TGA4506 Search Results

TGA4506 Datasheets (6)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
TGA4506	TriQuint Semiconductor	K Band Low Noise Amplifier	Original	PDF	123.96KB	9
TGA4506	TriQuint Semiconductor	K Band LNA	Original	PDF	657.97KB	10
TGA4506-EPU	TriQuint Semiconductor	21-27 GHz Low Noise Amplifier	Original	PDF	93.81KB	8
TGA4506-EPU	TriQuint Semiconductor	IC RF AMP CHIP SINGLE GP 27000MHZ 3.5V	Original	PDF	201.5KB	9
TGA4506-SM	TriQuint Semiconductor	K Band Packaged Low Noise Amplifier	Original	PDF	116.62KB	10
TGA4506-SM_EVB	TriQuint Semiconductor	K Band Packaged Low Noise Amplifier	Original	PDF	293.16KB	11

TGA4506 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TGA1319A Abstract: TGA4506 Contextual Info: Not Recommended for New Designs Product Data Sheet August 5, 2008 TriQuint Recommends the TGA4506 be used for New Designs Ka Band Low Noise Amplifier TGA1319A Key Features and Performance • • • • • • Chip Dimensions 1.984 mm x .923 mm 0.15um pHEMT Technology	Original	TGA4506 TGA1319A 0007-inch TGA1319A	PDF
Contextual Info: Advance Product Information February 19, 2003 K Band Low Noise Amplifier TGA4506-EPU Key Features • • • • • • • Typical Frequency Range: 20 - 27 GHz 21 dB Nominal Gain 2.2 dB Nominal Noise Figure 12 dBm Nominal P1dB Bias 3.5 V, 60 mA 0.15 um 3MI pHEMT Technology	Original	TGA4506-EPU	PDF
Contextual Info: TGA4506-SM K Band Packaged Low Noise Amplifier Key Features • • • • • • 21-27 GHz Bandwidth 21 dB Nominal Gain 2.5 dB Nominal Noise Figure 10 dBm Nominal P1dB Bias: 3.5 V, 60 mA Package Dimensions: 4.0 x 4.0 x 1.1 mm 0.157 x 0.157 x 0.043 in	Original	TGA4506-SM TGA4506-SM	PDF
tga 4506 Abstract: TGA4506 RO4003 TGA4506-SM Contextual Info: Advance Product Information November 14, 2005 K Band Packaged Low Noise Amplifier TGA4506-SM Key Features • • • • • • 21-27 GHz Bandwidth 21 dB Nominal Gain 2.5 dB Nominal Noise Figure 10 dBm Nominal P1dB Bias: 3.5 V, 60 mA Package Dimensions:	Original	TGA4506-SM TGA4506-SM tga 4506 TGA4506 RO4003	PDF
TGA4506 Abstract: Q102 TGA4506-EPU Contextual Info: Advance Product Information December 20, 2001 21-27 GHz Low Noise Amplifier TGA4506-EPU Key Features • • • • • • 0.15 um pHEMT Technology 10 dBm Nominal Pout @ 24 GHz 20 dB Nominal Gain @ 22 GHz <2.0 dB Noise Figure @ 24 GHz 3.5V, 55 mA with -0.5V < Vg < +0.5V	Original	TGA4506-EPU 220mm 823mm 0007-inch TGA4506 Q102 TGA4506-EPU	PDF
TGA1319B Abstract: TGA4506 Contextual Info: Not Recommended for New Designs Product Data Sheet August 5, 2008 TriQuint Recommends the TGA4506 be used for New Designs Ka Band Low Noise Amplifier TGA1319B Key Features and Performance • • • • • • 0.15um pHEMT Technology 21-27 GHz Frequency Range	Original	TGA4506 TGA1319B 0007-inch TGA1319B	PDF
TGA4506 Contextual Info: Advance Product Information July 19, 2005 K Band Low Noise Amplifier TGA4506 Key Features • • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 3.5 V, Id = 60 mA Gain & Return Loss dB 30 Gain 20 Typical Frequency Range: 20 - 27 GHz	Original	TGA4506 TGA4506	PDF
Contextual Info: Advance Product Information March 28, 2005 K Band Packaged Low Noise Amplifier TGA4506-SM Key Features • • • • • • 21-27 GHz Bandwidth 21 dB Nominal Gain 2.5 dB Nominal Noise Figure 10 dBm Nominal P1dB Bias: 3.5 V, 60 mA Package Dimensions: 4.0 x 4.0 x 1.1 mm	Original	TGA4506-SM TGA4506-SM	PDF
Contextual Info: Advance Product Information November 20, 2003 K Band Low Noise Amplifier TGA4506-EPU Key Features • • • • • • • Typical Frequency Range: 20 - 27 GHz 21 dB Nominal Gain 2.2 dB Nominal Noise Figure 12 dBm Nominal P1dB Bias 3.5 V, 60 mA 0.15 um 3MI pHEMT Technology	Original	TGA4506-EPU	PDF
TGA4506-EPU Contextual Info: Advance Product Information January 7, 2004 K Band Low Noise Amplifier TGA4506-EPU Key Features • • • • • • • Typical Frequency Range: 20 - 27 GHz 21 dB Nominal Gain 2.2 dB Nominal Noise Figure 12 dBm Nominal P1dB Bias 3.5 V, 60 mA 0.15 um 3MI pHEMT Technology	Original	TGA4506-EPU TGA4506-EPU	PDF
TGA4506 Abstract: 0031X Contextual Info: TGA4506 K Band Low Noise Amplifier Key Features • • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 3.5 V, Id = 60 mA Gain & Return Loss dB 30 Gain 20 Typical Frequency Range: 20 - 27 GHz 21 dB Nominal Gain 2.2 dB Nominal Noise Figure	Original	TGA4506 TGA4506 0031X	PDF
Contextual Info: TGA4506-SM K Band Packaged Low Noise Amplifier Key Features • • • • • • 21-27 GHz Bandwidth 21 dB Nominal Gain 2.5 dB Nominal Noise Figure 10 dBm Nominal P1dB Bias: 3.5 V, 60 mA Package Dimensions: 4.0 x 4.0 x 1.1 mm 0.157 x 0.157 x 0.043 in	Original	TGA4506-SM TGA4506-SM	PDF
Contextual Info: Advance Product Information K Band Packaged Low Noise Amplifier TGA4506-SM Key Features • • • • • • 21-27 GHz Bandwidth 21 dB Nominal Gain 2.5 dB Nominal Noise Figure 10 dBm Nominal P1dB Bias: 3.5 V, 60 mA Package Dimensions: 4.0 x 4.0 x 1.1 mm	Original	TGA4506-SM TGA4506-SM	PDF
Contextual Info: Advance Product Information March 8, 2002 21-27 GHz Low Noise Amplifier TGA4506-EPU Key Features • • • • • • Primary Applications Gain dB Measured Fixtured Data 24 22 20 18 16 14 12 10 8 6 4 2 20 21 22 23 24 25 26 27 28 0.15 um pHEMT Technology	Original	TGA4506-EPU 220mm 823mm 0007-inch	PDF

