CLY5 Search Results

Contextual Info: CLY5 Datasheet High-Power Packaged GaAs FET Description The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable

Contextual Info: CLY5 Datasheet High-Power Packaged GaAs FET Description The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable

MARKING 717

Abstract: sot-223 MARKING CODE 718 Power amplifier for mobile phones For sot223
Contextual Info: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable

09917

Contextual Info: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable

40337

Contextual Info: TQS - COMPANY PROPRIETARY INFORMATION SPEC TITLE: CLY5 DATASHEET SPEC. NO: DAT.CLY5 REV: D PAGE 1 OF 11 REVISION HISTORY REV A DATE 10-20-03 ECN# 23740 B 11-19-03 23972 C 12-15-05 30666 D 06-30-06 32716 DESCRIPTION OF CHANGE New release of CLY5 datasheet formerly DAT.056 rev C ; also

Contextual Info: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable

CLY5

Abstract: 93 69 MARKING CODE
Contextual Info: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable

04435

Abstract: CLY 70
Contextual Info: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable

CLY5

Abstract: MAX 8985 09069 ipc 9702 07293 13.3921
Contextual Info: CLY5 Datasheet High-Power Packaged GaAs FET Description The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable

Contextual Info: CLY5 Datasheet High-Power Packaged GaAs FET Description The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable

Contextual Info: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable

PO 9038

Abstract: gaas fet marking a MAX 8985 pin diagram of 7414 019 triquint d 5287 power FET transistor 2 gigahertz Gp 28 db transistor 5478 01380
Contextual Info: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable

siemens gaas fet

Abstract: gaas fet marking J
Contextual Info: SIEMENS CLY 5 GaAs FET D a t a s h e e t * Pow er amplifier for mobile phones * For frequencies from 400 M H z to 2.5 G H z * W ide operating voltage range: 2.7 to 6 V * at V 0=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % X 2 1 ESD: V P S0S163

Contextual Info: T1^ 5m m BILEVEL PCB LEDs CLEAR, INTERLOCKING ARRAYS part PART NUMBER EXAMPLES: 21PCT200 CWR6 -SI NO. I- r LENS, COLOR, BRIGHT. MODEL — T ALL LEDS SAME COLOR/LENS TYPE ~ LED COLOR 21PCT200CWR6-SI ELECTRO-OPTICAL CHARACTERISTICS Ta=25eC lr=10ff A(MAX)

sl1040

Abstract: SL1018
Contextual Info: FEATURES S100 D I R E C T L Y R E P L A C E S S T A ND A RD I N C A N D E C S E N T S LO NG LIFE , 1 0 0 , 0 0 0 H O U R S HIG H S H O C K / V IB R A T IO N R E S IS T A N C E S O L ID STATE B U I L T - I N R E S IS T O R FOR DIREC T 6 V TO 1 3 0 V A C / DC

uei 310

Abstract: bs27
Contextual Info: UEI> TëTil FLANGED & BAYONET EUROPEAN BASED LEDs FEATURES D IR E C T L Y R E P L A C E S STANDARD IN C A N D E C SE N T S • • • • • 10 YEAR / 1 0 0 , 0 0 0 HOURS SOLID STATE - HIGH S HO CK & VIBRATIO N RESISTANCE B U I L T - I N CURRENT LIMITING

BP 3126

Abstract: F3302 F3126
Contextual Info: DIRECTLY REPLACES STANDARD INCANDESCENTS LONG LIFE / 100,000 HOURS SOLID STATE, HIGH SHOCK/ VIBRATION RESISTANT BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLI­ CATIONS FOR 2V to 240VAC CHOICE OF 8 COLORS LOW CURRENT, POWER SAVINGS to 100 - 500% AND MORE

UEI 330

Abstract: resistor G202 FS206 fl206 FX206 TR6-A F-202
Contextual Info: TI-3/4 5mm MIDGET BASED LEDs UEI> MIDQET FLANGE, MIDQET GROOVE, MIDGET SCREW F I Ä ¥ U K 1 1 DIRECTLY REPLACES STANDARD INCANDESCENTS • 10 YEARS /1 0 0 ,0 0 0 HOURS • SOLID STATE - HIGH SHOCK & VIBRATION RESISTANCE • BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT AC OR DC

433MHZ amplifier 1w

Abstract: 433 mhz rf amplifier module 5w Smart RF04EB uhf linear amplifier module 5w ic sma 4038 ND 433 A TA31275EVKIT-433 smartrf04eb UGWW2USHN33A dkrn
Contextual Info: RF Wireless Evaluation Kit The Evaluation kits allow for a detailed evaluation of the Transceivers and Receiver. They enable testing of the device’s RF performance and require no additional support circuitry. The RF input uses a 50Ω matching network and an SMA connector for convenient connection to test

B3202

Abstract: B330 CG6* resistor
Contextual Info: [F H ÍA ¥ [Ri 01 g DIRECTLY REPLACES STANDARD INCANDESCENTS LONG LIFE / 100,000 HOURS SOLID STATE, HIGH SHOCK/ VIBRATION RESISTANT BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLI­ CATIONS FOR 2V to 240VAC CHOICE OF 8 COLORS LOW CURRENT, POWER SAVINGS

TGA2517

Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
Contextual Info: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint

TGA2517

Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
Contextual Info: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4

BF963

Abstract: BF544 BF930 BF987 triode sot23 gaasfets cLY2 BF965 CFY30 cly5
Contextual Info: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 MOS Field Effect Transistors M axim um Ratings Characteristics T.=25°C NF mW G ps dB dB 40 50 30 30 30 30 30 10 10 200 200 200 200 200 200 200 200 200 29 25

Contextual Info: L i c rJ f sP t1 au e ea i— E l p a r t T l9 i 5 m m BILEVEL PCB LEDs p CLEAR 21PCT200 CWR6 NO: i- PART NUMBER EXAMPLES: ALL LEDS SAME COLOR/LENS TYPE r ~ 21PCT200CWR6 E L E C T R O -O P T IC A L LENS, CO LO R, MODEL LE D C H A R A C T E R IS T IC S