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    TGA4506 Search Results

    TGA4506 Datasheets (6)

    TriQuint Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TGA4506
    TriQuint Semiconductor K Band Low Noise Amplifier Original PDF 123.96KB 9
    TGA4506
    TriQuint Semiconductor K Band LNA Original PDF 657.97KB 10
    TGA4506-EPU
    TriQuint Semiconductor 21-27 GHz Low Noise Amplifier Original PDF 93.81KB 8
    TGA4506-EPU
    TriQuint Semiconductor IC RF AMP CHIP SINGLE GP 27000MHZ 3.5V Original PDF 201.5KB 9
    TGA4506-SM
    TriQuint Semiconductor K Band Packaged Low Noise Amplifier Original PDF 116.62KB 10
    TGA4506-SM_EVB
    TriQuint Semiconductor K Band Packaged Low Noise Amplifier Original PDF 293.16KB 11

    TGA4506 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TGA1319A

    Abstract: TGA4506
    Contextual Info: Not Recommended for New Designs Product Data Sheet August 5, 2008 TriQuint Recommends the TGA4506 be used for New Designs Ka Band Low Noise Amplifier TGA1319A Key Features and Performance • • • • • • Chip Dimensions 1.984 mm x .923 mm 0.15um pHEMT Technology


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    tga4506tga1319a0007-inch PDF

    Contextual Info: Advance Product Information February 19, 2003 K Band Low Noise Amplifier TGA4506-EPU Key Features • • • • • • • Typical Frequency Range: 20 - 27 GHz 21 dB Nominal Gain 2.2 dB Nominal Noise Figure 12 dBm Nominal P1dB Bias 3.5 V, 60 mA 0.15 um 3MI pHEMT Technology


    Original
    tga4506-epu PDF

    Contextual Info: TGA4506-SM K Band Packaged Low Noise Amplifier Key Features • • • • • • 21-27 GHz Bandwidth 21 dB Nominal Gain 2.5 dB Nominal Noise Figure 10 dBm Nominal P1dB Bias: 3.5 V, 60 mA Package Dimensions: 4.0 x 4.0 x 1.1 mm 0.157 x 0.157 x 0.043 in


    Original
    tga4506-sm PDF

    tga 4506

    Abstract: TGA4506 RO4003 TGA4506-SM
    Contextual Info: Advance Product Information November 14, 2005 K Band Packaged Low Noise Amplifier TGA4506-SM Key Features • • • • • • 21-27 GHz Bandwidth 21 dB Nominal Gain 2.5 dB Nominal Noise Figure 10 dBm Nominal P1dB Bias: 3.5 V, 60 mA Package Dimensions:


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    tga4506-smtga 4506tga4506ro4003 PDF

    TGA4506

    Abstract: Q102 TGA4506-EPU
    Contextual Info: Advance Product Information December 20, 2001 21-27 GHz Low Noise Amplifier TGA4506-EPU Key Features • • • • • • 0.15 um pHEMT Technology 10 dBm Nominal Pout @ 24 GHz 20 dB Nominal Gain @ 22 GHz <2.0 dB Noise Figure @ 24 GHz 3.5V, 55 mA with -0.5V < Vg < +0.5V


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    tga4506-epu220mm823mm0007-inch+2tga4506q102 PDF

    TGA1319B

    Abstract: TGA4506
    Contextual Info: Not Recommended for New Designs Product Data Sheet August 5, 2008 TriQuint Recommends the TGA4506 be used for New Designs Ka Band Low Noise Amplifier TGA1319B Key Features and Performance • • • • • • 0.15um pHEMT Technology 21-27 GHz Frequency Range


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    tga4506tga1319b0007-inch PDF

    TGA4506

    Contextual Info: Advance Product Information July 19, 2005 K Band Low Noise Amplifier TGA4506 Key Features • • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 3.5 V, Id = 60 mA Gain & Return Loss dB 30 Gain 20 Typical Frequency Range: 20 - 27 GHz


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    tga4506 PDF

    Contextual Info: Advance Product Information March 28, 2005 K Band Packaged Low Noise Amplifier TGA4506-SM Key Features • • • • • • 21-27 GHz Bandwidth 21 dB Nominal Gain 2.5 dB Nominal Noise Figure 10 dBm Nominal P1dB Bias: 3.5 V, 60 mA Package Dimensions: 4.0 x 4.0 x 1.1 mm


    Original
    tga4506-sm PDF

    Contextual Info: Advance Product Information November 20, 2003 K Band Low Noise Amplifier TGA4506-EPU Key Features • • • • • • • Typical Frequency Range: 20 - 27 GHz 21 dB Nominal Gain 2.2 dB Nominal Noise Figure 12 dBm Nominal P1dB Bias 3.5 V, 60 mA 0.15 um 3MI pHEMT Technology


    Original
    tga4506-epu PDF

    TGA4506-EPU

    Contextual Info: Advance Product Information January 7, 2004 K Band Low Noise Amplifier TGA4506-EPU Key Features • • • • • • • Typical Frequency Range: 20 - 27 GHz 21 dB Nominal Gain 2.2 dB Nominal Noise Figure 12 dBm Nominal P1dB Bias 3.5 V, 60 mA 0.15 um 3MI pHEMT Technology


    Original
    tga4506-epu PDF

    TGA4506

    Abstract: 0031X
    Contextual Info: TGA4506 K Band Low Noise Amplifier Key Features • • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 3.5 V, Id = 60 mA Gain & Return Loss dB 30 Gain 20 Typical Frequency Range: 20 - 27 GHz 21 dB Nominal Gain 2.2 dB Nominal Noise Figure