Contextual Info: TGA4506 K Band Low Noise Amplifier Key Features • • • • • • • Preliminary Measured Data Typical Frequency Range: 20 - 27 GHz 21 dB Nominal Gain 2.2 dB Nominal Noise Figure 12 dBm Nominal P1dB Bias 3.5 V, 60 mA 0.15 um 3MI pHEMT Technology Chip Dimensions 1.2 x 0.8 x 0.1 mm	Original	TGA4506	PDF
TGA4506 Abstract: RO4003 TGA4506-SM Contextual Info: TGA4506-SM K Band Packaged Low Noise Amplifier Key Features • • • • • • 21-27 GHz Bandwidth 21 dB Nominal Gain 2.5 dB Nominal Noise Figure 10 dBm Nominal P1dB Bias: 3.5 V, 60 mA Package Dimensions: 4.0 x 4.0 x 1.1 mm 0.157 x 0.157 x 0.043 in	Original	TGA4506-SM TGA4506-SM TGA4506 RO4003	PDF
TGA2517 Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125 Contextual Info: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint	Original	cus937 TGA2517 TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125	PDF
TGA2519-SG Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519 Contextual Info: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m	Original	AsareavailableforkeybandsacrossDCto100GHz Alldevicesare100% 11GHzCut-OffFreq TGC1430F-EPU TGC1430G-EPU TGC4401-EPU TriQuintSemiconductor5/06 S11/S22 DC-20 DC-18 TGA2519-SG HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519	PDF
TGA2517 Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC Contextual Info: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4	Original		PDF
TG2H214220-FL Abstract: TGA2572 TGA2573 lte transceiver TGA2540-FL TQM963014 TGA2517 TQM6M9069 TQP6M9002 TQM7M5013 Contextual Info: Product Selection Guide Choose TriQuint’s Innovative RF Solutions Connecting the Digital World to the Global Network Welcome to Our Product Selection Guide Table of Contents About TriQuint Semiconductor.3 Guide by Market Automotive. 4	Original		PDF
ka band lna Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna Contextual Info: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: info-mmw@tqs.com Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for	Original		PDF
TGA2517 Abstract: TGA2540-FL TGA2573 TQM7M5013 TQP6M9002 tga2540 tqp340003 TQM726018 QFN28 6x6 TQM679002A Contextual Info: May 2010 Product Selection Guide Amplifiers Control Products Filters Integrated Products Optical Components Connecting the Digital World to the Global Network Table of Contents ABOUT TRIQUINT SEMICONDUCTOR .2 GUIDE BY MARKET Automotive . 4	Original		PDF
Mil-Std-883 Wire Bond Pull Method 2011 Abstract: MIL-STD-883 Method 2010 pHEMT transistor RF MESFET S parameters MESFET 0.15 phemt p-hemt TGA8310 MIL-STD-883 method 2011 GaAs 0.15 pHEMT Contextual Info: GaAs MMIC Space Qualification GaAs MMIC Testing TriQuint Semiconductor has advanced Lot Acceptance Testing LAT for High Reliability Applications of GaAs MMICs. A flowchart depicting the entire MMIC processing flow, including the Quality Conformance Inspection	Original		PDF

TGA4506 Search Results

TGA4506 Datasheets (6)

TGA4506 Datasheets Context Search

TGA1319A

tga 4506

TGA4506

TGA1319B

TGA4506

TGA4506-EPU

TGA4506

TGA4506

TGA2517

TGA2519-SG

TGA2517

TG2H214220-FL

ka band lna

TGA2517

Mil-Std-883 Wire Bond Pull Method 2011