PTFA220041M Search Results

PTFA220041M Datasheets (6)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
PTFA220041M		Infineon Technologies	General Purpose Transistors; Package: PG: PG-SON-10; Flange Type: Surface Mount; Matching: None; Frequency Band: 700.0 - 2,200.0 MHz; P_1dB (typ): 5.0 - 5.0 W; Supply Voltage: 28.0 - 28.0 V	Original	PDF	399.26KB	12
PTFA220041MV4		Infineon Technologies	RF FETs, Discrete Semiconductor Products, FET RF LDMOS 4W SON10	Original	PDF		18
PTFA220041M-V4		Wolfspeed	FET RF LDMOS 4W SON10	Original	PDF	331.7KB
PTFA220041M-V4-R1K		Wolfspeed	RF MOSFET TRANSISTORS	Original	PDF	331.7KB
PTFA220041MV4R1KXUMA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET TRANSISTORS	Original	PDF	328.57KB
PTFA220041MV4XUMA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF LDMOS 4W SON10	Original	PDF	328.57KB

PTFA220041M Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
c102 TRANSISTOR Abstract: LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PTFA220041M Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency	Original	ptfa220041m pg-son-10 c102 transistor lm7805 m smd +7r804 c103 transistor transistor c107 m transistor c801 nfm18ps105r0j3 transistor c104 tl217	PDF
transistor c735 Abstract: ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103 Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency	Original	ptfa220041m pg-son-10 transistor c735 atc100a120fw150xb +8transistor c104 tl107 c103 m transistor c103 transistor transistor c802 c735 transistor transistor c107 transistor c103	PDF
SMD r801 Abstract: TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223 Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,	Original	ptfa220041m smd r801 tl217 tl218 +7tl2082 transistor c801 c803 r804 3224w-202ect-nd transistor c803 tl223	PDF
c102 TRANSISTOR Abstract: tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR PTFA220041M TL108 tl111 Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency	Original	ptfa220041m c102 transistor tl113 c103 transistor +6transistor c104 nfm18ps105r0j3 c103 transistor equivalent c104 transistor tl108 tl111	PDF
Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power ampliier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,	Original	ptfa220041m pg-son-10	PDF
PTFB090901EA Contextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB	Original	ptva093002tc 960mhz 758mhz pxac201602fc +62025mhz h-49248h-4 h-37248-4 400mhz 2700mhz ptfb090901ea	PDF
PTFA142401EL Abstract: PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E Contextual Info: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly	Original	ptfa041501e ptfa041501f ptfa070601e pg-dso-20-63 +13pg-son-10 h-33265-8 h-34265-8 h-36248-2 h-37248-2 h-36260-2 ptfa142401el ptfa070601f ptfa071701e ptfa071701f ptfa072401el ptfa072401fl ptfa080551e	PDF
PTFA041501E Abstract: PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL Contextual Info: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly	Original	ptfa041501e ptfa041501f ptfa070601e 725-7452fl +13pg-dso-20-63 pg-son-10 h-33265-8 h-34265-8 h-36248-2 h-37248-2 ptfa220121m ptfb241402f ptfa070601f ptfa071701e ptfa071701f ptfa072401el ptfa072401fl	PDF