SHEET LASER DIODE NDL7603P Series 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE DESCRIPTION The NDL7603P Series is a 1 310 nm phase-shifted DFB Distributed Feed-Back laser diode module with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal

multiple wavelength laser att

Abstract: NDL7705P NDL7705P1 NDL7705P1C NDL7705P1D NDL7705P2 NDL7705P2C NDL7705PC NDL7705PD
Contextual Info: DATA SHEET LASER DIODE NDL7705P Series 1 500 nm OPTICAL FIBER COMMUNICATIONS InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE DESCRIPTION The NDL7705P Series is a 1 550 nm phase-shifted DFB Distributed Feed-Back laser diode module with optical isolator. Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode

IC-2952

Abstract: P12432EJ2V0DS00 ic2952
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT //PC2715T 1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • Low power consumption : 15 mW Vcc = 3.4 V, Icc = 4.5 mA TYP. • High power gain : 19 dB T Y P . @ f = 0.5 GHz

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT /¿ P C 2 7 1 4 T 1.8 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • Low power consumption 15 mW Vcc = 3.4 V, Icc = 4.5 mA TYP. • High power gain 11.5 dB TYP. @ f = 0.5 GHz

IC-2952

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿iPC 2715T 1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • Low p o w e r con sum p tion 15 m W Vcc = 3.4 V, Icc = 4.5 mA T Y P . • High po w e r gain

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT uPC2713T 1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • High power gain 29 dB TYP. @ f = 0.5 GHz • Excellent frequency response 1.2 GHz TYP. @ 3 dB down below the gain at 0.1 GHz

BS9733

Abstract: P1240 P1260 BS9720 P1264 P1243 BS9734 P-1240 mil-t-21038 BS9000
Contextual Info: Pascall's Quality System Is Registered Under BS EN ISO 9001 FM13274 BS EN ISO 9001 Pascall Electronics Ltd, Westridge Business Park, Cothey Way, Ryde, Isle of Wight, PO33 1QT UK POWER PRODUCTS Tel: +44 0 1983 817300 Fax: +44 (0) 1983 564708 MIL-STD 1553

Contextual Info: DATA SHEET LASER DIODE NDL7705P Series 1 500 nm OPTICAL FIBER COMMUNICATIONS InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE DESCRIPTION The NDL7705P Series is a 1 550 nm phase-shifted DFB Distributed Feed-Back laser diode module with optical isolator. Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode

IC-2952

Abstract: P12432EJ2V0DS00 ic2952
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT //PC 2 7 1 5 T 1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • Low power consumption 15 mW Vcc = 3.4 V, Icc = 4.5 mA TYP. • High power gain 19 dB TYP. @ f = 0.5 GHz

PC2713T

Abstract: 2713T UPC2713T-E3
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT / / P C 2713T 1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • High power gain 29 dB TYP. @ f = 0.5 GHz • Excellent frequency response 1.2 GHz TYP. @ 3 dB down below the gain at 0.1 GHz

OTTO push button switch 21649

Abstract: 4 pin tactile push button switch p8 otto otto switch t5 OTTO Controls 21649 otto switch 21649 P1-30088 OTTO 21649
Contextual Info: Catalog 110 OTTO ® Registered trademark of OTTO Engineering, Inc. All rights reserved. Publication 2007-01 Catalog 110 2 East Main Street • Carpentersville, IL 60110 Phone: 847.428.7171 • Fax: 847.428.1956 E-Mail: info@ottoexcellence.com • Internet: ottoexcellence.com

BS9733-F0001-XXXX

Abstract: BS9733 l441 P1264 P1260 BS9734 STANAG-3910
Contextual Info: DATA BUS TRANSFORMERS INPUT MIL-STD 1553 Key Features: BS RELEASE ON SURFACE MOUNT • 3kohms minimum impedance at -55˚C • BS9000 release available for both leaded and surface mount packages • Release to BS9720 Generic Specification full or basic assessment available