TA17698 Search Results

1E14

Abstract: 2E12 FSS23A4D FSS23A4D1 FSS23A4D3 FSS23A4R FSS23A4R1
Contextual Info: FSS23A4D, FSS23A4R 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Formerly available as type TA17698. • 7A, 250V, rDS ON = 0.460Ω Description • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FSS23A4D FSS23A4D1 FSS23A4D3 FSS23A4R FSS23A4R1 FSS23A4R3
Contextual Info: FSS23A4D, FSS23A4R 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 7A, 250V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

1E14

Abstract: 2E12 FSL23A4D FSL23A4D1 FSL23A4D3 FSL23A4R FSL23A4R1 FSL23A4R3
Contextual Info: FSL23A4D, FSL23A4R 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 5A, 250V, rDS ON = 0.480Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

1E14

Abstract: 2E12 FSL23A4D FSL23A4D1 FSL23A4D3 FSL23A4R FSL23A4R1 FSL23A4R3 Rad Hard in Fairchild for MOSFET
Contextual Info: FSL23A4D, FSL23A4R 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 5A, 250V, rDS ON = 0.480Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: FSL23A4D, FSL23A4R Semiconductor 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 250V, ros ON = 0-480S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSS23A4D, FSS23A4R S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs February 1998 Features Description • 7A, 250V, rDS ON = 0.460Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSL23A4D, FSL23A4R 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 250V, rDS ON = 0.480SJ The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for com mercial and m ilitary space

1E14

Abstract: 2E12 FSS23A4D FSS23A4D1 FSS23A4D3 FSS23A4R FSS23A4R1 FSS23A4R3
Contextual Info: FSS23A4D, FSS23A4R 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 7A, 250V, rDS ON = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Rad Hard in Fairchild for MOSFET

Contextual Info: FSL23A4D, FSL23A4R 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 5A, 250V, rDS ON = 0.480Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

Contextual Info: S E M I C O N D U C T O R FSL23A4D, FSL23A4R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs February 1998 Features Description • 5A, 250V, rDS ON = 0.480Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSS23A4D, FSS23A4R 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 7A, 250V, ros ON = 0-460S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: h a f r r is FSS23A4D, FSS23A4R S E M I C O N D U C T O R Radiation Hardened, SEG R Resistant N-Channel Power MOSFETs February 1998 Features • Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: SI! H a r r is S E M I C O N D U C T O R FSL23A4D, FSL23A4R U W U 1 * Description Features The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Contextual Info: SSÌ h a r fr is U S E M I C O N D U C T O R 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 7A, 250V, rDS ON = 0.460U The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs