RCA8203B
Abstract: texas instruments tip105 SE9402 2N6042 MJE6042 TIP101 TIP102 TIP105 TIP106 TIP107
Contextual Info: TEXAS IN S TR -COPTO} ti 5^61726 T E X A S INSTR DE~| 0Ttil7St3 D03tfl7t, □ COPTO “ 62C 3 6 8 7 6 TIP105, TIP106, TIP107 P-N-P DARLINGTON CONNECTED SILICON POWER TRANSISTORS R E V IS E D O C TO B E R 1 9 8 4 Designed for Complementary Use with TIP100, TIP101, TIP102
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q03ba7btip105tip106tip107+7tip101tip1022n6042se9402mje6042rca8203btexas instruments tip105
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MJE6045
Abstract: SE9302 texas instruments tip102 T0-22Q TIP101 TEXAS INSTRUMENTS TIP105 texas instruments tip100 transistor 1251 n-p-n 2N6388 TIP102
Contextual Info: bH TEXAS I N S T R -COPTO} 0D3bö7D □ 896-1726 TEXAS INSTR OPTO 62C 3Ó870 TIP100, TIP101, TIP102 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS JA N U A R Y 1 9 7 7 - R E V IS E D O C TO B E R 1 9 8 4 • Designed for Complementary Use with TIP105, TIP106, TIP107
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03kifi7dtip100tip101tip102+14t-33-29tip105tip106tip107minhfeof200at4v2n6045mje6045se9302texas instruments tip102t0-22qtexas instruments tip105texas instruments tip100transistor 1251 n-p-n2n6388
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T1P102
Contextual Info: bH TEXAS I N S T R -COPTO} Ï Ë J Ö lbl7ab 896-1726 TEXAS INSTR OPTO 0D3bö7D □ 62C 3Ó870 TIP100, TIP101, TIP102 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS _ J A N U A R Y 1 9 7 7 - RE V ISE D OCTO BER 1 9 84 • Designed for Complementary Use with TIP105, TIP106, TIP107
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tip100tip101tip102tip105+5tip106tip1072n60452n6388t1p102
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TIP107 Texas
Contextual Info: TEXAS INSTR -COPTO} "B 961726 b5 TEXAS IN S T R D eT| flit 1 75b Q03ba7t, 0 COPTOT 62C 3 6 8 7 6 TIP 105, TIP106, TIPI 07 P-N-P DARLINGTON CONNECTED SILICON POWER TRANSISTORS R E V IS E D O C T O B E R 1 9 8 4 Designed for Complementary Use with TIPIOO, T IP 101, TIP102
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q03ba7ttip106tip102-220ab+5t-33-31se9402rca8203btip105tip107 texas
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2sc-144
Abstract: 2SC105 BUX98A pin configuration NPN transistor tip41c BU326 BU108 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc
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tip100tip105tip101tip106+10tip102tip107220ab2sc-1442sc105bux98apin configuration npn transistor tip41cbu326bu108bu100
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TI494
Abstract: THP47 TF80 siemens TE3904 TI381 TIP-24 TF260 TI389 TI-494 TH415
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 25 30 35 40 (A) ESM952 ESM752A ESM952A BOY57A BOY57A BOY58R BOY58R PT9847 2SG3240 PT9785 C04262 SSP70 TIP35 1763-0420 1768-0420 SOT79821 SOT79821 B0249 2N1830 2N2130 SSP70A TIP35A B0249A 2N5885 SOT79822
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tc15-1000tc15u10002sc2904s01540-3+16s01540-8s01541-1pt8854pt8854apt8865sgsf662ti494thp47tf80 siemenste3904ti381tip-24tf260ti389ti-494th415
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TRANSISTOR C 3807
Abstract: BU108 2SA1046 2N5034 package motorola 2n5303 2Sd331 npn transistor 724 motorola NPN Transistor with heat pad transistor TIP107 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJF6388* PNP MJF6668* Complementary Power Darlingtons For Isolated Package Applications *Motorola Preferred Devices Designed for general–purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink
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mjf6388mjf66682n63882n6668+16tip102tip107e69369tip73btip74tip74atransistor c 3807bu1082sa10462n5034 packagemotorola 2n53032sd331 npn transistor724 motorola npn transistor with heat padtransistor tip107bu326bu100
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2N3055 TO220
Abstract: BD130 NPN Transistor BD241 3221 3900 2SA49 bipolar transistor td tr ts tf MJE350 equivalent SE9302 MJE2482 2SC1419
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP29B TIP29C PNP TIP30B TIP30C Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. Compact TO–220 AB package. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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tip29btip30btip29ctip30c+16tip73btip74tip74atip74btip75tip75a2n3055 to220bd130npn transistor bd2413221 39002sa49bipolar transistor td tr ts tfmje350 equivalentse9302mje24822sc1419
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2SA1046
Abstract: TIP147 pwm BU108 TO218 20A Darlington BU326 BU100 MJ423 motorola transistor 2N6547
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6547 Data Sheet Designer's Switchmode Series NPN Silicon Power Transistors The 2N6547 transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 and
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2n6547case32tip73btip74+13tip74atip74btip75tip75atip75b2sa1046tip147 pwmbu108to218 20a darlingtonbu326bu100mj423motorola transistor 2n6547
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mj15003 equivalent
Abstract: 2n3055 MJ15003 2N3055 BU108 motorola MJ15003 BDX54 MJ15004 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon Power Transistors MJ15003* PNP MJ15004* The MJ15003 and MJ15004 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —
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mj15003mj15004tip73btip74+12tip74atip74btip75tip75amj15003 equivalent2n3055 mj150032n3055bu108motorola mj15003bdx54bu326bu100
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2SC2246
Abstract: 2SD669 equivalent RCA1C03 BUW84 BD875 equivalent 2N6407 BU108 2N6026 2SD1178 NSD134
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–speed switching motor control applications. • Similar to the Popular NPN 2N6282, 2N6283, 2N6284 and the PNP 2N6285,
