TGA2519-SG
Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
Text: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m
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AsareavailableforkeybandsacrossDCto100GHz
Alldevicesare100%
11GHzCut-OffFreq
TGC1430F-EPU
TGC1430G-EPU
TGC4401-EPU
TriQuintSemiconductor5/06
S11/S22
DC-20
DC-18
TGA2519-SG
HPA Ku
TGF4350-EPU
HPA41
ic 7435
TGC4401-EPU
ku vsat amplifier
TGA2512 price
tga8658
TGA2519
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ka band lna
Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
Text: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: info-mmw@tqs.com Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for
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MGF4937
Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed
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H-CX587-R
KI-1311
MGF4937
MGFG5H1503
MGF4937AM
GD-32
MGFG5H1502
MGF0904
mgfc39v5964
MGF2430
MGF0909A
BA012J1
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Untitled
Abstract: No abstract text available
Text: Advance Product Information February 18, 2004 7 W Ka Band Packaged Power Amplifier TGA4915-EPU-CP Key Features and Performance • • • • • • • Frequency Range: 28 - 31 GHz 38 dBm Typical Psat @ Pin =21 dBm 22 dB Nominal Gain 15 dB Typical Return Loss
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TGA4915-EPU-CP
TGA4915-EPU-CP
TGA4915
DM6030HK
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TGA4915-EPU-CP
Abstract: ka band power mmic
Text: Advance Product Information June 30, 2004 7 W Ka Band Packaged Power Amplifier TGA4915-EPU-CP Key Features and Performance • • • • • • • Frequency Range: 26 - 31 GHz 38 dBm Typical Psat @ Pin =21 dBm 22 dB Nominal Gain 15 dB Typical Return Loss
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TGA4915-EPU-CP
TGA4915-EPU-CP
ka band power mmic
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Untitled
Abstract: No abstract text available
Text: TGA4510-SM Ka Band Compact Driver Amplifier Key Features • • • • • • Typical Frequency Range: 29-31 GHz 17 dBm Nominal Psat 15 dB Nominal Gain Bias Conditions: Vd = 6V, Id = 60 mA Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 0.9 mm
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TGA4510-SM
TGA4510-SM
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Untitled
Abstract: No abstract text available
Text: TGA4510-SM Ka Band Compact Driver Amplifier Key Features • • • • • • Typical Frequency Range: 29-31 GHz 17 dBm Nominal Psat 15 dB Nominal Gain Bias Conditions: Vd = 6V, Id = 60 mA Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 0.9 mm
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TGA4510-SM
TGA4510-SM
25-um
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Untitled
Abstract: No abstract text available
Text: TGA4510-SM Ka Band Compact Driver Amplifier Key Features • • • • • • Typical Frequency Range: 29-31 GHz 17 dBm Nominal Psat 15 dB Nominal Gain Bias Conditions: Vd = 6V, Id = 60 mA Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 0.9 mm
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TGA4510-SM
TGA4510-SM
25-um
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Untitled
Abstract: No abstract text available
Text: TGA4510-SM Ka Band Compact Driver Amplifier Key Features • • • • • • Typical Frequency Range: 29-31 GHz 17 dBm Nominal Psat 15 dB Nominal Gain Bias Conditions: Vd = 6V, Id = 60 mA Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 0.9 mm
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TGA4510-SM
TGA4510-SM
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RO4003
Abstract: 2931 5v
Text: TGA4510-SM Ka Band Compact Driver Amplifier Key Features • • • • • • Typical Frequency Range: 29-31 GHz 17 dBm Nominal Psat 15 dB Nominal Gain Bias Conditions: Vd = 6V, Id = 60 mA Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 0.9 mm