    Original
    tga45060031x PDF

    Contextual Info: TGA4506-SM K Band Packaged Low Noise Amplifier Key Features • • • • • • 21-27 GHz Bandwidth 21 dB Nominal Gain 2.5 dB Nominal Noise Figure 10 dBm Nominal P1dB Bias: 3.5 V, 60 mA Package Dimensions: 4.0 x 4.0 x 1.1 mm 0.157 x 0.157 x 0.043 in


    Original
    tga4506-sm PDF

    Contextual Info: Advance Product Information K Band Packaged Low Noise Amplifier TGA4506-SM Key Features • • • • • • 21-27 GHz Bandwidth 21 dB Nominal Gain 2.5 dB Nominal Noise Figure 10 dBm Nominal P1dB Bias: 3.5 V, 60 mA Package Dimensions: 4.0 x 4.0 x 1.1 mm


    Original
    tga4506-sm PDF

    Contextual Info: Advance Product Information March 8, 2002 21-27 GHz Low Noise Amplifier TGA4506-EPU Key Features • • • • • • Primary Applications Gain dB Measured Fixtured Data 24 22 20 18 16 14 12 10 8 6 4 2 20 21 22 23 24 25 26 27 28 0.15 um pHEMT Technology


    Original
    tga4506-epu220mm823mm0007-inch PDF

    Contextual Info: TGA4506 K Band Low Noise Amplifier Key Features • • • • • • • Preliminary Measured Data Typical Frequency Range: 20 - 27 GHz 21 dB Nominal Gain 2.2 dB Nominal Noise Figure 12 dBm Nominal P1dB Bias 3.5 V, 60 mA 0.15 um 3MI pHEMT Technology Chip Dimensions 1.2 x 0.8 x 0.1 mm


    Original
    tga4506 PDF

    TGA4506

    Abstract: RO4003 TGA4506-SM
    Contextual Info: TGA4506-SM K Band Packaged Low Noise Amplifier Key Features • • • • • • 21-27 GHz Bandwidth 21 dB Nominal Gain 2.5 dB Nominal Noise Figure 10 dBm Nominal P1dB Bias: 3.5 V, 60 mA Package Dimensions: 4.0 x 4.0 x 1.1 mm 0.157 x 0.157 x 0.043 in


    Original
    tga4506-smtga4506ro4003 PDF

    TGA2517

    Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
    Contextual Info: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint


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    cus937tga2517tqp6m9002tqm653029+7tgs4304sg-o1-16tga2503tat7469tga9092-scc854651ah125 PDF

    TGA2519-SG

    Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
    Contextual Info: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m


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    asareavailableforkeybandsacrossdcto100ghzalldevicesare10011ghzcut-offfreqtgc1430f-epu+15tgc1430g-eputgc4401-eputriquintsemiconductor5/06s11/s22dc-20dc-18tga2519-sghpa kutgf4350-epuhpa41ic 7435ku vsat amplifiertga2512 pricetga8658tga2519 PDF

    TGA2517

    Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
    Contextual Info: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4


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    tga2517tqp6m9002tqm7m5013tga4943-sl+6cgb241tqm6m4003bt ag402tga4956-smtqm6m4048tga9092-scc PDF

    TG2H214220-FL

    Abstract: TGA2572 TGA2573 lte transceiver TGA2540-FL TQM963014 TGA2517 TQM6M9069 TQP6M9002 TQM7M5013
    Contextual Info: Product Selection Guide Choose TriQuint’s Innovative RF Solutions Connecting the Digital World to the Global Network Welcome to Our Product Selection Guide Table of Contents About TriQuint Semiconductor.3 Guide by Market Automotive. 4


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    tg2h214220-fltga2572tga2573lte transceiver+6tga2540-fltqm963014tga2517tqm6m9069tqp6m9002tqm7m5013 PDF

    ka band lna

    Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
    Contextual Info: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: info-mmw@tqs.com Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for


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    ka band lnatga4820-epuka band limiterhpa ku+6diode 142 19cka band lna, mixertgb2001-epuhpa-40ka band power fetka band space lna PDF

    TGA2517

    Abstract: TGA2540-FL TGA2573 TQM7M5013 TQP6M9002 tga2540 tqp340003 TQM726018 QFN28 6x6 TQM679002A
    Contextual Info: May 2010 Product Selection Guide Amplifiers Control Products Filters Integrated Products Optical Components Connecting the Digital World to the Global Network Table of Contents ABOUT TRIQUINT SEMICONDUCTOR .2 GUIDE BY MARKET Automotive . 4


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    tga2517tga2540-fltga2573tqm7m5013+6tqp6m9002tga2540tqp340003tqm726018qfn28 6x6tqm679002a PDF

    Mil-Std-883 Wire Bond Pull Method 2011

    Abstract: MIL-STD-883 Method 2010 pHEMT transistor RF MESFET S parameters MESFET 0.15 phemt p-hemt TGA8310 MIL-STD-883 method 2011 GaAs 0.15 pHEMT
    Contextual Info: GaAs MMIC Space Qualification GaAs MMIC Testing TriQuint Semiconductor has advanced Lot Acceptance Testing LAT for High Reliability Applications of GaAs MMICs. A flowchart depicting the entire MMIC processing flow, including the Quality Conformance Inspection


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    mil-std-883 wire bond pull method 2011mil-std-883 method 2010phemt transistorrf mesfet s parameters+6mesfet0.15 phemtp-hemttga8310mil-std-883 method 2011gaas 0.15 phemt PDF