PC2713T Search Results

Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿iPC3210TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The ^¡PC3210TB is a silicon monolithic integrated circuits designed as w ideband amplifier. The ^¡PC3210TB is suitable to system s required w ideband operation from HF to L band.

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿ iP C 3 2 1 0 T B 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The ^¡PC3210TB is a silicon monolithic integrated circuits designed as wideband amplifier. The ^¡PC3210TB is suitable to systems required wideband operation from HF to L band.

Contextual Info: 1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2710T PC2713T FEATURES • FR EQUENCY RESPONSE: 1.5 GHz • HIGH GAIN: 33 dB UPC2710T • SATURATED OUTPUT POWER: +13.5(UPC2710T) m TJ • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE Ô . SV SINGLE SUPPLY VOLTAGE

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿ iP C 3 2 1 0 T B 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The ^¡PC3210TB is a silicon monolithic integrated circuits designed as wideband amplifier. The ^¡PC3210TB is suitable to systems required wideband operation from HF to L band.

PC1676G

Abstract: PC2713T C1H mmic marking c1j upc2713t marking 331 6pin
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

marking C1C

Abstract: c1j marking transistor marking C2s uPC2713 PC2713T PC1676G c1a c1b c1c uPC2713T-E3 50C24
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2713T 5 V, SILICON MMIC VHF-UHF WIDEBAND AMPLIFIER DESCRIPTION The µPC2713T is a silicon monolithic integrated circuit designed as 2nd IF buffer amplifier for DBS tuners. This IC is manufactured using NEC’s 20 GHz fT NESAT

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC2713T 1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • High power gain 29 dB TYP. @ f = 0.5 GHz • Excellent frequency response 1.2 GHz TYP. @ 3 dB down below the gain at 0.1 GHz

PC2713T

Abstract: 2713T UPC2713T-E3
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT / / P C 2713T 1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • High power gain 29 dB TYP. @ f = 0.5 GHz • Excellent frequency response 1.2 GHz TYP. @ 3 dB down below the gain at 0.1 GHz

mPC2712

Abstract: mPC2712T PC2713T IC-2950 MPC271 mPC2713 C10535E VP15-00-3 mPC2713T C6650
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT
PC2713T 1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • High power gain : 29 dB TYP. @ f = 0.5 GHz • Excellent frequency response : 1.2 GHz TYP. @ 3 dB down below the gain at 0.1 GHz

PC2713T

Contextual Info: 1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC271OT PC2713T FEATURES_ • FREQUENCY RESPONSE: 1.5 GHz • HIGH GAIN: 33 dB UPC2710T • SATURATED OUTPUT POWER: +13.5 (UPC2710T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE