IRFF420 Search Results

0,2uf 250V 6A

Contextual Info: IRFF420 Data Sheet Title FF4 bt 6A, 0V, 00 m, March 1999 1.6A, 500V, 3.000 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFF420R

Abstract: IRFF421R IRFF422R IRFF423R
Contextual Info: Rugged Power MOSFETs_ IRFF420R, IRFF421R, IRFF422R, IRFF423R File Num ber 2030 Avalanche Energy Rated N-Channel Power MOSFETs 1 .4 A a n d 1 .6 A , 4 5 0 V - 5 0 0 V ros on = 3.00 and 4.00 N-CHANNEL ENHANCEMENT MODE Feature«: • ■ ■

transistor f422

Abstract: f422 IRFF420 IRFF422 IRFF421 IRFF423 RFF422
Contextual Info: Standard Power MOSFETs - IRFF420, IRFF421, IRFF422, IRFF423 File Number N-Channel Enhancement-Mode Power Field-Effect Transistors 1.4A and 1.6A, 450V - 500V r DS on = 3.00 and 4.0fi N-CHANNEL ENHANCEMENT MODE Features: • m m m ■

IRFF

Contextual Info: tyvvys S IRFF420, IRFF421, IRFF422, IRFF423 S e m ico n d ucto r y y 1.4A and 1.6A, 450V to 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1,4A and 1,6A, 450V to 500V • High Input Impedance These are N-Channel enhancement mode silicon gate

Contextual Info: PD - 90429D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF420 JANTX2N6794 JANTXV2N6794 REF:MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number IRFF420 BVDSS 500V RDS(on) 3.0Ω ID 1.5A ® The HEXFET technology is the key to International

Contextual Info: h a f r r is IRFF420, IRFF421, IRFF422, IRFF423 1.4A and 1.6A, 450V to 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1 .4A and 1.6A, 450V to 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRFF420

Contextual Info: IRFF420 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . BVDSS ID(cont) RDS(on) 0 .8 9 m a x . (0 .0 3 5 )

IRFF420

Abstract: TB334 MOSFET 400V 16A
Contextual Info: IRFF420 Data Sheet March 1999 1.6A, 500V, 3.000 Ohm, N-Channel Power MOSFET • 1.6A, 500V Formerly developmental type TA17405. Ordering Information PACKAGE 1891.4 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

Contextual Info: IRFF420 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . BVDSS ID(cont) RDS(on) 0 .8 9 m a x . (0 .0 3 5 )

rectifier diode for max 250v 1.5A

Abstract: IRFF420 JANTX2N6794 JANTXV2N6794 rectifier 15A, 500V rectifier diode 250V 1.5A
Contextual Info: PD - 90429D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF420 JANTX2N6794 JANTXV2N6794 REF:MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number IRFF420 BVDSS 500V RDS(on) 3.0Ω ID 1.5A ® The HEXFET technology is the key to International

Contextual Info: • 4305271 0 D S m ? 5 JSHARRIS 344 ■ HAS IR FF420/421/422/423 IRFF420R/421R /422R /423R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO-205AF • 1.4A and 1.6A, 450V - 500V • rDS on = 3.0fl and 4.00 • Single Pulse Avalanche Energy Rated*

rectifier diode 250V 1.5A

Abstract: IRFF420 JANTX2N6794 JANTXV2N6794 rectifier diode for max 250v 1.5A
Contextual Info: PD - 90429C IRFF420 JANTX2N6794 JANTXV2N6794 REF:MIL-PRF-19500/555 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF420 BVDSS 500V RDS(on) 3.0Ω ID 1.5A  The HEXFET technology is the key to International

F421

Abstract: IRFF420R IRFF421R IRFF422R IRFF423R nanosecond pulse generator avalanche pulse generator
Contextual Info: Rugged Power MOSFETs_ IRFF420R, IRFF421R, IRFF422R, IRFF423R File Number 2030 Avalanche Energy Rated N-Channel Power MOSFETs 1.4 A a n d 1.6 A , 4 5 0 V -5 0 0 V ros on = 3.00 and 4.00 N-CHANNEL ENHANCEMENT MODE Feature«: • Single pulse avalanche energy rated

IRFF420

Abstract: TB334
Contextual Info: IRFF420 Data Sheet January 2002 1.6A, 500V, 3.000 Ohm, N-Channel Power MOSFET Features • 1.6A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: IRFF420, IRFF421, IRFF422, IRFF423 S E M I C O N D U C T O R 1.4A and 1.6A, 450V to 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1.4A and 1.6A, 450V to 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRFF420

Contextual Info: IRFF420 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . BVDSS ID(cont) RDS(on) 0 .8 9 m a x . (0 .0 3 5 )

TO-254

Abstract: T0-204 IRF450 equivalent
Contextual Info: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

Contextual Info: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Complementary MOSFETs buz11

Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

423R

Abstract: f423 IR 423
Contextual Info: 33 HARRIS IR F F420/421/422/423 IR FF420R/421 R /422R /423R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO-205AF • 1.4A and 1.6A, 450V - 500V • rDS on = 3.0(1 and 4.0fi • Singla Pulsa Avalancha Energy Rated* GATE SOURCE

1RF9130

Abstract: jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120
Contextual Info: Government/ Space Products bitematinnai ¡¡¡F te S ? H E X F E T , Mil-Qualified N-Channel Types JEDEC 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6796 2N6798 2N6800 2N6802 Part Numbers JANTX JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790

2N6802 JANTX

Contextual Info: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d es c rib e s 19 d ev ic e s , 12 N -C h a n n e l and 7 P -C h a n n e l, all c o n tain e d in the T 0 - 2 0 5 A F T O -3 9 p ac k a g e . This d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical