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    TL112 Search Results

    TL112 Datasheets (1)

    Essentra Components Catalog
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TL-1125
    Essentra Components Catalog Clamps and Clips, Cables, Wires - Management, TWIST-LOK 2.19" Original PDF 1
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    TL112 Price and Stock

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    Essentra Components TL-1125

    Cable Management, Twist Lock Nylon 6/6 Natural 30.2mm
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    Verical TL-1125 2,000 1,000
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    Mouser Electronics TL-1125 1,000
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    Newark TL-1125 Bulk 701 1
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    Onlinecomponents.com TL-1125 2,014
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    DB Roberts TL-1125
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    Lite-On Semiconductor Corporation LTL-11201KG

    N/D LTL-11201KG LIGHT BAR - Rail/Tube (Alt: LTL-11201KG)
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    Avnet Americas LTL-11201KG Tube 12 Weeks 1,000
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    Mini-Circuits ADTL1-12+

    Audio Transformers / Signal Transformers RF XFMR / SURF MOUNT / RoHS
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    Mouser Electronics ADTL1-12+ 807
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    Bristol Electronics ADTL1-12+ 57
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    Honeywell Sensing and Control 2TL1-12

    Toggle Switches Toggle DPDT 3 Pos 15A
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    Mouser Electronics 2TL1-12 171
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    Newark 2TL1-12 Bulk 1
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    RS 2TL1-12 Bulk 41 19 Weeks 1
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    TME 2TL1-12 185 4
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    Powell Electronics 2TL1-12 17 1
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    Honeywell Sensing and Control 4TL1-12A

    Toggle Switches Sealed OI/TL TOGGLES
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    Mouser Electronics 4TL1-12A 52
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    RS 4TL1-12A Bulk 11 100 Weeks 1
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    TME 4TL1-12A 50
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    Powell Electronics 4TL1-12A 1 1
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    TL112 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TL205

    Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147
    Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's


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    ptfc260202fc10-watth-37248-4tl205+8tl2322ro4350tl233tl241587-1818-2-ndc201017 c202tl147 PDF

    transistor TL131

    Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
    Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


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    ptfb212507sh200-watth-34288g-4/2transistor tl131+8tl231tl127tl130tl131transistor tl1208c802tl-130lm78l05acmnd PDF

    TL1 series

    Abstract: TL112 tl117 TL119 TL113 TL1-01 TL1-02 TL1-03 TL1-06 TL1-07
    Contextual Info: TL1 Series Toroids C 1 F D 2 B A E 2E COIL INSTALLED N MOUNT STANDARD PACKAGE A Mount - 1 Mount - 2 Mount - 3 Mount - 4 Mount - 5 .340 .450 .450 .600 .700 B C NOMINAL .60 .65 .85 .95 1.25 NOMINAL ± .005 .578 .648 .828 .948 1.248 D .29 .325 .415 .475 .625


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    tl1-18tl1-19tl1-16tl1-17+11tl1-12tl1 seriestl112tl117tl119tl113tl1-01tl1-02tl1-03tl1-06tl1-07 PDF

    c102 TRANSISTOR

    Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
    Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


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    ptfa220121m12-wattpg-son-10c102 transistor+8nfm18ps105r0j3tl111transistor c802tl204tl231c801tl-205atl113 PDF

    tl249

    Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242
    Contextual Info: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


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    ptfb182503elptfb182503fl240-watth-33288-6+10h-34288-6tl249tl2472tl244transistor tl131tl251tl239ptfb182503tl250tl242 PDF

    TL235

    Contextual Info: PTVA030121EA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency


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    ptva030121eah-36265-2tl235 PDF

    Contextual Info: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.


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    ptfa091503el150-watth-33288-6 PDF

    LM7805ACH-ND

    Abstract: TL174 tl173 PTVA035002EV V1
    Contextual Info: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features


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    ptva035002evh-36275-4a03500250stances+4lm7805ach-ndtl174tl173ptva035002ev v1 PDF

    C109 ceramic capacitor

    Abstract: TL235
    Contextual Info: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


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    ptfb213208fvptfb213208sv320-watth-34275g-6/2+2c109 ceramic capacitortl235 PDF

    PTFB212507SH

    Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


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    ptfb212507sh200-watt PDF

    TRANSISTOR tl131

    Abstract: tl239
    Contextual Info: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include


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    ptfb082817fhh-34288-4/2transistor tl131tl239 PDF

    C205

    Contextual Info: PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications


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    ptfb191501eptfb191501f150-watth-36248-2+2h-37248-2c205 PDF

    PTFB090901EA

    Contextual Info: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced


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    ptfb090901eaptfb090901fa90-watth-37265-2 PDF

    TL272

    Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
    Contextual Info: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


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    ptma080304m20-leadpg-dso-20-63tl272+9tl184tl181tl271tl308tl187 transistortl274tl293tl193tl148 PDF

    TL145

    Abstract: TL245 transistor c111 C216 TL152
    Contextual Info: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960


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    ptfb093608fvh-37275-6/2tl145tl245+3transistor c111c216tl152 PDF

    fet 4712

    Abstract: NFM18PS105R0J30 ptfb193404f LM780L05ACM-ND R804 4712 tl2032 mp 1046 TL1013 0805W220JT
    Contextual Info: PTFB193404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990


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    ptfb193404f340-watth-37275-6/2p03-a+9fet 4712nfm18ps105r0j30lm780l05acm-ndr8044712tl2032mp 1046tl10130805w220jt PDF

    TL225

    Abstract: ATC100A6R2CW150X
    Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


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    ptfa220121m12-wattpg-son-10tl225+1atc100a6r2cw150x PDF

    TRANSISTOR tl131

    Abstract: ptfb192503 tl134 TL105B PTFB182503FL TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117
    Contextual Info: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


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    ptfb182503elptfb182503fl240-watttransistor tl131+8ptfb192503tl134tl105btl231ptfb192503el v1c103 transistorro4350tl117 PDF

    TRANSISTOR tl131

    Abstract: tl134 PTFB212503FL tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA
    Contextual Info: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power


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    ptfb212503elptfb212503fl240-watttransistor tl131+8tl134tl127tl234tl107tl117atc100b6r2tl227c103 transistor data PDF

    hy 1418

    Abstract: tl117 tl111
    Contextual Info: TL1 Series Toroids 1 C F E 2E 2 D A B COIL INSTALLED N MOUNT STANDARD PACKAGE A Mount - 1 Mount - 2 Mount - 3 Mount - 4 Mount - 5 .340 .450 .450 .600 .700 B C NOMINAL .60 .65 .85 .95 1.25 NOMINAL ± .005 .578 .648 .828 .948 1.248 D E TYPICAL .110 .150 .150


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    tl1-01tl1-02tl1-03tl1-04+9tl1-05tl1-06tl1-07tl1-08tl1-09tl1-10hy 1418tl117tl111 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    p462-ndp463-ndlng295lfcp2ulng395mftp5u+11us2011schematic diagram atx power supply 500wpioneer pal 012a1000w inverter pure sine wave schematic diagram600va numeric ups circuit diagramswinbond bios 25064tle 9180 infineonsmsc mec 1300 nutbe schematic diagram inverter 2000wdk55circuit diagram of luminous 600va ups PDF

    PTFB090901EA

    Contextual Info: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


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    ptfb090901eaptfb090901fa90-watth-37265-2 PDF

    c102 TRANSISTOR

    Abstract: LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PTFA220041M
    Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


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    ptfa220041mpg-son-10c102 transistorlm7805 m smd+7r804c103 transistortransistor c107 mtransistor c801nfm18ps105r0j3transistor c104tl217 PDF

    TL139

    Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
    Contextual Info: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


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    ptfb183404f340-watth-37275-6/2tl139+9ptfb183404ptfb183404eftl148transistor tl131tl162tl170tl172c105 transistortl145 PDF