TA17501 Search Results

IRFF9120

Contextual Info: IRFF9120 Data Sheet June 1999 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET • 4A, 100V • rDS ON = 0.60Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics Formerly developmental type TA17501.

Contextual Info: IRFD9120 Semiconductor April 1999 Data Sheet -1.0A, -100V, 0.6 Ohm, P-Channel Power MOSFET • -1.0A ,-100V • r DS ON = ° - 6 i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

IF9120

Abstract: IRFR9120 IRFR91209A IRFU9120 kp158 623E3 4411E
Contextual Info: IRFU9120, IRFR9120 S E M I C O N D U C T O R 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Package • 5.6A, 100V JEDEC TO-251AA SOURCE DRAIN GATE • rDS ON = 0.600Ω • Temperature Compensating PSPICE Model

IF9120

Abstract: TA17501 IRFR9120 IRFR91209A IRFU9120 TB334
Contextual Info: IRFR9120, IRFU9120 Data Sheet 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are P-Channel enhancement mode silicon gate power field

MOSFET IRFd9120

Abstract: IRFD9120 IRFD9120 mosfet
Contextual Info: IRFD9120 Data Sheet July 1999 1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET 2285.3 Features • 1.0A, 100V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are

IF9120

Abstract: IRFR9120 irfu9120 IRFR91209A TB334 4411E
Contextual Info: IRFR9120, IRFU9120 Data Sheet 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs January 2002 Features • 5.6A, 100V These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are

IRFD9120

Abstract: MOSFET IRFd9120
Contextual Info: IRFD9120 Data Sheet January 2002 1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET Features • 1.0A, 100V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are

Contextual Info: IRFF9120 Data Sheet Title FF9 0 bt A, 0V, m, an- June 1999 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers,

IRFD9120

Contextual Info: IRFD9120 Data Sheet Title FD 20 bt A, 0V, 1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET Features This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are

4411E

Abstract: IF9120
Contextual Info: IRFR9120, IRFU9120 Data Sheet 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs July 1999 3987.4 Features • 5.6A, 100V These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are

IF9120

Contextual Info: IRFR9120, IRFU9120 H A R R IS X Semiconductor 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs September 1998 Description Features 5.6 A, 100 V These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the ava­

Contextual Info: IRF9520 S e m iconductor April 1999 Data Sheet -6A, -100V, 0.600 Ohm, P-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are PChannel enhancement mode silicon gate power field effect

IRF9520

Contextual Info: IRF9520 Data Sheet Title F95 bt ,0V, 00 m, an- 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET Features This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

IRFR9120

Abstract: p-channel pspice model IF9120 TA17501 123E5
Contextual Info: IRFU9120, IRFR9120 & 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Package JEDEC T 0-25 1 A A • 5.6A, 100V SOURCE • r DS ON = 0.600Q • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve

IRFF9120

Contextual Info: IRFF9120 Data Sheet January 2002 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET Features • 4A, 100V This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers,

Contextual Info: IRFF9120 Semiconductor Data Sheet June 1999 4A, 100 V, 0.60 Ohm, P-Channel Power MOSFET • 4 A ,1 0 0 V • r DS ON = 0 .6 0 ß • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

irf9520

Abstract: IRF9520 equivalent
Contextual Info: IRF9520 Data Sheet January 2002 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET Features • 6A, 100V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are

if9120

Abstract: TA17501 IRFR9120 IRFR91209A IRFU9120 TB334 623E3 irfr9120 harris
Contextual Info: I R Semiconductor F I R R F 9 U 1 9 2 1 2 , 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 5.6A, 100V These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the ava­