MIXER Search Results

4328T

Contextual Info: TYPES 2N4223, 2N4224 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN NO. O LS 7311350, JU LY 1 9 7 0 -R E V IS E D M A R C H 1973 FOR V H F AM PLIFIER AND MIXER APPLICATIONS • Low Crgs . . . 2 pF Max • High lYfsl/C jss Ratio High-Frequency Figure-of-Merit

Contextual Info: h- .5 0 -H .2 5 0 r 1 .075 — .19 7 .0 5 5 I F □ □ □ .031 — r Î •lo .38 I HIGH DYNAMIC RANGE DOUBLE BALANCED MIXER h-— -19 MAX —- - T .3 5 1 TRAK MICROWAVE RF MIXER $ M X R /3 C F -0 2 H D SPECIFICATIONS: IF OPERATING FREQUENCY

2N5222

Abstract: A6T5222 A6T52
Contextual Info: TYPES 2N5222, A6T5222 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 2 9 , M A R C H 1973 S IL E C T t T R A N S IS T O R S t • For RF Am plifier, Mixer, and Video IF Applications in Radio and Television Receivers • Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil

Contextual Info: h- .5 0 - - .2 5 0 |.0 7 5 — .19 r t 1 t 1 RF□ 0 5 5 -1 r .031 — c ri T -lo .38 T - .35 1 I IF MATERIAL El STANDARD □ SPECIAL ° BASE o COVER ° MARKING » FINISH F R -4 VECTRA LASER SOLDER TIN HIGH DYNAMIC RANGE DOUBLE BALANCED MIXER MAX

1SS239

Contextual Info: SILICON EPITAXIAL SCHO TTKY BARRIER TY P E DIODE C A T V /U H F /V H F MIXER APPLICATIONS. M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Reverse Voltage Forward C urrent Junction Tem perature Storage Tem perature Range Vr Ip Tj Tstg RATING 6 30 125

SN76514

Abstract: L-442 L442 TL442
Contextual Info: LINEAR INTEGRATED CIRCUITS T Y P E S TL442 M , TL442C B A LA N C ED MIXERS B U L L E T I N N O . D U -S 1 1 4 3 0 , O C T O B E R 1 9 7 9 FORMERLY SN56514, SN76514 Flat Response to 100 MHz Local Oscillator IF Isolation . . . 30 dB Typ J O R N D U A L -IN -L IN E P A C K A G E

TRF1015

Contextual Info: TRF1015 CELLULAR RECEIVER FRONT-END ^ • • • • • • • • • - JUNE 1996 Low-Noise Amplifier LNA , Radio Frequency (RF) Mixer, and Voltage-Controlled Oscillator (VCO) High 1-dB Compression Mode

31RF

Contextual Info: HMJ5 High Dynamic Range FET Mixer Product Features Product Information Functional Diagram Product Description • +35 dBm IIP3 • No external matching element Required • RF 40 - 1000 MHz • LO 30 - 900 MHz • IF 5 - 250 MHz • +17 dBm LO Drive Level

Contextual Info: Advance Product Information June 29, 2004 20 - 40 GHz IQ Mixer TGC1430H-EPU Key Features and Performance • • • • • 0.25um pHEMT Technology 20 - 40 GHz RF/LO Frequencies DC - 1GHz IF -11 +/- 1dB Conversion Gain 15 dBm Input Drive Primary Applications

SFE10.52MJA10

Abstract: 8745H
Contextual Info: Philips Semiconductors Preliminary specification Satellite sound receiver with l2C-bus control TDA8745 FEATURES • On-chip frequency synthesizer and mixer: - tuning range 4 to 9.77 M Hz - reference oscillator 4 M H z using a crystal or 4 MHz frequency source

nec 2571

Abstract: nec 2571 4 pin 9522 transistor C 4804 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4185 UHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4185 is an NPN silicon epitaxial transistor intended for use as a UHF oscillator and a mixer in a tuner of a TV receiver. The device

RF POWER TRANSISTOR NPN

Abstract: 15 w RF POWER TRANSISTOR NPN RF TRANSISTOR 2SC3123 vhf high gain transistor ic 5ma transistor high gain low capacitance NPN transistor
Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3123 DESCRIPTION •High Conversion Gain Gce = 23dB TYP. ·Low Reverse Transfer Capacitance Cre = 0.4pF TYP. APPLICATIONS ·Designed for TV VHF mixer applications. ABSOLUTE MAXIMUM RATINGS Ta=25℃

SMS7621

Contextual Info: PRELIMINARY DATA SHEET SMS7621-092: 0201 Surface Mount Low Barrier Silicon Schottky Diode Anti-Parallel Pair Applications • Sub-harmonic mixer circuits • Frequency multiplication Features • Low barrier height • Suitable for use to 26 GHz or higher

Contextual Info: RF2492 Preliminary 8 DUAL-BAND LOW NOISE AMPLIFIER/MIXER Typical Applications • TDMA-GSM Cellular/PCS Handsets • CDMA Cellular/PCS Handsets • TDMA Cellular/PCS Handsets • GSM DCS/PCS Handsets • GAIT Handsets Product Description 1.00 0.85 Optimum Technology Matching Applied

SG2 SOT23

Abstract: XH8 mixer marking SH8 SMS7621-074LF
Contextual Info: DATA SHEET Surface Mount Mixer and Detector Schottky Diodes Applications • Sensitive RF and microwave detector circuits • Sampling and mixer circuits • High-volume wireless • WiFi and mobile • Low-noise receivers in high-sensitivity ID tags • Radio designs

Voltage-Controlled-Attenuator

Abstract: OPA221 JEDEC J-STD-020d 842 FET ch8c *vp1208 AFE5807 AFE5808AZCF
Contextual Info: AFE5808A www.ti.com SLOS729B – OCTOBER 2011 – REVISED APRIL 2012 Fully Integrated, 8-Channel Ultrasound Analog Front End with Passive CW Mixer, 0.75 nV/rtHz, 14/12-Bit, 65 MSPS, 158 mW/CH Check for Samples: AFE5808A FEATURES APPLICATIONS • • • 1

CB518

Contextual Info: Engineering Development Model Frequency Mixer ALY-ED5505/2 Level 10 LO Power +10 dBm Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a

Contextual Info: Ceramic Frequency Mixer WIDE BAND MCA1-12G+ Level 7 LO Power+7 dBm 3800 to 12000 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 50 mW IF Current 40 mA • wide bandwidth, 3800 to 12000 MHz

Contextual Info: Surface Mount SYM-30DLHW+ SYM-30DLHW Frequency Mixer Level 10 LO Power +10dBm 5 to 3000 MHz Features • • • • wideband, 5 to 3000 MHz good L-R isolation, 36 dB typ. excellent L-I isolation, 45 dB typ. low conversion loss, 6.5 dB typ. CASE STYLE: TTT167

Contextual Info: Engineering Development Model Level 17 LO Power +17 dBm Frequency Mixer HJK-ED11353/1 Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a

Contextual Info: Plug-In Frequency Mixer Level 10 LO Power +10 dBm Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 50mW IF Current 40mA SRA-220+ 0.05 to 2000 MHz Features • wideband, 0.05 to 2000 MHz • low conversion loss, 5.59 dB typ.

Contextual Info: Surface Mount HJK-9H+ HJK-9H Frequency Mixer Level 17 LO Power +17 dBm 818 to 853 MHz Maximum Ratings Operating Temperature Features -20°C to 85°C Storage Temperature • high IP3, 33 dBm typ. • compression, 3 dB higher than LO power -55°C to 100°C

Contextual Info: Surface Mount ADE-20+ ADE-20 Frequency Mixer Level 7 LO Power +7 dBm 1500 to 2000 MHz Features Maximum Ratings Operating Temperature Storage Temperature -55°C to 100°C RF Power 50mW IF Current 40mA Pin Connections LO 6 RF 4 IF + RoHS compliant in accordance

Contextual Info: Engineering Development Model Frequency Mixer HJK-ED9346/1 Level 17 LO Power +17 dBm Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a