KA BAND LIMITER Search Results

VDA1002B

Abstract: Receiver Protectors tr limiter ka band Limiter band Limiter ka band TR Limiter Limiter WR28 WR-28
Contextual Info: Receiver Protectors VDA1002B Ka-Band TR Limiter Description: Ka-Band TR Limiter. Features: • · · · · · · · · · · · Frequency: 34.55 to 35.25 GHz Power: 10 kW peak Pulsewidth: 0.16 mSec max Duty Cycle: .002 max Insertion Loss: 1.6 dB max VSWR: 1.4:1 max

WR284* ISOLATOR

Abstract: MS3116E-10-6S WR340 flange dimensions
Contextual Info: Back to Amplifier Home Page AMF SATCOM AMPLIFIERS Introduction S-Band C-Band X-Band Ku-Band Ka-Band 40 – 60 GHz Low Noise Outline Drawings 100 Davids Drive • Hauppauge, NY 11788 • 631-436-7400 • Fax: 631-436-7430 • www.miteq.com TABLE OF CONTENTS

Contextual Info: TGL2203 Ka-Band 1 W VPIN Limiter Applications • Receive Chain Protection  Commercial and Military Radar Product Features          Functional Block Diagram Frequency Range: 30 - 38 GHz Insertion Loss: < 1 dB Peak Power Handling: 1 W

1N23 diode

Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
Contextual Info: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure

TGA2519-SG

Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
Contextual Info: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m

ka band lna

Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
Contextual Info: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: info-mmw@tqs.com Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for

DMJ3086

Abstract: DMJ4317 DME4750-000 DMF3068-000 mip 290 dmf5818 DMF6554-000 DME3040-000 DMJ3181-000 DMF3291-000
Contextual Info: ALPHA IN»/ S E M I C O N D U C T O R 33E D • Q S 6 S H M B 0 0 0 0 7 5 4 7 ■ ALP Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes : ^ L Features \ ■ Ideal for MIC Low 1/f Noise Low Intermodi Intermodulation Distortion Low Turn On Hermetically Sealed Packages

DMJ4747

Abstract: DMJ4708 DMJ3102-000 DMF-5845 DMJ3086 DMF6554-000 DMF2190-000 DMJ4317-000 dme3013-000
Contextual Info: Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes Features • ■ ' ±A Ideal for MIC Low 1/f Noise Low Intermodulation Distortion Low Turn On Hermetically Sealed Packages v v * uX ■ > * ' I < ^ p»iL VHM Description RF parameters, capacitance and breakdown voltage

DME3256-000

Abstract: DMF6554-000 DMB2855-000 DMJ3102-000 132-042 DMJ4317-000 DMJ3086-000 DMJ3086 DME3014-000 silicon di for microwave diode mixer
Contextual Info: Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes ALPHA IND/ S E M I C O N D U C T O R _ 4ÛE D • 0 S Ô S 4 4 3 0 0 0 1 1 Q S ¿145 ■ ALP ék . Features '^ k \ / T *07*07 ^ / ■ Ideal for MIC ■ Low 1/f Noise Low Intermodulation Distortion Low Turn On

AML3501

Abstract: k and ka band radar detector AMP-90 AMP3001 ADN16 KA band diode detector waveguide ADN3002 AMH3001
Contextual Info: 0258354 ADVANCED SEMICONDUCTOR 92D 0 0 1 0 6 D 7• '-¿ ? 7 -ö 7 ]>E|0ESa3SM OOOOlOt, 7 | SCHOTTKY BARRIER MIXER AND DETECTOR DIODES ASI’s Schottky Barrier Mixer and Detector Diodes are manufactured by the deposition of a suitable barrier metal on an epitaxial silicon layer to

5503 dm

Abstract: DMF6130B DMF-6130B dm 465 k and ka band radar detector P041 005801 DMC550 p029 DMF6130BM
Contextual Info: 0585443 ALPHA I , I . 03 - j T | DSSS4 43 □□OD3bc5 2 WT-> • | 3 -r T * -J ~ / ~ O / Silicon Bonded and Pressure Contact - Schottky Barrier Mixer Diodes ALPHA INI/ SEMICONDUCTOR Features • Bonded Junctions for Reliability • Low 1/f N o ise • Low Turn O n for Starved L.O. Applications

radar detector 10.5 ghz local oscillator

Abstract: Silicon Point Contact Mixer Diodes dmc5910
Contextual Info: Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes Features Bonded Junctions for Reliability Low 1/f Noise Low Turn On for Starved L.O. Applications Planar Passivated Dice for Reliability Uniform Characteristics Description Applications Alpha’s silicon Schottky barrier mixer diodes are de­

radar detector 10.5 ghz local oscillator

Abstract: DMC5501 DMF-6106 DMF4039 dmf6106 005801 DMF6130-013 Silicon Point Contact Mixer Diodes
Contextual Info: Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes ALPHA IND/ S E M I C O N D U C T O R 0 5 A S M M 3 Q D D l l M b 3bfl • ALP 43E D * Features T í á,í' ■ ■ ■ ■ ■ 07-07 Bonded Junctions for Reliability Low 1/f Noise Low Turn On for Starved L.O. Applications

