TGF4260 Search Results

Contextual Info: H I U I N S E M I C O N D U C T O R , T IQSt 9.6mm Discrete HFET TGF4260-EPU 9600 pm x 0.5 pm Nominal Pout of 37-dBm at 6.0 GHz Nominal Gain of 9.5-dB at 6.0 GHz # Nominal PAE of 52% at 6.0 GHz % Suitable for high reliability applications # 0,572 x 2,324 x 0,102 mm

TGF4260-EPU

Contextual Info: H I Q U I N S T E M I C O N D U C T R , I N C 4260 9.6mm Discrete HFET TGF4260-EPU O n 9600 pm x 0.5 pm Nominal Pout of 37-dBm at 6.0 GHz Nominal Gain of 9.5-dB at 6.0 GHz # Nominal PAE of 52% at 6.0 GHz Suitable for high reliability applications # 0,572 x 2,324 x 0,102 mm

TGF4260-EPU

Contextual Info: R I Q U I N T S E M I TGF4260-EPU C O N D U C 9.6mm Discrete HFET ● ● ● ● ● ● T O R , I N C . 4260 9600 m x 0.5 m Nominal Pout of 37 - dBm at 6.0 GHz Nominal Gain of 9.5 - dB at 6.0 GHz Nominal PAE of 52 % at 6.0 GHz Suitable for high reliability applications

1FT sot23-6

Abstract: TGF4260 TGF4260-SCC UM 7108 F
Contextual Info: Product Data Sheet March 31, 2003 9.6 mm Discrete HFET TGF4260-SCC Key Features and Performance • • • • • • • 9600 µm x 0.5 µm HFET Nominal Pout of 37dBm at 6 GHz Nominal Gain of 9.5dB at 6 GHz Nominal PAE of 52% at 6 GHz Frequency Range: DC - 10.5 GHz

Contextual Info: Product Data Sheet March 31, 2003 9.6 mm Discrete HFET TGF4260-SCC Key Features and Performance • • • • • • • 9600 µm x 0.5 µm HFET Nominal Pout of 37dBm at 6 GHz Nominal Gain of 9.5dB at 6 GHz Nominal PAE of 52% at 6 GHz Frequency Range: DC - 10.5 GHz

TGA2517

Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
Contextual Info: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint

TGF4250

Abstract: r02107 TGF4260 TGF4230 TGF4240 Design Seminar Signal Transmission ab 7614 Au Sn eutectic R0210
Contextual Info: APPLICATION NOTES: INTRODUCTION Designing High Efficiency Applifiers using HFETs HFET TriQuint Semiconductor has developed a range of Heterostructure FETs designed for power amplifier applications where high power-added efficiency is a key specification. They also offer the

TGA2519-SG

Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
Contextual Info: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m

TGA2517

Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
Contextual Info: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4

531 amplifier

Abstract: 14 Ghz microwave transceiver power amplifier s band ghz mhz 10 ghz gain block
Contextual Info: Component Selection Guide RF Wireless Communications Products Part Description TQ9114 TQ9121 TQ9122 TQ9132 30 – 500 MHz IF/AGC Amplifier 1.2 – 1.6 GHz Low-Noise Amplifier 500 – 2500 MHz Low-Noise Amplifier 800 – 2500 MHz 50-mW Driver Amplifier Gain dB

TG2H214220-FL

Abstract: TGA2572 TGA2573 lte transceiver TGA2540-FL TQM963014 TGA2517 TQM6M9069 TQP6M9002 TQM7M5013
Contextual Info: Product Selection Guide Choose TriQuint’s Innovative RF Solutions Connecting the Digital World to the Global Network Welcome to Our Product Selection Guide Table of Contents About TriQuint Semiconductor.3 Guide by Market Automotive. 4

Contextual Info: Microwave/Millimeter-Wave Products TGF4250-EEU Preliminary 4.8 mm Discrete HFET The TriQuint TGF4250-EEU is a 4.8 mm discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 10.5 GHz in Class A and

ka band lna

Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
Contextual Info: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: info-mmw@tqs.com Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for

TGA2517

Abstract: TGA2540-FL TGA2573 TQM7M5013 TQP6M9002 tga2540 tqp340003 TQM726018 QFN28 6x6 TQM679002A
Contextual Info: May 2010 Product Selection Guide Amplifiers Control Products Filters Integrated Products Optical Components Connecting the Digital World to the Global Network Table of Contents ABOUT TRIQUINT SEMICONDUCTOR .2 GUIDE BY MARKET Automotive . 4