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TGA4510-SM
TGA4510-SM
RO4003
2931 5v
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DM6030HK
Abstract: TGA4905-CP 102 00024 0005 ka band gaas fet Package
Text: TGA4905-CP 4 Watt Ka Band Packaged Amplifier Key Features and Performance • • • • • 36 dBm VSAT band Psat 22 dB Nominal Gain 25 - 31 GHz Frequency Range 0.25µm pHEMT Technology Bias Conditions: 6 V, 2.1 A Quiescent up to 4 A under RF drive Package Dimensions:
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TGA4905-CP
TGA4905-CP
TGA4905
DM6030HK
102 00024 0005
ka band gaas fet Package
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Untitled
Abstract: No abstract text available
Text: TGA4905-CP 4 Watt Ka Band Packaged Amplifier Key Features and Performance • • • • • 36 dBm VSAT band Psat 22 dB Nominal Gain 25 - 31 GHz Frequency Range 0.25µm pHEMT Technology Bias Conditions: 6 V, 2.1 A Quiescent up to 4 A under RF drive Package Dimensions:
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TGA4905-CP
TGA4905-CP
TGA4905
DM6030HK
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VMMK-2303
Abstract: VMMK-2503 microwave propagation VMMK-2203 VMMK-2403 ka band gaas fet Package E-band mmic ka band lna VMMK-2103 VMMK-2x03
Text: GaAs-Based Surface Mount Wafer Scale Package MMICs for DC to 45 GHz Applications White Paper By: Henrik Morkner I. Introduction Packaging has always been the “Achilles Heal” of extracting the maximum microwave performance out of any IC technology. The inherent parasitic capacitance and inductance associated with bond wires, lead frames, and
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800MHz
AV02-2103EN
VMMK-2303
VMMK-2503
microwave propagation
VMMK-2203
VMMK-2403
ka band gaas fet Package
E-band mmic
ka band lna
VMMK-2103
VMMK-2x03
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x-band microwave fet
Abstract: x-band mmic lna MMIC X-band amplifier x-band limiter GAAS FET AMPLIFIER x-band 10w microwave transceiver X band 5-bit phase shifter MMIC s-band X-band GaAs pHEMT MMIC Chip x-band power transistor
Text: GaAs MMIC PROCESSES ENABLE MULTI-FUNCTION INTEGRATION, INCREASING RELIABILITY WHILE REDUCING CHIP SIZE AND COST By Dr. Edward L. Griffin and D. Gary Lerude Aerospace & Defense ICs M/A-COM, a Tyco Electronics Company Introduction After some 20+ years of DoD technology development, the commercial wireless market has
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x-band power transistor
Abstract: x-band microwave fet MMIC X-band amplifier x-band mmic lna GAAS FET AMPLIFIER x-band 10w microwave transceiver X-band GaAs pHEMT MMIC Chip X band 5-bit phase shifter x-band mmic x-band limiter
Text: MAY 2000 GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While Reducing Chip Size and Cost by Dr. Edward L. Griffin and D. Gary Lerude, Aerospace & Defense ICs, M/A-COM, a Tyco Electronics Company Introduction After more than 20 years of DoD technology development, the exploding
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ka band high power fet amplifier schematic
Abstract: DM6030HK TGA4905-CP ka band power mmic
Text: Advance Product Information February 7, 2006 4 Watt Ka Band Packaged Amplifier TGA4905-CP Key Features and Performance • • • • • • 36 dBm VSAT band Psat 22 dB Nominal Gain 25 - 31 GHz Frequency Range 0.25µm pHEMT Technology Bias Conditions: 6 V, 2.1 A Quiescent
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TGA4905-CP
TGA4905-CP
TGA4905
DM6030HK
ka band high power fet amplifier schematic
ka band power mmic
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TGA4901-EPU-CP
Abstract: No abstract text available