Contextual Info: ALPHA I'ND/ SEMICONDUC TOR 33E D • 0S65H43 DDDD7S3 3 * A L P Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes -v-o-7-0-1 Features ■ ■ ■ ■ ■ Bonded Junctions for Reliability Low 1/f Noise Low Turn On for Starved L.O. Applications

DMG-6414A

Abstract: DMF3068 DMF4384 diodos led DMH6570 dmj4317 DMF3243 DMF5847 DMJ4708 dmf5818
Contextual Info: 0585443 ALPHA ALPHA ~Ü3 DSflSMM3'DGGG3Sl S | ~ D J‘ - Q ' 7 —0 1 Silicon Beam-Lead and Chip Schottky Barrier INC/ SEMICONDUCTOR Mixer Diodes \ n i - ' i - =:- V] Features :IT • Ideal for MIC • Low 1/f Noise • Low Intermodulation Distortion • Low Turn On

1N23 diode

Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
Contextual Info: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re­ ceiver to deteriorate no greater than 0.1 dB due to local

SEMP 690

Contextual Info: SPG-14 SATCOM PRODUCT GUIDE CONTENTS Attenuators. 3 Amplifiers. 4-5

x band diode detector waveguide

Abstract: CME7660-000 DIODE RL 207 8E08 detector doppler ka CDB7619-000 CDC7630-000 RF 207 Silicon Detector Diodes Alpha Industries
Contextual Info: Silicon Schottky Barrier Detector Diodes Features 3 Both P–Type and N–Type Low Barrier Silicon Available Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam–Lead and Chip Construction See Also Zero Bias Silicon Schottky Barrier Detector Diodes

A80-A350XSMD

Abstract: MODEM SHDSL epcos ferrite
Contextual Info: Ferrites and Accessories for xDSL Applications Product Profile 2002 http://www.epcos.com Contents Introduction 3 Optimized ferrite cores for xDSL applications 4 Clearance and creepage distances 7 Dimensions: cores and coil formers 8 Technical data and ordering codes

Silicon Point Contact Mixer Diodes

Abstract: ka-band mixer Silicon Detector Diodes Silicon Point Contact Diode
Contextual Info: ALPHA IN»/ SEMICONDUCTOR 4ÛE D • 05Û54M3 D0011S0 ÔTÏ ■ ALP Silicon Schottky Barrier Detector Diodes To-jol Features Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam-Lead and Chip Construction Description Applications Alpha packaged, beam-lead and chip Schottky

pulse metal detector

Abstract: x band diode detector waveguide diode detector x band Silicon Point Contact Mixer Diodes Schottky Barrier Diodes for detectors Silicon Detector Diodes Silicon Detector Silicon Point Contact Diode
Contextual Info: Silicon Schottky Barrier Detector Diodes Features • ■ ■ Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam-Lead and Chip Construction Description Applications Alpha packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications

DDB-4503

Abstract: KA band detector
Contextual Info: 0585443 ALPHA ~0Ì IND/ SEMICONDUCTOR 03E 00 37 3 T-07-0 7 D eT | 05A5443 0D0D373 4 Silicon Schottky Barrier Detector Diodes -u r- • f e : '/- .- /- •: > Features • Low 1/f Noise • Bonded Junctions for Reliability • Planar Passivated Beam-Lead and Chip Construction

CDB-7606

Abstract: CDB7606-000
Contextual Info: Silicon Schottky Barrier Detector Diodes S3 A lp h a CDB, DDB Series Features • Low 1/f Noise ■ Bonded Junctions for Reliability ■ Planar Passivated Construction Beam-Lead and Chip Description Alpha packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications

DDB3268-000

Abstract: DDB5098-000 DDB4517-006 kaba DDL6672 CDB7619-000
Contextual Info: Silicon Schottky Barrier Detector Diodes ESAlpha CDB, DDB Series Features • Low 1/f Noise ■ Bonded Junctions for Reliability ■ Planar Passivated Construction Beam-Lead and Chip Description Alpha packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications