TGA1073A Search Results

GaAs pHEMT MMIC medium power amplifier

Abstract: TGA1073A TGA1073A-SCC
Contextual Info: Product Datasheet August 15, 2000 26- 34 GHz Medium Power Amplifier TGA1073A-SCC Key Features and Performance • • • • • • 0.25 um pHEMT Technology 19 dB Nominal Gain 25 dBm Nominal Pout @ P1dB -34.5 dBc IMR3 @ 15.5 dBm SCL Bias 5 - 7V @ 220 mA

Contextual Info: TriQuint <+ Advance Product Information SEMICONDUCTOR* 26- 34 GHz Medium Power Amplifier TGA1073A Prototype Part #, Production Part # TBD Key Features and Performance 0.25 um pHEMT Technology 19 dB Nominal Gain 25 dBm Nominal Pout @ P1dB -34.5 dBc IMR3 @ 15.5 dBm SCL

TGA1073A

Abstract: TGA1073A-SCC
Contextual Info: Product Data Sheet November 6, 2002 26 - 35 GHz Medium Power Amplifier TGA1073A-SCC Key Features and Performance • • • • • • 19 dB Nominal Gain 25 dBm Nominal Pout @ P1dB -34.5 dBc IMR3 @ 15.5 dBm SCL Bias 5 - 7 V @ 220 mA 0.25-µm mmW pHEMT 2MI Technology

TGA1073A

Abstract: 75TH
Contextual Info: Advance Product Information 26- 34 GHz Medium Power Amplifier TGA1073A Prototype Part #, Production Part # TBD Key Features and Performance • • • • • • 0.25 um pHEMT Technology 19 dB Nominal Gain 25 dBm Nominal Pout @ P1dB -34.5 dBc IMR3 @ 15.5 dBm SCL

Contextual Info: TriQuint SEMICONDUCTOR. Advance Product Information 26- 34 GHz Medium Power Amplifier TGA1073A Prototype Part #, Production Part # TBD Key Features and Performance 0.25 um pHEMT Technology 19 dB Nominal Gain 25 dBm Nominal Pout @ P1dB -34.5 dBc IMR3 @ 15.5 dBm SCL

TGA1073G

Abstract: 75TH TGA1073A TGA1073B TGA1073C
Contextual Info: TriQuint mmWave MMICs Statistical Performance Summary September 11, 2000 TGA1135 statistical performance summary Page 1 TGA1073A Statistical On-Wafer Performance Summary 24 22 -5 20 5th 18 25th 50th 16 75th 14 95th Input Return Loss dB Gain (dB) 3 Lots, 14 Wafers, 11792 Samples

oq 051

Abstract: um 741 TGA1073A TGA1073A-EPU
Contextual Info: TrìQuint SEMICONDUCTOR* Advance Product Information 26- 34 GHz Medium Power Amplifier TGA1073A Prototype Part #, Production Part # TBD Key Features and Performance • • • • • • 0.25 um pHEMT Technology 19 dB Nominal Gain 25 dBm Nominal Pout @ P1dB

TGA1073A

Abstract: TGA1073A-SCC
Contextual Info: Product Datasheet April 9, 2001 26- 34 GHz Medium Power Amplifier TGA1073A-SCC Key Features and Performance • • • • • • 0.25 um pHEMT Technology 19 dB Nominal Gain 25 dBm Nominal Pout @ P1dB -34.5 dBc IMR3 @ 15.5 dBm SCL Bias 5 - 7V @ 220 mA Chip Dimensions 1.95 mm x 1.12 mm

TGA1073A

Abstract: TGA1073A-SCC
Contextual Info: Product Data Sheet July 1, 2002 26- 35 GHz Medium Power Amplifier TGA1073A-SCC Key Features and Performance • • • • • • 0.25 um pHEMT Technology 19 dB Nominal Gain 25 dBm Nominal Pout @ P1dB -34.5 dBc IMR3 @ 15.5 dBm SCL Bias 5 - 7V @ 220 mA Chip Dimensions 1.9 mm x 1.1 mm

Contextual Info: Product Datasheet March 6th, 2001 26- 36 GHz Medium Power Amplifier TGA1073A-SCC Key Features and Performance • • • • • • 0.25 um pHEMT Technology 19 dB Nominal Gain 25 dBm Nominal Pout @ P1dB -34.5 dBc IMR3 @ 15.5 dBm SCL Bias 5 - 7V @ 220 mA

ka band high power fet amplifier schematic

Contextual Info: 0.25-µm mmW pHEMT 2MI Process Data Sheet 4.6 µm PLATING CAP TOP PLATE 2000 Å NITRIDE 0.75 µm FIRST METAL TaN RESISTOR T-GATE ACTIVE REGION OHMIC METAL EXCEPT VIA SEMI-INSULATING GaAs SUBSTRATE VIA UNDER CAP 0.25-µm 2MI Process Cross Section General Description

TGA2517

Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
Contextual Info: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint

12 volt-30 amp power diode

Abstract: ka-band amplifier high power fet amplifier schematic fet ft 30 GHZ ka band high power fet amplifier schematic pHEMT transistor ka-band mixer 10 ghz driver amplifier FET differential amplifier circuit Ka-band
Contextual Info: 0.25-µm mmW pHEMT 2MI Process Data Sheet 4.6 µm PLATING CAP TOP PLATE 2000 Å NITRIDE 0.75 µm FIRST METAL TaN RESISTOR T-GATE ACTIVE REGION OHMIC METAL EXCEPT VIA SEMI-INSULATING GaAs SUBSTRATE VIA UNDER CAP 0.25-µm 2MI Process Cross Section General Description

TGA2519-SG

Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
Contextual Info: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m

TG2H214220-FL

Abstract: TGA2572 TGA2573 lte transceiver TGA2540-FL TQM963014 TGA2517 TQM6M9069 TQP6M9002 TQM7M5013
Contextual Info: Product Selection Guide Choose TriQuint’s Innovative RF Solutions Connecting the Digital World to the Global Network Welcome to Our Product Selection Guide Table of Contents About TriQuint Semiconductor.3 Guide by Market Automotive. 4

ka band lna

Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
Contextual Info: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: info-mmw@tqs.com Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for

TGA2517

Abstract: TGA2540-FL TGA2573 TQM7M5013 TQP6M9002 tga2540 tqp340003 TQM726018 QFN28 6x6 TQM679002A
Contextual Info: May 2010 Product Selection Guide Amplifiers Control Products Filters Integrated Products Optical Components Connecting the Digital World to the Global Network Table of Contents ABOUT TRIQUINT SEMICONDUCTOR .2 GUIDE BY MARKET Automotive . 4