Text: Advance Product Information March 21, 2003 3 Watt Ka Band Packaged Amplifier TGA4901-EPU-CP Key Features and Performance • • • • • • • • Preliminary Measured Performance Bias Conditions: Vd=6V Idq=2.2A Primary Applications TGA4901 S-Parameters
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TGA4901-EPU-CP
TGA4901
18dBm
TGA4901-EPU-CP
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TGA4902-SM
Abstract: No abstract text available
Text: TGA4902-SM Ka Band Packaged MPA Key Features • • • • • Typical Frequency Range: 25 - 35 GHz 25 dBm Nominal P1dB 18 dB Nominal Gain Bias 6 V, 220 mA Package Dimensions: 4.0 x 4.0 x 0.9 mm Primary Applications • • • Ka-Band VSAT Point-to-Point Radio
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TGA4902-SM
TGA4902-SM
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Untitled
Abstract: No abstract text available
Text: TGA4902-SM Ka Band Packaged MPA Key Features • • • • • Typical Frequency Range: 25 - 35 GHz 25 dBm Nominal P1dB 18 dB Nominal Gain Bias 6 V, 220 mA Package Dimensions: 4.0 x 4.0 x 0.9 mm Primary Applications • • • Ka-Band VSAT Point-to-Point Radio
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TGA4902-SM
TGA4902-SM
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ka band gaas fet Package
Abstract: ka band power fet gaas fet micro-X Package GHZ micro-X Package power amplifier 4 ghz power amplifier power amplifier 5 ghz
Text: GaAs FETs and PHEMTs 3 9 Q. & Specifications Applications Package Part Number 21 dB Pi dB @ 18 GHz Medium Power Amplifier Chip Via AFM04P2-000 Low Noise/Medium Power MESFET 20 dB Pi dB @ 18 GHz Medium Power Amplifier Chip (Non-Via) AFM04P3-000 Low Noise/Medium
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AFM04P2-000
AFM04P3-000
AFM04P3-212
AFM04P3-213
AFM06P2-000
AFM06P2-212
AFM06P2-213
AFM06P3-212
AFM06P3-213
AFM08P2-000
ka band gaas fet Package
ka band power fet
gaas fet micro-X Package
GHZ micro-X Package
power amplifier 4 ghz
power amplifier
power amplifier 5 ghz
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2SK241 Equivalent FET
Abstract: 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent 2SK161 equivalent gaas fet vhf uhf
Text: Super-Mini FET SOT-23MOD, SOT-143MOD F5/F6 Electrical Characteristics (Ta=25“C) Mark Equivalent other package Type No. 1.2MIN J 2SK30ATM 15TYP X 2SK117 7TYP Y 2SK192A 1.0-10 9TYP K 2SK161 1.5-14 10TYP T 2SK241 0.6-6.5 1.5MIN KA 2SK373 Application V d s x V ooo
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OT-23MOD,
OT-143MOD)
2SK208
2SK209
2SK210
2SK211
2SK302
2SK368
2SK1062
2SK1771
2SK241 Equivalent FET
2SK117 equivalent
200 Amp mosfet
k 2545 MOSFET
3sk fet
2SK192A equivalent
2SK241 equivalent
tv ic equivalent
2SK161 equivalent
gaas fet vhf uhf
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MGF1601
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION OUTLINE DRAWING U n itm illim e te rs The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The
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MGF1601B
MGF1601B,
100mA
Pro54
MGF1601
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MGF4919
Abstract: MGF4919G
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG OUTLINE DRAWING series super-low-noise HEMT(High U n it:m illim e te rs Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The
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MGF491xG
MGF491xG
MGF491
12GHz
MGF4916G
MGF4919G
MGF4916G
MGF4919G
MGF4919
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Untitled
Abstract: No abstract text available
Text: NEC UPG107B UPG107P S-BAND SPDT MMIC SWITCH OUTLINE DIMENSIONS DESCRIPTION Units in mm OUTLINE BF08 UPG107B is an S-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for radar application. The device can operate from DC to 3.4 GHz. It Is housed in an
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UPG107B
UPG107P
UPG107B
UPG107B,
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