TA17 Search Results

1E14

Abstract: 2E12 FSS23A4D FSS23A4D1 FSS23A4D3 FSS23A4R FSS23A4R1
Contextual Info: FSS23A4D, FSS23A4R 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Formerly available as type TA17698. • 7A, 250V, rDS ON = 0.460Ω Description • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event

Contextual Info: TA1216AN T O SH IB A TO SH IBA BIPO LAR LINEAR INTEGRATED CIRCUIT SILICON M ONOLITHIC TA171RAN • mm u m m ■ v TV-AUDIO PROCESSOR IC TA1216AN incorporates the fo llo w in g : 3-channel left, right, w oofer signal processor circuit, I/ O ports for controlling m ultiplex sound dem odulator IC, I/ O ports for

TA17415

Abstract: IRF430 TB334
Contextual Info: IRF430 Data Sheet March 1999 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET • 4.5A, 500V Formerly developmental type TA17415. Ordering Information IRF430 • rDS ON = 1.500Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

Contextual Info: Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK SAW Filter 897.0MHz Part No: MP05871 Model: TA1701A Rev No: 1 A. MAXIMUM RATING: Electrostatic Sensitive Device ESD 1. Input Power Level: 10dBm

TA1731FN

Abstract: TA-1731
Contextual Info: TOSHIBA TENTATIVE TA1231F/FN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT TA1731F m m m • imp ■ ■ g SILICON MONOLITHIC TA1731FN m m m ■ w ■ ■ m 'm U H F /V H F TUNER IC The TA1231F and TA1231FN are TV tuner ICs which integrate on a single chip IF amp, a mixer/oscillator for

TA17415

Abstract: IRFF430 TB334
Contextual Info: IRFF430 Data Sheet March 1999 2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET • 2.75A, 500V Formerly developmental type TA17415. Ordering Information IRFF430 PACKAGE TO-205AF 1894.4 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

IRFF330

Abstract: TA17414 TB334
Contextual Info: IRFF330 Data Sheet March 1999 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET • 3.5A, 400V Formerly developmental type TA17414. Ordering Information IRFF330 PACKAGE TO-205AF 1893.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

IRFF9120

Contextual Info: IRFF9120 Data Sheet June 1999 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET • 4A, 100V • rDS ON = 0.60Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics Formerly developmental type TA17501.

IRF450

Abstract: TA17435 mosfet IRF450 TB334
Contextual Info: IRF450 Data Sheet March 1999 13A, 500V, 0.400 Ohm, N-Channel Power MOSFET • 13A, 500V Formerly developmental type TA17435. Ordering Information IRF450 PACKAGE TO-204AA 1827.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

IRFF420

Abstract: TB334 MOSFET 400V 16A
Contextual Info: IRFF420 Data Sheet March 1999 1.6A, 500V, 3.000 Ohm, N-Channel Power MOSFET • 1.6A, 500V Formerly developmental type TA17405. Ordering Information PACKAGE 1891.4 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

171MHz

Contextual Info: Golledge Electronics Ltd Ashwell Park, Ilminster Somerset, TA19 9DX, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com 171MHz SAW Filter for Pager Part No: MA04022 A. Model: TA171FD REV NO.: 2 MAXIMUM RATING: 1.Input Power Level: 0 dBm 2.DC voltage: 10 V

Contextual Info: Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK SAW Filter 942.50MHz Part No: MP05870 Model: TA1726A Rev No: 1 A. MAXIMUM RATING: Electrostatic Sensitive Device ESD 1. Input Power Level: 10dBm

irf150

Abstract: MOSFET IRF150 TA17421 TB334 circuits of IRF150 40A100V IRF-150
Contextual Info: IRF150 Data Sheet March 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET • 40A, 100V Formerly Developmental Type TA17421. Ordering Information PACKAGE 1824.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

Contextual Info: TOSHIBA TENTATIVE TA1231F/FN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA1731F TA1331FN mm m • v ■ ■ g mm mm v ■ ■ ■ w UHF/VHF TUNER IC The TA1231F and TA1231FN are TV tuner ICs which integrate on a single chip IF amp, a mixer/oscillator for

Contextual Info: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 171MHz Part No: MA03735 Model: TA171E1 Rev No:2 A. MAXIMUM RATING: 1. Input Power Level: 0dBm 2. DC voltage: 10V

datasheet for driver circuit for mosfet IRF240

Abstract: IRF240 TA17422 TB334
Contextual Info: IRF240 Data Sheet March 1999 18A, 200V, 0.180 Ohm, N-Channel Power MOSFET • 18A, 200V Formerly developmental type TA17422. Ordering Information PACKAGE 1584.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFETs designed,

IRFF210

Abstract: TB334
Contextual Info: IRFF210 Data Sheet March 1999 2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET • 2.2A, 200V Formerly developmental type TA17442. Ordering Information PACKAGE 1887.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

IRFF230

Abstract: TB334
Contextual Info: IRFF230 Data Sheet March 1999 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET • 5.5A, 200V Formerly developmental type TA17412. Ordering Information IRFF230 PACKAGE TO-205AF 1892.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

IRFF320

Abstract: TA17404 TB334
Contextual Info: IRFF320 Data Sheet March 1999 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET • 2.5A, 400V Formerly developmental type TA17404. Ordering Information PACKAGE 1890.4 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

MJE2955

Abstract: MJE2955 datasheet MJE2955 power amplifier circuit LT1020 dual 2N3904 NPN Transistor mje2955 data LT1020C LT1020CJ LT1020CN LT1020I
Contextual Info: LT1020 Micropower Regulator and Comparator U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ 40µA Supply Current 125mA Output Current 2.5V Reference Voltage Reference Output Sources 1mA and Sinks 0.5mA Dual Output Comparator Comparator Sinks 10mA

2E12

Abstract: FSTYC9055D FSTYC9055D1 FSTYC9055D3 FSTYC9055R Rad Hard in Fairchild for MOSFET
Contextual Info: FSTYC9055D, FSTYC9055R Data Sheet Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

2E12

Abstract: FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 Rad Hard in Fairchild for MOSFET
Contextual Info: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically

MC-901

Abstract: LS245s 9010 plx DP83916 LS245 AT9010
Contextual Info: AT 9010 Tm cTTn o l o a v * . . February 1993_ _ _ AT Bus Master Interface Chip for National DP83916 Ethernet Controller Features_ _ General Description_ _ • AT bus Bus Master Interface for National DP83916

TA138

Abstract: A1240XL 32 Bit loadable counter 2 bit magnitude comparator 176-CPGA "alu 4 bit" IC LM 384 gn
Contextual Info: Æ ic t â 1200XL Field Programmable Gate Arrays Features • Up to 8000 Gate Array Gates 20,000 PLD equivalent gates Datapath Performance at 135 MHz • Replaces up to 200 TTL Packages 10 ns Clock-Out speeds • Replaces up to eighty 20-Pin PAL Packages