TGF1350 Search Results

TGF1350

Contextual Info: Texas Instruments TGF1350 Low-Noise Microwave GaAs FET Features • 1.5-dB noise figure with 11 -dB associated gain at 10 GHz ■ 2.2-dB noise figure with 7-dB associated gain at 18 GHz ■ All-gold metallization ■ Recessed 1/2-^m gate structure ■ Si3N4 channel passivation

Contextual Info: TGF1350SPC-X Transistors N-Channel UHF/Microwave MESFET V BR DSS (V)8.0 V(BR)GSS (V)-5.0 I(D) Max. (A)100m P(D) Max. (W)700m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)30m I(DSS) Max. (A)100m @V(DS) (V) (Test Condition) @Temp (øC) (Test Condition) g(fs) Min. (S) Trans. conduct.40m

TGF1350

Contextual Info: Product Data Sheet May 17, 2001 Discrete MESFET TGF1350-SCC Key Features and Performance • • • • • • 0.5 um x 300 um FET 1.5 dB Noise Figure with 11dB Associated Gain at 10 GHz 2.5 dB Noise Figure with 7 dB Associated Gain at 18 GHz All-gold Metallization for High Reliability

Contextual Info: TGF1350-SCC Discrete MESFET 0.5 \im x 300 iim FET 1.5-dB Noise Figure with 11-dB Associated Gain at 10-GHz 2.5-dB Noise Figure with 7-dB Associated Gain at 18-GHz All-gold Metallization for High Reliability Recessed Gate Structure PHOTO ENLARGEMENT DESCRIPTION

microwave fet

Contextual Info: TGF1350-SCC LOW-NOISE MICROWAVE FET AP PR O VAL 5079 0.5 |am x 300 |am FET 1.5-dB Noise Figure With 11-dB Associated Gain at 10 GHz 2.5-dB Noise Figure With 7-dB Associated Gain at 18 GHz Ail-Gold Metallization for High Reliability Recessed Gate Structure

TGF1350-SCC

Contextual Info: Product Data Sheet Discrete MESFET TGF1350-SCC Key Features and Performance • • • • • 0.5 um x 300 um FET 1.5 dB Noise Figure with 11dB Associated Gain at 10 GHz 2.5 dB Noise Figure with 7 dB Associated Gain at 18 GHz All-gold Metallization for High Reliability

TGF1350-SCC

Contextual Info: Product Data Sheet February 1, 2002 Discrete MESFET TGF1350-SCC Key Features and Performance • • • • • • 0.5 um x 300 um FET 1.5 dB Noise Figure with 11dB Associated Gain at 10 GHz 2.5 dB Noise Figure with 7 dB Associated Gain at 18 GHz All-Gold Metallization for High Reliability

Contextual Info: TGF1350XPM-X Transistors N-Channel UHF/Microwave MESFET V BR DSS (V)8.0 V(BR)GSS (V)-5.0 I(D) Max. (A)100m P(D) Max. (W)700m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)30m I(DSS) Max. (A)100m @V(DS) (V) (Test Condition) @Temp (øC) (Test Condition) g(fs) Min. (S) Trans. conduct.40m

Contextual Info: TGF1350SPM-X Transistors N-Channel UHF/Microwave MESFET V BR DSS (V)8.0 V(BR)GSS (V)-5.0 I(D) Max. (A)100m P(D) Max. (W)700m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)30m I(DSS) Max. (A)100m @V(DS) (V) (Test Condition) @Temp (øC) (Test Condition) g(fs) Min. (S) Trans. conduct.40m

Contextual Info: Discrete MESFET l"fl^ ET A M V V • ■ # 0.5 iim x 300 Mm FET £ 1.5-dB Noise Rgure with 11-dB Associated Gain at 10-GHz £ 2.5-dB Noise Rgure with 7-dB Associated Gain at 18-GHz Q All-gold Metallization for High Reliability Recessed Gate Structure DESCRIPTION

TGA2517

Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
Contextual Info: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint

TGA2519-SG

Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
Contextual Info: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m

TGA2517

Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
Contextual Info: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4

power amplifier 12 GHZ

Abstract: GHz Power FET TGA8021 A 8014 tga8300 618 FET TGS8250 x-band power amplifier SPDT FETs amplifier 1 2 ghz
Contextual Info: MMC GaAs Products Device Selection Guide AMPLIFIERS FREQ DEVICE DESCRIPTION TG A 8014 6-18 GHz power amplifier TG A 8035 6-18 GHz general-purpose NOMINAL NOISE MISCELLANEOUS GAIN FIGURE FEATURES RANGE 6 -18 GHz 8 dB POWER @ 1 dBc 27 dBm to 14 GHz 14% Power-added

TG2H214220-FL

Abstract: TGA2572 TGA2573 lte transceiver TGA2540-FL TQM963014 TGA2517 TQM6M9069 TQP6M9002 TQM7M5013
Contextual Info: Product Selection Guide Choose TriQuint’s Innovative RF Solutions Connecting the Digital World to the Global Network Welcome to Our Product Selection Guide Table of Contents About TriQuint Semiconductor.3 Guide by Market Automotive. 4

ka band lna

Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
Contextual Info: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: info-mmw@tqs.com Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for

TGA2517

Abstract: TGA2540-FL TGA2573 TQM7M5013 TQP6M9002 tga2540 tqp340003 TQM726018 QFN28 6x6 TQM679002A
Contextual Info: May 2010 Product Selection Guide Amplifiers Control Products Filters Integrated Products Optical Components Connecting the Digital World to the Global Network Table of Contents ABOUT TRIQUINT SEMICONDUCTOR .2 GUIDE BY MARKET Automotive . 4