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2n62822n62832n62842n6285+162n62862n6287tip73btip74tip74atip74b2sc22462sd669 equivalentrca1c03buw84bd875 equivalent2n6407bu1082n60262sd1178nsd134
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transistor 2SA1046
Abstract: 2SC106 BD262 2SC1419 SE9302 2N6107 BD263 ST T4 3580 FT48 MJE34 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP33B* TIP33C PNP TIP34B* TIP34C Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • • • • 10 A Collector Current Low Leakage Current — ICEO = 0.7 mA @ 60 V
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tip33btip33ctip34btip34c+16tip73btip74tip74atip74btip75tip75atransistor 2sa10462sc106bd2622sc1419se93022n6107bd263st t4 3580ft48mje34 equivalent
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BU108
Abstract: 2SA1046 BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5745 See 2N4398 2N5758 High-Voltage High-Power Silicon Transistors 6 AMPERE POWER TRANSISTOR NPN SILICON 100 – 140 VOLTS 150 WATTS . . . designed for use in high power audio amplifier applications and high voltage
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BU108
Abstract: 2SD1816 BDX54 motorola MJ3000 MJD42C equivalent BU326 BU100 2N5631
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD180 Plastic Medium Power Silicon PNP Transistor 3.0 AMPERES POWER TRANSISTOR PNP SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
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2SA1046
Abstract: 2N3055 BU108 transistor K 3596 BU326 BU100 TL MJE2955T MJE3055T 2N3174 2SC936
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6251 High Voltage NPN Silicon Power Transistors 15 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 175 WATTS . . . designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications.
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2n6251tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n64882sa10462n3055bu108transistor k 3596bu326bu100tl mje2955tmje3055t2n31742sc936
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BUS48AP
Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
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MJ2955 replacement
Abstract: BU108 2SA1046 MJE172 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5038* 2N5039 NPN Silicon Transistors *Motorola Preferred Device . . . fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide–band amplifiers and power oscillators in
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2n50382n5039tip73btip74+12tip74atip74btip75tip75atip75btip75cmj2955 replacementbu1082sa1046mje172bu326bu100
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BU108
Abstract: BDT3 2SC1943 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE8503A* Advance Information SWITCHMODE Series *Motorola Preferred Device NPN Bipolar Power Transistor POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS — BVCES 80 WATTS The MJE8503A transistor is designed for high voltage, high speed, power switching
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TRANSISTOR BC 208
Abstract: 2N3055 BU108 Mje350 2SB527 BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE3439 NPN Silicon High-Voltage Power Transistors 0.3 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 15 WATTS . . . designed for use in line–operated equipment requiring high fT. • High DC Current Gain hFE = 40 – 160 @ IC = 20 mAdc
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MJ4502 EQUIVALENT
Abstract: BU108 BU806 Complement BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ4502 High-Power PNP Silicon Transistor 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — hFE = 25 – 100 @ IC = 7.5 A
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bd249c equivalent
Abstract: MJ15003 300 watts amplifier BU108 mje13009 equivalent BDX54 bd139 equivalent transistor Motorola case 77 tip122 D-PAK package 2SB56 BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE5730 MJE5731 MJE5731A High Voltage PNP Silicon Power Transistors . . . designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. • • • • 1.0 AMPERE
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tip47tip50mje5730mje5731+16mje5731atip73btip74tip74atip74btip75bd249c equivalentmj15003 300 watts amplifierbu108mje13009 equivalentbdx54bd139 equivalent transistormotorola case 77tip122 d-pak package2sb56bu326
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BU108
Abstract: D44C12 BDX54 electronic ballast with MJE13003 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18002D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP*, to design
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equivalent transistor TIP3055
Abstract: BD4185 BDW59 BD139.10 equivalent transistor TIP2955 TIP2955 application note BD139.6 BD139.16 2n3055 replacement 2SC1237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP3055 PNP TIP2955 Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20 – 70 @ IC = 4.0 Adc • Collector–Emitter Saturation Voltage — VCE sat = 1.1 Vdc (Max) @ IC = 4.0 Adc
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tip3055tip2955tip73btip74+16tip74atip74btip75tip75atip75btip75cequivalent transistor tip3055bd4185bdw59bd139.10equivalent transistor tip2955tip2955 application notebd139.6bd139.162n3055 replacement2sc1237
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2SC1943
Abstract: 2n5037 2SC2322 2sa1046 bd349 bD127 BUV18A 2SC1903 mje5195 2SD341
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Advance Information Complementary Silicon Power Transistors The MJ15011 and MJ15012 are PowerBase power transistors designed for high–power audio, disk head positioners, and other linear applications. These devices
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